CA1056058A - Semiconductor image sensor having ccd shift register - Google Patents
Semiconductor image sensor having ccd shift registerInfo
- Publication number
- CA1056058A CA1056058A CA242,395A CA242395A CA1056058A CA 1056058 A CA1056058 A CA 1056058A CA 242395 A CA242395 A CA 242395A CA 1056058 A CA1056058 A CA 1056058A
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- substrate
- insulating layer
- region
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000012546 transfer Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 87
- 239000002800 charge carrier Substances 0.000 claims description 24
- 238000005036 potential barrier Methods 0.000 claims description 12
- 229940000425 combination drug Drugs 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000012634 fragment Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- FOXFZRUHNHCZPX-UHFFFAOYSA-N metribuzin Chemical compound CSC1=NN=C(C(C)(C)C)C(=O)N1N FOXFZRUHNHCZPX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP753860A JPS5732547B2 (xx) | 1974-12-25 | 1974-12-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1056058A true CA1056058A (en) | 1979-06-05 |
Family
ID=11568935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA242,395A Expired CA1056058A (en) | 1974-12-25 | 1975-12-23 | Semiconductor image sensor having ccd shift register |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5732547B2 (xx) |
| CA (1) | CA1056058A (xx) |
| DE (1) | DE2558337C2 (xx) |
| FR (1) | FR2296266A1 (xx) |
| GB (1) | GB1533001A (xx) |
| NL (1) | NL7515024A (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2606308C2 (de) | 1976-02-17 | 1985-05-23 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler optoelektronischer Halbleitersensor |
| JPS5374893A (en) * | 1976-12-15 | 1978-07-03 | Fujitsu Ltd | Driving method for semiconductor photosensitive device |
| JPS606147B2 (ja) * | 1979-12-07 | 1985-02-15 | 株式会社東芝 | 固体撮像装置 |
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| JPS6080272A (ja) * | 1983-10-07 | 1985-05-08 | Canon Inc | 電荷転送素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE35581B1 (en) * | 1970-09-04 | 1976-03-31 | Gen Electric | Semiconductor apparatus for selectively moving electrical charges |
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
-
1974
- 1974-12-25 JP JP753860A patent/JPS5732547B2/ja not_active Expired
-
1975
- 1975-12-23 NL NL7515024A patent/NL7515024A/xx not_active Application Discontinuation
- 1975-12-23 GB GB52649/75A patent/GB1533001A/en not_active Expired
- 1975-12-23 CA CA242,395A patent/CA1056058A/en not_active Expired
- 1975-12-23 DE DE2558337A patent/DE2558337C2/de not_active Expired
- 1975-12-24 FR FR7539766A patent/FR2296266A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5732547B2 (xx) | 1982-07-12 |
| FR2296266A1 (fr) | 1976-07-23 |
| JPS5175321A (xx) | 1976-06-29 |
| NL7515024A (nl) | 1976-06-29 |
| DE2558337C2 (de) | 1983-04-14 |
| GB1533001A (en) | 1978-11-22 |
| DE2558337A1 (de) | 1976-07-08 |
| FR2296266B1 (xx) | 1982-09-24 |
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