NL7613392A - METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE. - Google Patents

METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE.

Info

Publication number
NL7613392A
NL7613392A NL7613392A NL7613392A NL7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A NL 7613392 A NL7613392 A NL 7613392A
Authority
NL
Netherlands
Prior art keywords
forming
oxide layer
silicone substrate
silicone
substrate
Prior art date
Application number
NL7613392A
Other languages
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7613392A publication Critical patent/NL7613392A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7613392A 1975-12-01 1976-12-01 METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE. NL7613392A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143472A JPS5826661B2 (en) 1975-12-01 1975-12-01 Sankamakuno Keiseihouhou

Publications (1)

Publication Number Publication Date
NL7613392A true NL7613392A (en) 1977-06-03

Family

ID=15339483

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7613392A NL7613392A (en) 1975-12-01 1976-12-01 METHOD FOR FORMING AN OXIDE LAYER ON A SILICONE SUBSTRATE.

Country Status (6)

Country Link
JP (1) JPS5826661B2 (en)
CA (1) CA1074630A (en)
DE (1) DE2654493A1 (en)
FR (1) FR2334200A1 (en)
GB (1) GB1549256A (en)
NL (1) NL7613392A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3142548A1 (en) * 1981-10-27 1983-05-05 Siemens AG, 1000 Berlin und 8000 München Process for producing oxide layers on substrate wafers consisting of silicon or another oxidisable material in an extremely dry oxygen atmosphere or in an oxygen atmosphere with hydrogen chloride gas added
CN111785612B (en) * 2020-08-21 2022-05-17 中电晶华(天津)半导体材料有限公司 Preparation method of silicon dioxide layer for VDMOS power device

Also Published As

Publication number Publication date
DE2654493A1 (en) 1977-06-08
FR2334200B1 (en) 1983-02-11
CA1074630A (en) 1980-04-01
JPS5267268A (en) 1977-06-03
JPS5826661B2 (en) 1983-06-04
GB1549256A (en) 1979-08-01
FR2334200A1 (en) 1977-07-01

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Legal Events

Date Code Title Description
BV The patent application has lapsed