CA1215476A - Schottky-barrier mos devices - Google Patents

Schottky-barrier mos devices

Info

Publication number
CA1215476A
CA1215476A CA000432757A CA432757A CA1215476A CA 1215476 A CA1215476 A CA 1215476A CA 000432757 A CA000432757 A CA 000432757A CA 432757 A CA432757 A CA 432757A CA 1215476 A CA1215476 A CA 1215476A
Authority
CA
Canada
Prior art keywords
region
channel
regions
contacts
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000432757A
Other languages
English (en)
French (fr)
Inventor
Conrad J. Koeneke
Martin P. Lepselter
William T. Lynch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1215476A publication Critical patent/CA1215476A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
CA000432757A 1982-07-23 1983-07-19 Schottky-barrier mos devices Expired CA1215476A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/401,142 US4485550A (en) 1982-07-23 1982-07-23 Fabrication of schottky-barrier MOS FETs
US401,142 1982-07-23

Publications (1)

Publication Number Publication Date
CA1215476A true CA1215476A (en) 1986-12-16

Family

ID=23586485

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000432757A Expired CA1215476A (en) 1982-07-23 1983-07-19 Schottky-barrier mos devices

Country Status (6)

Country Link
US (1) US4485550A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5932172A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1215476A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3326534A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2530867B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2124428B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JPH0697693B2 (ja) * 1984-12-05 1994-11-30 株式会社東芝 Ｍｏｓ型ｆｅｔのゲート構造の製造方法
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US4974046A (en) * 1986-07-02 1990-11-27 National Seimconductor Corporation Bipolar transistor with polysilicon stringer base contact
US4732865A (en) * 1986-10-03 1988-03-22 Tektronix, Inc. Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits
EP0331892B1 (de) * 1988-03-10 1992-04-01 Asea Brown Boveri Ag Mos-gesteuerter Thyristor (MCT)
JPH027571A (ja) * 1988-06-27 1990-01-11 Nissan Motor Co Ltd 半導体装置
US4920399A (en) * 1988-09-12 1990-04-24 Linear Integrated Systems, Inc. Conductance-modulated integrated transistor structure
US5338698A (en) * 1992-12-18 1994-08-16 International Business Machines Corporation Method of fabricating an ultra-short channel field effect transistor
US5760449A (en) * 1994-05-31 1998-06-02 Welch; James D. Regenerative switching CMOS system
US6624493B1 (en) 1994-05-31 2003-09-23 James D. Welch Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
US6268636B1 (en) 1994-05-31 2001-07-31 James D. Welch Operation and biasing for single device equivalent to CMOS
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US20040004262A1 (en) * 1994-05-31 2004-01-08 Welch James D. Semiconductor devices in compensated semiconductor
US6091128A (en) * 1994-05-31 2000-07-18 Welch; James D. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use
JP3093620B2 (ja) * 1995-10-19 2000-10-03 日本電気株式会社 半導体装置の製造方法
US5889331A (en) * 1996-12-31 1999-03-30 Intel Corporation Silicide for achieving low sheet resistance on poly-Si and low Si consumption in source/drain
US6683362B1 (en) 1999-08-24 2004-01-27 Kenneth K. O Metal-semiconductor diode clamped complementary field effect transistor integrated circuits
US20030235936A1 (en) * 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
US6544888B2 (en) * 2001-06-28 2003-04-08 Promos Technologies, Inc. Advanced contact integration scheme for deep-sub-150 nm devices
JP2004538650A (ja) * 2001-08-10 2004-12-24 スピネカ セミコンダクター， インコーポレイテッド 基板とのショットキーコンタクトを形成する高誘電率ゲート絶縁層、ソースおよびドレインを有するトランジスタ
US20060079059A1 (en) * 2001-08-10 2006-04-13 Snyder John P Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
US6974737B2 (en) * 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method
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US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
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JP3910971B2 (ja) 2004-03-26 2007-04-25 株式会社東芝 電界効果トランジスタ
US20070001223A1 (en) * 2005-07-01 2007-01-04 Boyd Diane C Ultrathin-body schottky contact MOSFET
US7250666B2 (en) 2005-11-15 2007-07-31 International Business Machines Corporation Schottky barrier diode and method of forming a Schottky barrier diode
US7709924B2 (en) * 2007-07-16 2010-05-04 International Business Machines Corporation Semiconductor diode structures
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WO2009131051A1 (ja) * 2008-04-21 2009-10-29 日本電気株式会社 半導体装置及びその製造方法
US9601630B2 (en) * 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
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Also Published As

Publication number Publication date
US4485550A (en) 1984-12-04
JPS5932172A (ja) 1984-02-21
DE3326534C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-04
DE3326534A1 (de) 1984-01-26
GB2124428A (en) 1984-02-15
GB2124428B (en) 1986-03-05
FR2530867B1 (fr) 1988-12-09
GB8319569D0 (en) 1983-08-24
FR2530867A1 (fr) 1984-01-27

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