CA1070427A - N-channel storage field effect transistors - Google Patents

N-channel storage field effect transistors

Info

Publication number
CA1070427A
CA1070427A CA235,230A CA235230A CA1070427A CA 1070427 A CA1070427 A CA 1070427A CA 235230 A CA235230 A CA 235230A CA 1070427 A CA1070427 A CA 1070427A
Authority
CA
Canada
Prior art keywords
storage
gate
channel
fet
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA235,230A
Other languages
English (en)
French (fr)
Inventor
Bernward Rossler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445137A external-priority patent/DE2445137C3/de
Priority claimed from DE2505816A external-priority patent/DE2505816C3/de
Priority claimed from DE2513207A external-priority patent/DE2513207C2/de
Priority claimed from DE19752525097 external-priority patent/DE2525097C3/de
Priority claimed from DE19752525062 external-priority patent/DE2525062C2/de
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1070427A publication Critical patent/CA1070427A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
CA235,230A 1974-09-20 1975-09-11 N-channel storage field effect transistors Expired CA1070427A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE2445137A DE2445137C3 (de) 1974-09-20 1974-09-20 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2505816A DE2505816C3 (de) 1974-09-20 1975-02-12 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2513207A DE2513207C2 (de) 1974-09-20 1975-03-25 n-Kanal-Speicher-FET
DE19752525097 DE2525097C3 (de) 1975-06-05 1975-06-05 Verfahren zum Betrieb eines n-Kanal-Speicher-FET
DE19752525062 DE2525062C2 (de) 1975-06-05 1975-06-05 Matrixanordnung aus n-Kanal-Speicher-FET

Publications (1)

Publication Number Publication Date
CA1070427A true CA1070427A (en) 1980-01-22

Family

ID=27510366

Family Applications (1)

Application Number Title Priority Date Filing Date
CA235,230A Expired CA1070427A (en) 1974-09-20 1975-09-11 N-channel storage field effect transistors

Country Status (11)

Country Link
JP (1) JPS5157255A (enrdf_load_stackoverflow)
AT (1) AT365000B (enrdf_load_stackoverflow)
AU (1) AU498494B2 (enrdf_load_stackoverflow)
BE (1) BE833633A (enrdf_load_stackoverflow)
CA (1) CA1070427A (enrdf_load_stackoverflow)
CH (1) CH607233A5 (enrdf_load_stackoverflow)
DK (1) DK143923C (enrdf_load_stackoverflow)
FR (1) FR2285677A1 (enrdf_load_stackoverflow)
GB (1) GB1517927A (enrdf_load_stackoverflow)
IT (1) IT1042632B (enrdf_load_stackoverflow)
NL (1) NL175561C (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391585A (en) * 1977-04-04 1978-08-11 Agency Of Ind Science & Technol Nonvolatile field effect transistor
US4173766A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
SE7907193L (sv) * 1978-09-28 1980-03-29 Rca Corp Bestendigt minne
JPS5560469U (enrdf_load_stackoverflow) * 1978-10-20 1980-04-24
JPS5571072A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Semiconductor nonvolatile memory
JPS57160163A (en) * 1981-03-27 1982-10-02 Agency Of Ind Science & Technol Nonvolatile semiconductor memory
JPS5864068A (ja) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法
JPH04307974A (ja) * 1991-04-05 1992-10-30 Sharp Corp 電気的消去可能不揮発性半導体記憶装置
CN111739572A (zh) * 2019-03-25 2020-10-02 亿而得微电子股份有限公司 电子写入可擦除可重写只读存储器的低压快速擦除方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526148B2 (enrdf_load_stackoverflow) * 1972-05-18 1977-02-19

Also Published As

Publication number Publication date
DK143923C (da) 1982-04-19
CH607233A5 (enrdf_load_stackoverflow) 1978-11-30
NL175561C (nl) 1984-11-16
DK419975A (da) 1976-03-21
JPS5157255A (enrdf_load_stackoverflow) 1976-05-19
DK143923B (da) 1981-10-26
BE833633A (fr) 1976-03-19
FR2285677A1 (fr) 1976-04-16
ATA646575A (de) 1981-04-15
NL175561B (nl) 1984-06-18
AU498494B2 (en) 1979-03-15
GB1517927A (en) 1978-07-19
FR2285677B1 (enrdf_load_stackoverflow) 1981-05-29
NL7511017A (nl) 1976-03-23
IT1042632B (it) 1980-01-30
AU8479775A (en) 1977-03-17
AT365000B (de) 1981-11-25

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