CA1038329A - Method of selectively depositing glass on semiconductor devices - Google Patents

Method of selectively depositing glass on semiconductor devices

Info

Publication number
CA1038329A
CA1038329A CA221,479A CA221479A CA1038329A CA 1038329 A CA1038329 A CA 1038329A CA 221479 A CA221479 A CA 221479A CA 1038329 A CA1038329 A CA 1038329A
Authority
CA
Canada
Prior art keywords
glass
insulating material
areas
coated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA221,479A
Other languages
English (en)
French (fr)
Inventor
Robert B. Comizzoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1038329A publication Critical patent/CA1038329A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6342—
    • H10P14/6506—
    • H10P14/6512—
    • H10P14/662—
    • H10P14/69215—
    • H10P14/6928—
    • H10P14/6929—
    • H10P14/6936—
    • H10P14/69433—
    • H10W74/01—
    • H10W74/131—
    • H10W74/134—
    • H10W74/147—
    • H10W74/43—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H10P14/69391—

Landscapes

  • Formation Of Insulating Films (AREA)
CA221,479A 1974-04-19 1975-03-05 Method of selectively depositing glass on semiconductor devices Expired CA1038329A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US462492A US3895127A (en) 1974-04-19 1974-04-19 Method of selectively depositing glass on semiconductor devices

Publications (1)

Publication Number Publication Date
CA1038329A true CA1038329A (en) 1978-09-12

Family

ID=23836608

Family Applications (1)

Application Number Title Priority Date Filing Date
CA221,479A Expired CA1038329A (en) 1974-04-19 1975-03-05 Method of selectively depositing glass on semiconductor devices

Country Status (13)

Country Link
US (1) US3895127A (enExample)
JP (1) JPS5760773B2 (enExample)
BE (1) BE826941A (enExample)
BR (1) BR7501335A (enExample)
CA (1) CA1038329A (enExample)
DE (1) DE2513945A1 (enExample)
FR (1) FR2268357B1 (enExample)
GB (1) GB1464682A (enExample)
IN (1) IN143919B (enExample)
IT (1) IT1044487B (enExample)
NL (1) NL7503711A (enExample)
SE (1) SE407427B (enExample)
YU (1) YU77175A (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500492A (nl) * 1975-01-16 1976-07-20 Philips Nv Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.
JPS5393783A (en) * 1977-01-26 1978-08-17 Nec Home Electronics Ltd Mesa type semiconductor device
IN147578B (enExample) * 1977-02-24 1980-04-19 Rca Corp
IN147572B (enExample) * 1977-02-24 1980-04-19 Rca Corp
DE2739762C2 (de) * 1977-09-03 1982-12-02 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zur Passivierung von Halbleiterkörpern
US4218493A (en) * 1977-12-02 1980-08-19 The Continental Group, Inc. Electrostatic repair coating
US4235645A (en) * 1978-12-15 1980-11-25 Westinghouse Electric Corp. Process for forming glass-sealed multichip semiconductor devices
FR2466859A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de sillonnage et de glassivation par masquage au nitrure de silicium et composants semi-conducteurs obtenus
US4296370A (en) * 1979-10-11 1981-10-20 Rca Corporation Method of detecting a thin insulating film over a conductor
DE3138340C2 (de) * 1981-09-26 1987-01-29 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen von mehreren planaren Bauelementen
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices
DE3373594D1 (en) * 1982-12-22 1987-10-15 Nec Corp Method of producing electrostrictive effect element
US5342563A (en) * 1991-11-22 1994-08-30 The Lubrizol Corporation Methods of preparing sintered shapes and green bodies used therein
US5268233A (en) * 1991-11-22 1993-12-07 The Lubrizol Corporation Methods of preparing sintered shapes and green shapes used therein
US6780491B1 (en) * 1996-12-12 2004-08-24 Micron Technology, Inc. Microstructures including hydrophilic particles
US6448190B1 (en) 1999-05-21 2002-09-10 Symetrix Corporation Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid
US6613695B2 (en) * 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US20030118947A1 (en) * 2001-12-04 2003-06-26 Primaxx, Inc. System and method for selective deposition of precursor material
US6945121B2 (en) 2002-12-04 2005-09-20 Kimberly, Clark Worldwide, Inc. Apparatus for simulating a dynamic force response
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2966429A (en) * 1956-08-31 1960-12-27 Gen Electric Method of and apparatus for making printed circuits
US3280019A (en) * 1963-07-03 1966-10-18 Ibm Method of selectively coating semiconductor chips
US3400000A (en) * 1965-05-17 1968-09-03 Du Pont Surface modified electrostatic enamel powders and method
US3629086A (en) * 1969-12-12 1971-12-21 Ford Motor Co Anodic deposition of ceramic frit with cationic envelope
US3642597A (en) * 1970-03-20 1972-02-15 Gen Electric Semiconductor passivating process
JPS5339442B2 (enExample) * 1972-03-02 1978-10-21
JPS551703B2 (enExample) * 1972-07-07 1980-01-16

Also Published As

Publication number Publication date
FR2268357B1 (enExample) 1979-03-09
BE826941A (fr) 1975-07-16
SE7502450L (sv) 1975-10-20
NL7503711A (nl) 1975-10-21
US3895127A (en) 1975-07-15
FR2268357A1 (enExample) 1975-11-14
DE2513945A1 (de) 1975-10-30
IN143919B (enExample) 1978-02-25
IT1044487B (it) 1980-03-20
BR7501335A (pt) 1976-03-09
SE407427B (sv) 1979-03-26
YU77175A (en) 1983-04-27
GB1464682A (en) 1977-02-16
JPS5760773B2 (enExample) 1982-12-21
JPS50137684A (enExample) 1975-10-31

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