CA1214381A - Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde - Google Patents
Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxydeInfo
- Publication number
- CA1214381A CA1214381A CA000432839A CA432839A CA1214381A CA 1214381 A CA1214381 A CA 1214381A CA 000432839 A CA000432839 A CA 000432839A CA 432839 A CA432839 A CA 432839A CA 1214381 A CA1214381 A CA 1214381A
- Authority
- CA
- Canada
- Prior art keywords
- gaas
- range
- resistivity
- wafers
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000432839A CA1214381A (fr) | 1983-07-20 | 1983-07-20 | Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde |
GB08418095A GB2143745B (en) | 1983-07-20 | 1984-07-16 | Growing semi conductor crystals |
DE19843426250 DE3426250A1 (de) | 1983-07-20 | 1984-07-17 | Verfahren zur herstellung von halbisolierendem einkristall-gaas |
JP59148690A JPS6071600A (ja) | 1983-07-20 | 1984-07-19 | 酸化ホウ素封入剤を用いるガリウムヒ素結晶の成長方法 |
FR8411593A FR2549500A1 (fr) | 1983-07-20 | 1984-07-20 | Procede de preparation de monocristaux semi-isolants de gaas |
HK183/88A HK18388A (en) | 1983-07-20 | 1988-03-10 | Method of growing gallium arsenide crystals using boron oxide encapsulant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000432839A CA1214381A (fr) | 1983-07-20 | 1983-07-20 | Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1214381A true CA1214381A (fr) | 1986-11-25 |
Family
ID=4125719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000432839A Expired CA1214381A (fr) | 1983-07-20 | 1983-07-20 | Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS6071600A (fr) |
CA (1) | CA1214381A (fr) |
DE (1) | DE3426250A1 (fr) |
FR (1) | FR2549500A1 (fr) |
GB (1) | GB2143745B (fr) |
HK (1) | HK18388A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61178497A (ja) * | 1985-02-04 | 1986-08-11 | Mitsubishi Monsanto Chem Co | 低転位密度ひ化ガリウム単結晶の成長方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551116A (en) * | 1968-06-04 | 1970-12-29 | Ibm | Process for preparing low resistivity high purity gallium arsenide |
JPS5815095A (ja) * | 1981-07-16 | 1983-01-28 | Toshiba Corp | 単結晶の製造方法 |
JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | CaAs単結晶への硼素のド−ピング方法 |
JPS58181799A (ja) * | 1982-04-16 | 1983-10-24 | Nippon Telegr & Teleph Corp <Ntt> | 硼素を添加したGaAs単結晶の製造方法 |
-
1983
- 1983-07-20 CA CA000432839A patent/CA1214381A/fr not_active Expired
-
1984
- 1984-07-16 GB GB08418095A patent/GB2143745B/en not_active Expired
- 1984-07-17 DE DE19843426250 patent/DE3426250A1/de not_active Ceased
- 1984-07-19 JP JP59148690A patent/JPS6071600A/ja active Pending
- 1984-07-20 FR FR8411593A patent/FR2549500A1/fr not_active Withdrawn
-
1988
- 1988-03-10 HK HK183/88A patent/HK18388A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB8418095D0 (en) | 1984-08-22 |
HK18388A (en) | 1988-03-18 |
FR2549500A1 (fr) | 1985-01-25 |
GB2143745A (en) | 1985-02-20 |
JPS6071600A (ja) | 1985-04-23 |
DE3426250A1 (de) | 1985-01-31 |
GB2143745B (en) | 1987-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ta et al. | Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs | |
DE60205369T2 (de) | Halbisolierendes siliciumcarbid ohne vanadiumdominanz | |
US5030315A (en) | Methods of manufacturing compound semiconductor crystals and apparatus for the same | |
Trumbore et al. | Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium Phosphide | |
Ballman et al. | Double doped low etch pit density InP with reduced optical absorption | |
JP2967780B1 (ja) | GaAs単結晶基板およびそれを用いたエピタキシャルウェハ | |
DE3514294A1 (de) | Mit indium dotierte halbisolierende galliumarsenideinkristalle und verfahren zu ihrer herstellung | |
US4585511A (en) | Method of growing gallium arsenide crystals using boron oxide encapsulant | |
Cockayne et al. | The growth and perfection of single crystal indium phosphide produced by the LEC technique | |
CA1214381A (fr) | Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde | |
Inada et al. | Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs | |
US4483735A (en) | Manufacturing process of semi-insulating gallium arsenide single crystal | |
GB2136706A (en) | Liquid encapsulated crystal growth | |
JPH0234597A (ja) | 水平ブリッジマン法によるGaAs単結晶の成長方法 | |
EP0334684B1 (fr) | Procédé de traitement de recuit pour monocristaux d'arséniure de gallium | |
JPH11268998A (ja) | GaAs単結晶インゴットおよびその製造方法ならびにそれを用いたGaAs単結晶ウエハ | |
Rogacheva et al. | Deviation from Stoichiometry and Properties of CuGaTe2. | |
JPH0543679B2 (fr) | ||
JPS62275099A (ja) | 半絶縁性リン化インジウム単結晶 | |
JP2505222B2 (ja) | 半絶縁体GaAs基板の製造方法 | |
JP2736343B2 (ja) | 半絶縁性InP単結晶の製造方法 | |
JPH0269307A (ja) | リン化インジウムおよびその製造方法 | |
Thomas et al. | Large diameter, undoped semi-insulating GaAs for high mobility direct ion implanted FET technology | |
JP2750307B2 (ja) | InP単結晶の製造方法 | |
JP2593148B2 (ja) | 化合物半導体の単結晶の育成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |