IN147578B - - Google Patents

Info

Publication number
IN147578B
IN147578B IN3/CAL/78A IN3CA1978A IN147578B IN 147578 B IN147578 B IN 147578B IN 3CA1978 A IN3CA1978 A IN 3CA1978A IN 147578 B IN147578 B IN 147578B
Authority
IN
India
Application number
IN3/CAL/78A
Other languages
English (en)
Inventor
W A Hicinbothem
Ming Liang Tarng
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IN147578B publication Critical patent/IN147578B/en

Links

Classifications

    • H10P14/662
    • H10P14/69215
    • H10P14/69433
    • H10P95/00
    • H10W74/01
    • H10W74/137
    • H10P14/69391
IN3/CAL/78A 1977-02-24 1978-01-02 IN147578B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77174977A 1977-02-24 1977-02-24

Publications (1)

Publication Number Publication Date
IN147578B true IN147578B (enExample) 1980-04-19

Family

ID=25092854

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3/CAL/78A IN147578B (enExample) 1977-02-24 1978-01-02

Country Status (10)

Country Link
JP (1) JPS53105979A (enExample)
BE (1) BE864271A (enExample)
DE (1) DE2806492A1 (enExample)
FR (1) FR2382095B1 (enExample)
GB (1) GB1552760A (enExample)
IN (1) IN147578B (enExample)
IT (1) IT1092729B (enExample)
PL (1) PL117841B1 (enExample)
SE (1) SE7801092L (enExample)
YU (1) YU42276B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS60208886A (ja) * 1984-03-31 1985-10-21 株式会社東芝 電子部品の製造方法
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1250099A (enExample) * 1969-04-14 1971-10-20
JPS532552B2 (enExample) * 1974-03-30 1978-01-28
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
NL7500492A (nl) * 1975-01-16 1976-07-20 Philips Nv Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
BE864271A (fr) 1978-06-16
YU19278A (en) 1982-06-30
FR2382095A1 (fr) 1978-09-22
IT7819175A0 (it) 1978-01-11
GB1552760A (en) 1979-09-19
FR2382095B1 (fr) 1985-10-18
DE2806492A1 (de) 1978-08-31
JPS5626981B2 (enExample) 1981-06-22
JPS53105979A (en) 1978-09-14
SE7801092L (sv) 1978-08-25
PL117841B1 (en) 1981-08-31
IT1092729B (it) 1985-07-12
PL204821A1 (pl) 1978-11-06
YU42276B (en) 1988-08-31

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