FR2334200B1 - - Google Patents
Info
- Publication number
- FR2334200B1 FR2334200B1 FR7636267A FR7636267A FR2334200B1 FR 2334200 B1 FR2334200 B1 FR 2334200B1 FR 7636267 A FR7636267 A FR 7636267A FR 7636267 A FR7636267 A FR 7636267A FR 2334200 B1 FR2334200 B1 FR 2334200B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/6309—
-
- H10P14/6322—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50143472A JPS5826661B2 (ja) | 1975-12-01 | 1975-12-01 | サンカマクノ ケイセイホウホウ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2334200A1 FR2334200A1 (fr) | 1977-07-01 |
| FR2334200B1 true FR2334200B1 (cg-RX-API-DMAC10.html) | 1983-02-11 |
Family
ID=15339483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7636267A Granted FR2334200A1 (fr) | 1975-12-01 | 1976-12-01 | Procede pour former une couche d'oxyde sur un substrat de silicium |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5826661B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1074630A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2654493A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2334200A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1549256A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7613392A (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3142548A1 (de) * | 1981-10-27 | 1983-05-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von oxidschichten auf aus silizium oder anderem oxidierbarem material bestehenden substratscheiben in extrem trockener sauerstoffatmosphaere bzw. in sauerstoffatmosphaere mit chlorwasserstoffgas-zusaetzen |
| CN111785612B (zh) * | 2020-08-21 | 2022-05-17 | 中电晶华(天津)半导体材料有限公司 | 一种vdmos功率器件用二氧化硅层的制备方法 |
-
1975
- 1975-12-01 JP JP50143472A patent/JPS5826661B2/ja not_active Expired
-
1976
- 1976-11-22 CA CA266,270A patent/CA1074630A/en not_active Expired
- 1976-11-30 GB GB49901/76A patent/GB1549256A/en not_active Expired
- 1976-12-01 NL NL7613392A patent/NL7613392A/xx not_active Application Discontinuation
- 1976-12-01 DE DE19762654493 patent/DE2654493A1/de not_active Withdrawn
- 1976-12-01 FR FR7636267A patent/FR2334200A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2334200A1 (fr) | 1977-07-01 |
| GB1549256A (en) | 1979-08-01 |
| JPS5826661B2 (ja) | 1983-06-04 |
| NL7613392A (nl) | 1977-06-03 |
| JPS5267268A (en) | 1977-06-03 |
| DE2654493A1 (de) | 1977-06-08 |
| CA1074630A (en) | 1980-04-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |