CA1065460A - Buried-heterostructure diode injection laser - Google Patents
Buried-heterostructure diode injection laserInfo
- Publication number
- CA1065460A CA1065460A CA252,590A CA252590A CA1065460A CA 1065460 A CA1065460 A CA 1065460A CA 252590 A CA252590 A CA 252590A CA 1065460 A CA1065460 A CA 1065460A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- groove
- substrate
- laser
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title abstract 3
- 239000007924 injection Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 83
- 230000006798 recombination Effects 0.000 claims abstract description 8
- 238000005215 recombination Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 261
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000002344 surface layer Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 210000001364 upper extremity Anatomy 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000011149 active material Substances 0.000 description 16
- 238000009740 moulding (composite fabrication) Methods 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 108091006146 Channels Proteins 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 210000003141 lower extremity Anatomy 0.000 description 5
- 230000000994 depressogenic effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 210000003414 extremity Anatomy 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/589,277 US4033796A (en) | 1975-06-23 | 1975-06-23 | Method of making buried-heterostructure diode injection laser |
| US05/589,120 US3978428A (en) | 1975-06-23 | 1975-06-23 | Buried-heterostructure diode injection laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1065460A true CA1065460A (en) | 1979-10-30 |
Family
ID=27080453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA252,590A Expired CA1065460A (en) | 1975-06-23 | 1976-05-14 | Buried-heterostructure diode injection laser |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS523392A (enrdf_load_stackoverflow) |
| AU (1) | AU501061B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1065460A (enrdf_load_stackoverflow) |
| DE (1) | DE2626775C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2315785A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1546729A (enrdf_load_stackoverflow) |
| NL (1) | NL7606798A (enrdf_load_stackoverflow) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234686A (en) * | 1975-09-10 | 1977-03-16 | Sumitomo Electric Ind Ltd | Double hetero junction type semiconductor laser element and its manufa cturing process |
| GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| DE2757470A1 (de) * | 1977-12-22 | 1979-07-05 | Siemens Ag | Verfahren zum herstellen einer halbleiteranordnung |
| CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
| JPS56161688A (en) * | 1980-05-16 | 1981-12-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
| JPS5910039Y2 (ja) * | 1980-03-18 | 1984-03-29 | 大日本印刷株式会社 | 商品展示函 |
| JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
| JPS5763885A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS5791574A (en) * | 1980-11-28 | 1982-06-07 | Nec Corp | Light emitting diode |
| JPS5792880A (en) * | 1980-12-02 | 1982-06-09 | Toshiba Corp | Light emitting diode |
| JPS57162484A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor luminous device |
| JPS58225683A (ja) * | 1982-06-22 | 1983-12-27 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
| GB2123604B (en) * | 1982-06-29 | 1985-12-18 | Standard Telephones Cables Ltd | Injection laser manufacture |
| JPS599990A (ja) * | 1982-07-07 | 1984-01-19 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
| JP2553580B2 (ja) * | 1987-08-19 | 1996-11-13 | 三菱電機株式会社 | 半導体レ−ザ装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2859178A (en) * | 1955-12-19 | 1958-11-04 | Exxon Research Engineering Co | Method of lubricating bearings |
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
| JPS51114887A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1976
- 1976-05-14 CA CA252,590A patent/CA1065460A/en not_active Expired
- 1976-05-26 FR FR7615955A patent/FR2315785A1/fr active Granted
- 1976-06-15 DE DE2626775A patent/DE2626775C2/de not_active Expired
- 1976-06-16 JP JP7091576A patent/JPS523392A/ja active Granted
- 1976-06-18 GB GB25356/76A patent/GB1546729A/en not_active Expired
- 1976-06-22 NL NL7606798A patent/NL7606798A/xx not_active Application Discontinuation
- 1976-06-23 AU AU15210/76A patent/AU501061B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1546729A (en) | 1979-05-31 |
| JPS5653237B2 (enrdf_load_stackoverflow) | 1981-12-17 |
| FR2315785B1 (enrdf_load_stackoverflow) | 1983-03-25 |
| AU501061B2 (en) | 1979-06-07 |
| AU1521076A (en) | 1978-01-05 |
| FR2315785A1 (fr) | 1977-01-21 |
| DE2626775A1 (de) | 1976-12-30 |
| DE2626775C2 (de) | 1983-04-21 |
| NL7606798A (nl) | 1976-12-27 |
| JPS523392A (en) | 1977-01-11 |
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