CA1041226A - P-type-epitaxial-base transistor with base-collector schottky diode clamp - Google Patents

P-type-epitaxial-base transistor with base-collector schottky diode clamp

Info

Publication number
CA1041226A
CA1041226A CA255,056A CA255056A CA1041226A CA 1041226 A CA1041226 A CA 1041226A CA 255056 A CA255056 A CA 255056A CA 1041226 A CA1041226 A CA 1041226A
Authority
CA
Canada
Prior art keywords
region
layer
base
transistor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA255,056A
Other languages
English (en)
French (fr)
Inventor
Vincent J. Lucarini
Augustine W. Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1041226A publication Critical patent/CA1041226A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CA255,056A 1975-06-20 1976-06-16 P-type-epitaxial-base transistor with base-collector schottky diode clamp Expired CA1041226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/588,918 US4005469A (en) 1975-06-20 1975-06-20 P-type-epitaxial-base transistor with base-collector Schottky diode clamp

Publications (1)

Publication Number Publication Date
CA1041226A true CA1041226A (en) 1978-10-24

Family

ID=24355851

Family Applications (1)

Application Number Title Priority Date Filing Date
CA255,056A Expired CA1041226A (en) 1975-06-20 1976-06-16 P-type-epitaxial-base transistor with base-collector schottky diode clamp

Country Status (7)

Country Link
US (1) US4005469A (enExample)
JP (1) JPS522288A (enExample)
CA (1) CA1041226A (enExample)
DE (1) DE2621791A1 (enExample)
FR (1) FR2315171A1 (enExample)
GB (1) GB1516034A (enExample)
IT (1) IT1064219B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2733615A1 (de) * 1977-07-26 1979-02-01 Ibm Deutschland Hochintegrierte halbleiteranordnung enthaltend eine dioden-/widerstandskonfiguration
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4282538A (en) * 1977-11-11 1981-08-04 Rca Corporation Method of integrating semiconductor components
US4329703A (en) * 1978-07-21 1982-05-11 Monolithic Memories, Inc. Lateral PNP transistor
JPS58223345A (ja) * 1982-06-21 1983-12-24 Toshiba Corp 半導体装置
US4503521A (en) * 1982-06-25 1985-03-05 International Business Machines Corporation Non-volatile memory and switching device
US4538490A (en) * 1983-05-02 1985-09-03 Celanese Corporation Staple fiber cutter
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
US7329940B2 (en) * 2005-11-02 2008-02-12 International Business Machines Corporation Semiconductor structure and method of manufacture
US7718481B2 (en) * 2006-04-17 2010-05-18 International Business Machines Corporation Semiconductor structure and method of manufacture
US7538409B2 (en) * 2006-06-07 2009-05-26 International Business Machines Corporation Semiconductor devices
US7242071B1 (en) 2006-07-06 2007-07-10 International Business Machine Corporation Semiconductor structure
US7936041B2 (en) 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
US3878552A (en) * 1972-11-13 1975-04-15 Thurman J Rodgers Bipolar integrated circuit and method

Also Published As

Publication number Publication date
FR2315171A1 (fr) 1977-01-14
JPS5724935B2 (enExample) 1982-05-26
US4005469A (en) 1977-01-25
IT1064219B (it) 1985-02-18
DE2621791A1 (de) 1976-12-30
FR2315171B1 (enExample) 1978-11-17
JPS522288A (en) 1977-01-08
GB1516034A (en) 1978-06-28

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