FR2296266B1 - - Google Patents
Info
- Publication number
- FR2296266B1 FR2296266B1 FR7539766A FR7539766A FR2296266B1 FR 2296266 B1 FR2296266 B1 FR 2296266B1 FR 7539766 A FR7539766 A FR 7539766A FR 7539766 A FR7539766 A FR 7539766A FR 2296266 B1 FR2296266 B1 FR 2296266B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP753860A JPS5732547B2 (xx) | 1974-12-25 | 1974-12-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2296266A1 FR2296266A1 (fr) | 1976-07-23 |
| FR2296266B1 true FR2296266B1 (xx) | 1982-09-24 |
Family
ID=11568935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7539766A Granted FR2296266A1 (fr) | 1974-12-25 | 1975-12-24 | Capteur d'images a semi-conducteur avec registres a decalage a couplage de charges |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5732547B2 (xx) |
| CA (1) | CA1056058A (xx) |
| DE (1) | DE2558337C2 (xx) |
| FR (1) | FR2296266A1 (xx) |
| GB (1) | GB1533001A (xx) |
| NL (1) | NL7515024A (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2606308C2 (de) | 1976-02-17 | 1985-05-23 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler optoelektronischer Halbleitersensor |
| JPS5374893A (en) * | 1976-12-15 | 1978-07-03 | Fujitsu Ltd | Driving method for semiconductor photosensitive device |
| JPS606147B2 (ja) * | 1979-12-07 | 1985-02-15 | 株式会社東芝 | 固体撮像装置 |
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| JPS6080272A (ja) * | 1983-10-07 | 1985-05-08 | Canon Inc | 電荷転送素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE35581B1 (en) * | 1970-09-04 | 1976-03-31 | Gen Electric | Semiconductor apparatus for selectively moving electrical charges |
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
-
1974
- 1974-12-25 JP JP753860A patent/JPS5732547B2/ja not_active Expired
-
1975
- 1975-12-23 CA CA242,395A patent/CA1056058A/en not_active Expired
- 1975-12-23 GB GB52649/75A patent/GB1533001A/en not_active Expired
- 1975-12-23 NL NL7515024A patent/NL7515024A/xx not_active Application Discontinuation
- 1975-12-23 DE DE2558337A patent/DE2558337C2/de not_active Expired
- 1975-12-24 FR FR7539766A patent/FR2296266A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1533001A (en) | 1978-11-22 |
| CA1056058A (en) | 1979-06-05 |
| DE2558337C2 (de) | 1983-04-14 |
| FR2296266A1 (fr) | 1976-07-23 |
| DE2558337A1 (de) | 1976-07-08 |
| JPS5732547B2 (xx) | 1982-07-12 |
| NL7515024A (nl) | 1976-06-29 |
| JPS5175321A (xx) | 1976-06-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |