JPS5267268A - Formation of oxidization film - Google Patents
Formation of oxidization filmInfo
- Publication number
- JPS5267268A JPS5267268A JP50143472A JP14347275A JPS5267268A JP S5267268 A JPS5267268 A JP S5267268A JP 50143472 A JP50143472 A JP 50143472A JP 14347275 A JP14347275 A JP 14347275A JP S5267268 A JPS5267268 A JP S5267268A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- oxidization film
- oxidization
- film
- siliconsubstrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To ensure formation of oxidization film containing no impurity, and also to prevent lamination fault occurrence for siliconsubstrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50143472A JPS5826661B2 (en) | 1975-12-01 | 1975-12-01 | Sankamakuno Keiseihouhou |
CA266,270A CA1074630A (en) | 1975-12-01 | 1976-11-22 | Method of forming an oxide layer on a silicon substrate |
GB49901/76A GB1549256A (en) | 1975-12-01 | 1976-11-30 | Methods of forming an oxide layer on silicon |
DE19762654493 DE2654493A1 (en) | 1975-12-01 | 1976-12-01 | METHOD FOR GENERATING AN OXIDE LAYER ON A SILICONE SUBSTRATE |
FR7636267A FR2334200A1 (en) | 1975-12-01 | 1976-12-01 | PROCESS FOR FORMING AN OXIDE LAYER ON A SILICON SUBSTRATE |
NL7613392A NL7613392A (en) | 1975-12-01 | 1976-12-01 | METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50143472A JPS5826661B2 (en) | 1975-12-01 | 1975-12-01 | Sankamakuno Keiseihouhou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5267268A true JPS5267268A (en) | 1977-06-03 |
JPS5826661B2 JPS5826661B2 (en) | 1983-06-04 |
Family
ID=15339483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50143472A Expired JPS5826661B2 (en) | 1975-12-01 | 1975-12-01 | Sankamakuno Keiseihouhou |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5826661B2 (en) |
CA (1) | CA1074630A (en) |
DE (1) | DE2654493A1 (en) |
FR (1) | FR2334200A1 (en) |
GB (1) | GB1549256A (en) |
NL (1) | NL7613392A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111785612A (en) * | 2020-08-21 | 2020-10-16 | 中电晶华(天津)半导体材料有限公司 | Preparation method of silicon dioxide layer for VDMOS power device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3142548A1 (en) * | 1981-10-27 | 1983-05-05 | Siemens AG, 1000 Berlin und 8000 München | Process for producing oxide layers on substrate wafers consisting of silicon or another oxidisable material in an extremely dry oxygen atmosphere or in an oxygen atmosphere with hydrogen chloride gas added |
-
1975
- 1975-12-01 JP JP50143472A patent/JPS5826661B2/en not_active Expired
-
1976
- 1976-11-22 CA CA266,270A patent/CA1074630A/en not_active Expired
- 1976-11-30 GB GB49901/76A patent/GB1549256A/en not_active Expired
- 1976-12-01 NL NL7613392A patent/NL7613392A/en not_active Application Discontinuation
- 1976-12-01 DE DE19762654493 patent/DE2654493A1/en not_active Withdrawn
- 1976-12-01 FR FR7636267A patent/FR2334200A1/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111785612A (en) * | 2020-08-21 | 2020-10-16 | 中电晶华(天津)半导体材料有限公司 | Preparation method of silicon dioxide layer for VDMOS power device |
CN111785612B (en) * | 2020-08-21 | 2022-05-17 | 中电晶华(天津)半导体材料有限公司 | Preparation method of silicon dioxide layer for VDMOS power device |
Also Published As
Publication number | Publication date |
---|---|
NL7613392A (en) | 1977-06-03 |
GB1549256A (en) | 1979-08-01 |
DE2654493A1 (en) | 1977-06-08 |
CA1074630A (en) | 1980-04-01 |
FR2334200A1 (en) | 1977-07-01 |
FR2334200B1 (en) | 1983-02-11 |
JPS5826661B2 (en) | 1983-06-04 |
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