NL7613392A - METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE. - Google Patents
METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE.Info
- Publication number
- NL7613392A NL7613392A NL7613392A NL7613392A NL7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A
- Authority
- NL
- Netherlands
- Prior art keywords
- forming
- oxide layer
- silicone substrate
- silicone
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50143472A JPS5826661B2 (en) | 1975-12-01 | 1975-12-01 | Sankamakuno Keiseihouhou |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7613392A true NL7613392A (en) | 1977-06-03 |
Family
ID=15339483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7613392A NL7613392A (en) | 1975-12-01 | 1976-12-01 | METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5826661B2 (en) |
CA (1) | CA1074630A (en) |
DE (1) | DE2654493A1 (en) |
FR (1) | FR2334200A1 (en) |
GB (1) | GB1549256A (en) |
NL (1) | NL7613392A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3142548A1 (en) * | 1981-10-27 | 1983-05-05 | Siemens AG, 1000 Berlin und 8000 München | Process for producing oxide layers on substrate wafers consisting of silicon or another oxidisable material in an extremely dry oxygen atmosphere or in an oxygen atmosphere with hydrogen chloride gas added |
CN111785612B (en) * | 2020-08-21 | 2022-05-17 | 中电晶华(天津)半导体材料有限公司 | Preparation method of silicon dioxide layer for VDMOS power device |
-
1975
- 1975-12-01 JP JP50143472A patent/JPS5826661B2/en not_active Expired
-
1976
- 1976-11-22 CA CA266,270A patent/CA1074630A/en not_active Expired
- 1976-11-30 GB GB49901/76A patent/GB1549256A/en not_active Expired
- 1976-12-01 FR FR7636267A patent/FR2334200A1/en active Granted
- 1976-12-01 NL NL7613392A patent/NL7613392A/en not_active Application Discontinuation
- 1976-12-01 DE DE19762654493 patent/DE2654493A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2654493A1 (en) | 1977-06-08 |
FR2334200B1 (en) | 1983-02-11 |
CA1074630A (en) | 1980-04-01 |
JPS5267268A (en) | 1977-06-03 |
JPS5826661B2 (en) | 1983-06-04 |
GB1549256A (en) | 1979-08-01 |
FR2334200A1 (en) | 1977-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |