JPS5710972A - High voltage semiconductor device - Google Patents

High voltage semiconductor device

Info

Publication number
JPS5710972A
JPS5710972A JP7680781A JP7680781A JPS5710972A JP S5710972 A JPS5710972 A JP S5710972A JP 7680781 A JP7680781 A JP 7680781A JP 7680781 A JP7680781 A JP 7680781A JP S5710972 A JPS5710972 A JP S5710972A
Authority
JP
Japan
Prior art keywords
semiconductor device
high voltage
voltage semiconductor
voltage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7680781A
Other languages
English (en)
Japanese (ja)
Inventor
Arubaato Keisu Tenpuru Bikutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5710972A publication Critical patent/JPS5710972A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP7680781A 1980-05-23 1981-05-22 High voltage semiconductor device Pending JPS5710972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15274280A 1980-05-23 1980-05-23

Publications (1)

Publication Number Publication Date
JPS5710972A true JPS5710972A (en) 1982-01-20

Family

ID=22544224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7680781A Pending JPS5710972A (en) 1980-05-23 1981-05-22 High voltage semiconductor device

Country Status (5)

Country Link
JP (1) JPS5710972A (enrdf_load_stackoverflow)
CA (1) CA1163020A (enrdf_load_stackoverflow)
CH (1) CH656485A5 (enrdf_load_stackoverflow)
DE (1) DE3120254A1 (enrdf_load_stackoverflow)
SE (1) SE457837B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5392542A (en) * 1977-01-25 1978-08-14 Yazaki Corp Method of controlling solar heat utilizing cooling and heating water feeding system
JPS58134470A (ja) * 1982-02-05 1983-08-10 Meidensha Electric Mfg Co Ltd 増幅ゲ−ト構造のゲ−トタ−ンオフサイリスタ
JPH02291172A (ja) * 1989-05-01 1990-11-30 Toshiba Corp 高感度トライアック

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592118A (en) * 1994-03-09 1997-01-07 Cooper Industries, Inc. Ignition exciter circuit with thyristors having high di/dt and high voltage blockage
US5981982A (en) * 1994-03-09 1999-11-09 Driscoll; John Cuervo Dual gated power electronic switching devices
US5656966A (en) * 1994-03-09 1997-08-12 Cooper Industries, Inc. Turbine engine ignition exciter circuit including low voltage lockout control
US5970324A (en) * 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US7355300B2 (en) 2004-06-15 2008-04-08 Woodward Governor Company Solid state turbine engine ignition exciter having elevated temperature operational capability

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588373A (en) * 1978-12-21 1980-07-04 Bbc Brown Boveri & Cie Thyristor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917863B2 (ja) * 1976-11-04 1984-04-24 三菱電機株式会社 サイリスタ
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588373A (en) * 1978-12-21 1980-07-04 Bbc Brown Boveri & Cie Thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5392542A (en) * 1977-01-25 1978-08-14 Yazaki Corp Method of controlling solar heat utilizing cooling and heating water feeding system
JPS58134470A (ja) * 1982-02-05 1983-08-10 Meidensha Electric Mfg Co Ltd 増幅ゲ−ト構造のゲ−トタ−ンオフサイリスタ
JPH02291172A (ja) * 1989-05-01 1990-11-30 Toshiba Corp 高感度トライアック

Also Published As

Publication number Publication date
SE457837B (sv) 1989-01-30
CA1163020A (en) 1984-02-28
CH656485A5 (de) 1986-06-30
SE8103222L (sv) 1981-11-24
DE3120254A1 (de) 1982-05-27
DE3120254C2 (enrdf_load_stackoverflow) 1993-09-23

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