HK18388A - Method of growing gallium arsenide crystals using boron oxide encapsulant - Google Patents

Method of growing gallium arsenide crystals using boron oxide encapsulant

Info

Publication number
HK18388A
HK18388A HK183/88A HK18388A HK18388A HK 18388 A HK18388 A HK 18388A HK 183/88 A HK183/88 A HK 183/88A HK 18388 A HK18388 A HK 18388A HK 18388 A HK18388 A HK 18388A
Authority
HK
Hong Kong
Prior art keywords
gallium arsenide
boron oxide
growing gallium
arsenide crystals
encapsulant
Prior art date
Application number
HK183/88A
Inventor
Roelof P Bult
Ted E Schroeder
James G Needham
Original Assignee
Cominco Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cominco Ltd filed Critical Cominco Ltd
Publication of HK18388A publication Critical patent/HK18388A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK183/88A 1983-07-20 1988-03-10 Method of growing gallium arsenide crystals using boron oxide encapsulant HK18388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000432839A CA1214381A (en) 1983-07-20 1983-07-20 Method of growing gallium arsenide crystals using boron oxide encapsulant

Publications (1)

Publication Number Publication Date
HK18388A true HK18388A (en) 1988-03-18

Family

ID=4125719

Family Applications (1)

Application Number Title Priority Date Filing Date
HK183/88A HK18388A (en) 1983-07-20 1988-03-10 Method of growing gallium arsenide crystals using boron oxide encapsulant

Country Status (6)

Country Link
JP (1) JPS6071600A (en)
CA (1) CA1214381A (en)
DE (1) DE3426250A1 (en)
FR (1) FR2549500A1 (en)
GB (1) GB2143745B (en)
HK (1) HK18388A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178497A (en) * 1985-02-04 1986-08-11 Mitsubishi Monsanto Chem Co Method for growing gallium arsenide single with low dislocation density

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551116A (en) * 1968-06-04 1970-12-29 Ibm Process for preparing low resistivity high purity gallium arsenide
JPS5815095A (en) * 1981-07-16 1983-01-28 Toshiba Corp Production of single crystal
JPS5914440B2 (en) * 1981-09-18 1984-04-04 住友電気工業株式会社 Method for doping boron into CaAs single crystal
JPS58181799A (en) * 1982-04-16 1983-10-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of gaas single crystal containing boron

Also Published As

Publication number Publication date
DE3426250A1 (en) 1985-01-31
FR2549500A1 (en) 1985-01-25
CA1214381A (en) 1986-11-25
GB2143745B (en) 1987-01-21
GB2143745A (en) 1985-02-20
GB8418095D0 (en) 1984-08-22
JPS6071600A (en) 1985-04-23

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