CA1163020A - High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading - Google Patents
High voltage semiconductor device having improvements to the dv/dt capability and plasma spreadingInfo
- Publication number
- CA1163020A CA1163020A CA000377573A CA377573A CA1163020A CA 1163020 A CA1163020 A CA 1163020A CA 000377573 A CA000377573 A CA 000377573A CA 377573 A CA377573 A CA 377573A CA 1163020 A CA1163020 A CA 1163020A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- cathode
- emitter
- high voltage
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000007480 spreading Effects 0.000 title abstract description 5
- 230000006872 improvement Effects 0.000 title description 4
- 238000001465 metallisation Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 8
- 230000001052 transient effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 235000007253 Trigonella corniculata Nutrition 0.000 description 1
- 240000004336 Trigonella corniculata Species 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15274280A | 1980-05-23 | 1980-05-23 | |
| US152,742 | 1980-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1163020A true CA1163020A (en) | 1984-02-28 |
Family
ID=22544224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000377573A Expired CA1163020A (en) | 1980-05-23 | 1981-05-14 | High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5710972A (enrdf_load_stackoverflow) |
| CA (1) | CA1163020A (enrdf_load_stackoverflow) |
| CH (1) | CH656485A5 (enrdf_load_stackoverflow) |
| DE (1) | DE3120254A1 (enrdf_load_stackoverflow) |
| SE (1) | SE457837B (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810656B2 (ja) * | 1977-01-25 | 1983-02-26 | 矢崎総業株式会社 | 太陽熱利用冷暖房給湯装置 |
| JPS58134470A (ja) * | 1982-02-05 | 1983-08-10 | Meidensha Electric Mfg Co Ltd | 増幅ゲ−ト構造のゲ−トタ−ンオフサイリスタ |
| JPH0680821B2 (ja) * | 1989-05-01 | 1994-10-12 | 株式会社東芝 | 高感度トライアック |
| US5592118A (en) * | 1994-03-09 | 1997-01-07 | Cooper Industries, Inc. | Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
| US5981982A (en) * | 1994-03-09 | 1999-11-09 | Driscoll; John Cuervo | Dual gated power electronic switching devices |
| US5656966A (en) * | 1994-03-09 | 1997-08-12 | Cooper Industries, Inc. | Turbine engine ignition exciter circuit including low voltage lockout control |
| US5970324A (en) * | 1994-03-09 | 1999-10-19 | Driscoll; John Cuervo | Methods of making dual gated power electronic switching devices |
| US7355300B2 (en) | 2004-06-15 | 2008-04-08 | Woodward Governor Company | Solid state turbine engine ignition exciter having elevated temperature operational capability |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917863B2 (ja) * | 1976-11-04 | 1984-04-24 | 三菱電機株式会社 | サイリスタ |
| JPS5942991B2 (ja) * | 1977-05-23 | 1984-10-18 | 株式会社日立製作所 | サイリスタ |
| DE2855265A1 (de) * | 1978-12-21 | 1980-07-10 | Bbc Brown Boveri & Cie | Thyristor |
-
1981
- 1981-05-14 CA CA000377573A patent/CA1163020A/en not_active Expired
- 1981-05-21 DE DE19813120254 patent/DE3120254A1/de active Granted
- 1981-05-21 SE SE8103222A patent/SE457837B/sv not_active IP Right Cessation
- 1981-05-22 CH CH3374/81A patent/CH656485A5/de not_active IP Right Cessation
- 1981-05-22 JP JP7680781A patent/JPS5710972A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE457837B (sv) | 1989-01-30 |
| JPS5710972A (en) | 1982-01-20 |
| CH656485A5 (de) | 1986-06-30 |
| SE8103222L (sv) | 1981-11-24 |
| DE3120254A1 (de) | 1982-05-27 |
| DE3120254C2 (enrdf_load_stackoverflow) | 1993-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |