CA1088382A - Method of making a large scale integrated device having a planar surface - Google Patents
Method of making a large scale integrated device having a planar surfaceInfo
- Publication number
- CA1088382A CA1088382A CA271,002A CA271002A CA1088382A CA 1088382 A CA1088382 A CA 1088382A CA 271002 A CA271002 A CA 271002A CA 1088382 A CA1088382 A CA 1088382A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- metal
- masking
- insulating layer
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 230000000873 masking effect Effects 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 19
- 230000008021 deposition Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 21
- 230000001788 irregular Effects 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100114417 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) con-13 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65581476A | 1976-02-06 | 1976-02-06 | |
| US655,814 | 1976-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1088382A true CA1088382A (en) | 1980-10-28 |
Family
ID=24630480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA271,002A Expired CA1088382A (en) | 1976-02-06 | 1977-02-03 | Method of making a large scale integrated device having a planar surface |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5827664B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1088382A (enrdf_load_stackoverflow) |
| DE (1) | DE2703473A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2340620A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1521431A (enrdf_load_stackoverflow) |
| IT (1) | IT1079545B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4184909A (en) * | 1978-08-21 | 1980-01-22 | International Business Machines Corporation | Method of forming thin film interconnection systems |
| JPS59170692A (ja) * | 1983-03-16 | 1984-09-26 | Ebara Corp | 水封入熱交換器 |
| EP3368864B1 (de) | 2015-10-27 | 2020-03-04 | Schaeffler Technologies GmbH & Co. KG | Lageranordnung mit darin eingebauter elektrischer leitung zur bereitstellung von mehreren betriebsspannungen |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1267738B (de) * | 1962-10-29 | 1968-05-09 | Intellux Inc | Verfahren zur Herstellung von elektrischen Verbindungen zwischen den Stromkreisen von mehrlagigen gedruckten elektrischen Schaltungen |
| US3464855A (en) * | 1966-09-06 | 1969-09-02 | North American Rockwell | Process for forming interconnections in a multilayer circuit board |
| DE1765013A1 (de) * | 1968-03-21 | 1971-07-01 | Telefunken Patent | Verfahren zur Herstellung von Mehrebenenschaltungen |
| DE2059425A1 (de) * | 1970-12-02 | 1972-06-22 | Siemens Ag | Partieller Aufbau von gedruckten Mehrlagenschaltungen |
| JPS4960870A (enrdf_load_stackoverflow) * | 1972-10-16 | 1974-06-13 | ||
| US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
| JPS5120681A (en) * | 1974-07-27 | 1976-02-19 | Oki Electric Ind Co Ltd | Handotaisochino seizohoho |
| NL7415841A (nl) * | 1974-12-05 | 1976-06-09 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting, vervaardigd volgens de werkwijze. |
| JPS5272571A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
-
1976
- 1976-12-30 FR FR7639828A patent/FR2340620A1/fr active Granted
-
1977
- 1977-01-19 JP JP52004049A patent/JPS5827664B2/ja not_active Expired
- 1977-01-19 GB GB205677A patent/GB1521431A/en not_active Expired
- 1977-01-28 IT IT1972177A patent/IT1079545B/it active
- 1977-01-28 DE DE19772703473 patent/DE2703473A1/de active Granted
- 1977-02-03 CA CA271,002A patent/CA1088382A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2340620A1 (fr) | 1977-09-02 |
| JPS5295987A (en) | 1977-08-12 |
| FR2340620B1 (enrdf_load_stackoverflow) | 1979-09-28 |
| JPS5827664B2 (ja) | 1983-06-10 |
| DE2703473C2 (enrdf_load_stackoverflow) | 1991-01-24 |
| GB1521431A (en) | 1978-08-16 |
| DE2703473A1 (de) | 1977-08-11 |
| IT1079545B (it) | 1985-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |