CA1041226A - P-type-epitaxial-base transistor with base-collector schottky diode clamp - Google Patents
P-type-epitaxial-base transistor with base-collector schottky diode clampInfo
- Publication number
- CA1041226A CA1041226A CA255,056A CA255056A CA1041226A CA 1041226 A CA1041226 A CA 1041226A CA 255056 A CA255056 A CA 255056A CA 1041226 A CA1041226 A CA 1041226A
- Authority
- CA
- Canada
- Prior art keywords
- region
- layer
- base
- transistor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/588,918 US4005469A (en) | 1975-06-20 | 1975-06-20 | P-type-epitaxial-base transistor with base-collector Schottky diode clamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1041226A true CA1041226A (en) | 1978-10-24 |
Family
ID=24355851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA255,056A Expired CA1041226A (en) | 1975-06-20 | 1976-06-16 | P-type-epitaxial-base transistor with base-collector schottky diode clamp |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4005469A (enExample) |
| JP (1) | JPS522288A (enExample) |
| CA (1) | CA1041226A (enExample) |
| DE (1) | DE2621791A1 (enExample) |
| FR (1) | FR2315171A1 (enExample) |
| GB (1) | GB1516034A (enExample) |
| IT (1) | IT1064219B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2733615A1 (de) * | 1977-07-26 | 1979-02-01 | Ibm Deutschland | Hochintegrierte halbleiteranordnung enthaltend eine dioden-/widerstandskonfiguration |
| US4159915A (en) * | 1977-10-25 | 1979-07-03 | International Business Machines Corporation | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation |
| US4282538A (en) * | 1977-11-11 | 1981-08-04 | Rca Corporation | Method of integrating semiconductor components |
| US4329703A (en) * | 1978-07-21 | 1982-05-11 | Monolithic Memories, Inc. | Lateral PNP transistor |
| JPS58223345A (ja) * | 1982-06-21 | 1983-12-24 | Toshiba Corp | 半導体装置 |
| US4503521A (en) * | 1982-06-25 | 1985-03-05 | International Business Machines Corporation | Non-volatile memory and switching device |
| US4538490A (en) * | 1983-05-02 | 1985-09-03 | Celanese Corporation | Staple fiber cutter |
| US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
| US7329940B2 (en) * | 2005-11-02 | 2008-02-12 | International Business Machines Corporation | Semiconductor structure and method of manufacture |
| US7718481B2 (en) * | 2006-04-17 | 2010-05-18 | International Business Machines Corporation | Semiconductor structure and method of manufacture |
| US7538409B2 (en) * | 2006-06-07 | 2009-05-26 | International Business Machines Corporation | Semiconductor devices |
| US7242071B1 (en) | 2006-07-06 | 2007-07-10 | International Business Machine Corporation | Semiconductor structure |
| US7936041B2 (en) | 2006-09-15 | 2011-05-03 | International Business Machines Corporation | Schottky barrier diodes for millimeter wave SiGe BICMOS applications |
| US11342916B2 (en) | 2008-12-23 | 2022-05-24 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
| US9853643B2 (en) | 2008-12-23 | 2017-12-26 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
| US8476689B2 (en) | 2008-12-23 | 2013-07-02 | Augustine Wei-Chun Chang | Super CMOS devices on a microelectronics system |
| US11955476B2 (en) | 2008-12-23 | 2024-04-09 | Schottky Lsi, Inc. | Super CMOS devices on a microelectronics system |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3463975A (en) * | 1964-12-31 | 1969-08-26 | Texas Instruments Inc | Unitary semiconductor high speed switching device utilizing a barrier diode |
| US3506893A (en) * | 1968-06-27 | 1970-04-14 | Ibm | Integrated circuits with surface barrier diodes |
| US3571674A (en) * | 1969-01-10 | 1971-03-23 | Fairchild Camera Instr Co | Fast switching pnp transistor |
| US3699362A (en) * | 1971-05-27 | 1972-10-17 | Ibm | Transistor logic circuit |
| US3861968A (en) * | 1972-06-19 | 1975-01-21 | Ibm | Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition |
| US3878552A (en) * | 1972-11-13 | 1975-04-15 | Thurman J Rodgers | Bipolar integrated circuit and method |
-
1975
- 1975-06-20 US US05/588,918 patent/US4005469A/en not_active Expired - Lifetime
-
1976
- 1976-04-12 IT IT22177/76A patent/IT1064219B/it active
- 1976-05-06 GB GB18558/76A patent/GB1516034A/en not_active Expired
- 1976-05-06 FR FR7614187A patent/FR2315171A1/fr active Granted
- 1976-05-15 DE DE19762621791 patent/DE2621791A1/de not_active Withdrawn
- 1976-05-19 JP JP51056774A patent/JPS522288A/ja active Granted
- 1976-06-16 CA CA255,056A patent/CA1041226A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2315171B1 (enExample) | 1978-11-17 |
| FR2315171A1 (fr) | 1977-01-14 |
| DE2621791A1 (de) | 1976-12-30 |
| GB1516034A (en) | 1978-06-28 |
| JPS5724935B2 (enExample) | 1982-05-26 |
| US4005469A (en) | 1977-01-25 |
| IT1064219B (it) | 1985-02-18 |
| JPS522288A (en) | 1977-01-08 |
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