CA1165903A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
CA1165903A
CA1165903A CA000381363A CA381363A CA1165903A CA 1165903 A CA1165903 A CA 1165903A CA 000381363 A CA000381363 A CA 000381363A CA 381363 A CA381363 A CA 381363A CA 1165903 A CA1165903 A CA 1165903A
Authority
CA
Canada
Prior art keywords
layer
plasma
gas mixture
compound
vol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000381363A
Other languages
English (en)
French (fr)
Inventor
Franciscus H.M. Sanders
Jozef A.M. Sanders
Jan Dieleman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1165903A publication Critical patent/CA1165903A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Drying Of Semiconductors (AREA)
CA000381363A 1980-07-11 1981-07-08 Method of manufacturing a semiconductor device Expired CA1165903A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8004007 1980-07-11
NL8004007A NL8004007A (nl) 1980-07-11 1980-07-11 Werkwijze voor het vervaardigen van een halfgeleider- inrichting.

Publications (1)

Publication Number Publication Date
CA1165903A true CA1165903A (en) 1984-04-17

Family

ID=19835610

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000381363A Expired CA1165903A (en) 1980-07-11 1981-07-08 Method of manufacturing a semiconductor device

Country Status (8)

Country Link
US (1) US4381967A (enFirst)
JP (2) JPS5749236A (enFirst)
CA (1) CA1165903A (enFirst)
DE (1) DE3125136A1 (enFirst)
FR (1) FR2486715B1 (enFirst)
GB (1) GB2081160B (enFirst)
IE (1) IE52047B1 (enFirst)
NL (1) NL8004007A (enFirst)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004008A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4708770A (en) * 1986-06-19 1987-11-24 Lsi Logic Corporation Planarized process for forming vias in silicon wafers
JPS63244848A (ja) * 1987-03-31 1988-10-12 Toshiba Corp ドライエツチング方法
US4836886A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Binary chlorofluorocarbon chemistry for plasma etching
RU2141701C1 (ru) * 1997-05-22 1999-11-20 Институт проблем технологии микроэлектроники и особочистых материалов РАН Способ плазмохимического травления кремнийсодержащих материалов
DE19819428C1 (de) * 1998-04-30 1999-11-18 Daimler Chrysler Ag Anzündelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138850C (enFirst) *
JPS5122637A (en) * 1974-08-20 1976-02-23 Fujitsu Ltd Kinzokuhimakuno etsuchinguhoho
JPS5289540A (en) * 1976-01-21 1977-07-27 Mitsubishi Electric Corp Etching gaseous mixture
JPS6019139B2 (ja) * 1976-07-26 1985-05-14 三菱電機株式会社 エツチング方法およびプラズマエツチング用混合物ガス
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials

Also Published As

Publication number Publication date
DE3125136C2 (enFirst) 1990-06-07
GB2081160B (en) 1984-08-08
FR2486715B1 (fr) 1986-01-24
US4381967A (en) 1983-05-03
GB2081160A (en) 1982-02-17
JPS5749236A (en) 1982-03-23
FR2486715A1 (fr) 1982-01-15
DE3125136A1 (de) 1982-03-04
JPH02290020A (ja) 1990-11-29
JPH0237090B2 (enFirst) 1990-08-22
JPH0359574B2 (enFirst) 1991-09-11
IE811532L (en) 1982-01-11
IE52047B1 (en) 1987-05-27
NL8004007A (nl) 1982-02-01

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Legal Events

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