CA1125421A - Solid state image sensor - Google Patents
Solid state image sensorInfo
- Publication number
- CA1125421A CA1125421A CA312,252A CA312252A CA1125421A CA 1125421 A CA1125421 A CA 1125421A CA 312252 A CA312252 A CA 312252A CA 1125421 A CA1125421 A CA 1125421A
- Authority
- CA
- Canada
- Prior art keywords
- sensor
- substrate
- solid state
- state image
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000005036 potential barrier Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101150077457 ACOX1 gene Proteins 0.000 description 1
- 241001497337 Euscorpius gamma Species 0.000 description 1
- 244000088959 Ochrosia oppositifolia Species 0.000 description 1
- 241001080526 Vertica Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- ACWBQPMHZXGDFX-QFIPXVFZSA-N valsartan Chemical class C1=CC(CN(C(=O)CCCC)[C@@H](C(C)C)C(O)=O)=CC=C1C1=CC=CC=C1C1=NN=NN1 ACWBQPMHZXGDFX-QFIPXVFZSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Picture Signal Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP126885/77 | 1977-09-29 | ||
| JP12688577A JPS5451318A (en) | 1977-09-29 | 1977-09-29 | Solid pickup unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1125421A true CA1125421A (en) | 1982-06-08 |
Family
ID=14946246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA312,252A Expired CA1125421A (en) | 1977-09-29 | 1978-09-28 | Solid state image sensor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5451318A (nl) |
| CA (1) | CA1125421A (nl) |
| DE (1) | DE2842346C2 (nl) |
| FR (1) | FR2409646A1 (nl) |
| GB (1) | GB2007937B (nl) |
| NL (1) | NL7809866A (nl) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55151592U (nl) * | 1979-04-19 | 1980-10-31 | ||
| JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
| JPS55163953A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Ccd shift register |
| JPS55163956A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Shift register and its driving method |
| DE2939403A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung zur zeilenweisen bildabtastung |
| JPS5665578A (en) * | 1979-10-31 | 1981-06-03 | Fujitsu Ltd | Two dimensional solidstate image sensor |
| JPS5685981A (en) * | 1979-12-15 | 1981-07-13 | Sharp Corp | Solid image pickup apparatus |
| JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
| JPS56136086A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Two-dimensional image pickup device |
| JPS56160081A (en) * | 1980-05-14 | 1981-12-09 | Matsushita Electronics Corp | Solid state image pickup apparatus |
| DE3173604D1 (en) * | 1981-05-19 | 1986-03-13 | Texas Instruments Inc | Infrared imaging system with infrared detector matrix, and method of imaging infrared energy |
| DE3121494A1 (de) * | 1981-05-29 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren |
| EP0066020B1 (en) * | 1981-06-03 | 1985-10-23 | Texas Instruments Incorporated | Infrared energy detector system utilizing a charge transfer device sensor |
| JPS586682A (ja) * | 1981-07-06 | 1983-01-14 | Sony Corp | 固体撮像装置 |
| JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
| JPS58142570A (ja) * | 1982-02-19 | 1983-08-24 | Sony Corp | 固体撮像装置 |
| JPS60254770A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | イメージセンサ |
| JPS61144874A (ja) * | 1984-12-19 | 1986-07-02 | Toshiba Corp | 電荷転送装置 |
| NL8503243A (nl) * | 1985-11-25 | 1987-06-16 | Optische Ind De Oude Delft Nv | Beeldopneeminrichting voor digitale radiografie. |
| JPH07107928B2 (ja) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | 固体撮像装置 |
| JPH02113678A (ja) * | 1988-10-21 | 1990-04-25 | Nec Corp | 固体撮像装置 |
| US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
| US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
| FR2687265A1 (fr) * | 1993-01-08 | 1993-08-13 | Scanera Sc | Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees. |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5654115B2 (nl) * | 1974-03-29 | 1981-12-23 | ||
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
| JPS5937629B2 (ja) * | 1975-01-30 | 1984-09-11 | ソニー株式会社 | 固体撮像体 |
| US3953733A (en) * | 1975-05-21 | 1976-04-27 | Rca Corporation | Method of operating imagers |
| JPS5846905B2 (ja) * | 1975-11-10 | 1983-10-19 | ソニー株式会社 | コタイサツゾウソウチ |
| JPS52109825A (en) * | 1976-03-11 | 1977-09-14 | Sony Corp | Solid state pick up unit |
-
1977
- 1977-09-29 JP JP12688577A patent/JPS5451318A/ja active Pending
-
1978
- 1978-09-22 FR FR7827214A patent/FR2409646A1/fr active Granted
- 1978-09-28 DE DE2842346A patent/DE2842346C2/de not_active Expired
- 1978-09-28 GB GB7838523A patent/GB2007937B/en not_active Expired
- 1978-09-28 CA CA312,252A patent/CA1125421A/en not_active Expired
- 1978-09-29 NL NL7809866A patent/NL7809866A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2842346C2 (de) | 1987-05-14 |
| NL7809866A (nl) | 1979-04-02 |
| GB2007937A (en) | 1979-05-23 |
| DE2842346A1 (de) | 1979-04-12 |
| GB2007937B (en) | 1982-03-03 |
| FR2409646A1 (fr) | 1979-06-15 |
| FR2409646B1 (nl) | 1983-11-18 |
| JPS5451318A (en) | 1979-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19990608 |