CA1074630A - Method of forming an oxide layer on a silicon substrate - Google Patents

Method of forming an oxide layer on a silicon substrate

Info

Publication number
CA1074630A
CA1074630A CA266,270A CA266270A CA1074630A CA 1074630 A CA1074630 A CA 1074630A CA 266270 A CA266270 A CA 266270A CA 1074630 A CA1074630 A CA 1074630A
Authority
CA
Canada
Prior art keywords
silicon
temperature
trichloroethylene
oxygen
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA266,270A
Other languages
English (en)
French (fr)
Inventor
Takeshi Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1074630A publication Critical patent/CA1074630A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H10P14/6322—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA266,270A 1975-12-01 1976-11-22 Method of forming an oxide layer on a silicon substrate Expired CA1074630A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143472A JPS5826661B2 (ja) 1975-12-01 1975-12-01 サンカマクノ ケイセイホウホウ

Publications (1)

Publication Number Publication Date
CA1074630A true CA1074630A (en) 1980-04-01

Family

ID=15339483

Family Applications (1)

Application Number Title Priority Date Filing Date
CA266,270A Expired CA1074630A (en) 1975-12-01 1976-11-22 Method of forming an oxide layer on a silicon substrate

Country Status (6)

Country Link
JP (1) JPS5826661B2 (cg-RX-API-DMAC10.html)
CA (1) CA1074630A (cg-RX-API-DMAC10.html)
DE (1) DE2654493A1 (cg-RX-API-DMAC10.html)
FR (1) FR2334200A1 (cg-RX-API-DMAC10.html)
GB (1) GB1549256A (cg-RX-API-DMAC10.html)
NL (1) NL7613392A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3142548A1 (de) * 1981-10-27 1983-05-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von oxidschichten auf aus silizium oder anderem oxidierbarem material bestehenden substratscheiben in extrem trockener sauerstoffatmosphaere bzw. in sauerstoffatmosphaere mit chlorwasserstoffgas-zusaetzen
CN111785612B (zh) * 2020-08-21 2022-05-17 中电晶华(天津)半导体材料有限公司 一种vdmos功率器件用二氧化硅层的制备方法

Also Published As

Publication number Publication date
FR2334200A1 (fr) 1977-07-01
GB1549256A (en) 1979-08-01
FR2334200B1 (cg-RX-API-DMAC10.html) 1983-02-11
JPS5826661B2 (ja) 1983-06-04
NL7613392A (nl) 1977-06-03
JPS5267268A (en) 1977-06-03
DE2654493A1 (de) 1977-06-08

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