IN147572B - - Google Patents

Info

Publication number
IN147572B
IN147572B IN2/CAL/78A IN2CA1978A IN147572B IN 147572 B IN147572 B IN 147572B IN 2CA1978 A IN2CA1978 A IN 2CA1978A IN 147572 B IN147572 B IN 147572B
Authority
IN
India
Application number
IN2/CAL/78A
Other languages
English (en)
Inventor
R Denning
F P Jones
M A Spak
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IN147572B publication Critical patent/IN147572B/en

Links

Classifications

    • H10P95/00
    • H10W74/01
    • H10W74/137
    • H10W74/43
    • H10W74/481
    • H10P14/662
    • H10P14/69215
    • H10P14/69391
IN2/CAL/78A 1977-02-24 1978-01-02 IN147572B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77168177A 1977-02-24 1977-02-24

Publications (1)

Publication Number Publication Date
IN147572B true IN147572B (enExample) 1980-04-19

Family

ID=25092625

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2/CAL/78A IN147572B (enExample) 1977-02-24 1978-01-02

Country Status (10)

Country Link
JP (1) JPS53105978A (enExample)
BE (1) BE864270A (enExample)
DE (1) DE2806493A1 (enExample)
FR (1) FR2382094B1 (enExample)
GB (1) GB1552759A (enExample)
IN (1) IN147572B (enExample)
IT (1) IT1091594B (enExample)
PL (1) PL116754B1 (enExample)
SE (1) SE7801091L (enExample)
YU (1) YU14978A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS6312166U (enExample) * 1986-07-08 1988-01-26
CA1339817C (en) * 1989-05-31 1998-04-14 Mitel Corporation Curing and passivation of spin-on-glasses by a plasma process, and product produced thereby
JPH0316373U (enExample) * 1989-06-28 1991-02-19

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1274736C2 (de) * 1964-12-03 1974-02-07 Verfahren zur herstellung einer halbleitervorrichtung
GB1250099A (enExample) * 1969-04-14 1971-10-20
JPS532552B2 (enExample) * 1974-03-30 1978-01-28
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
NL7500492A (nl) * 1975-01-16 1976-07-20 Philips Nv Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices

Also Published As

Publication number Publication date
SE7801091L (sv) 1978-08-25
JPS53105978A (en) 1978-09-14
IT1091594B (it) 1985-07-06
FR2382094B1 (fr) 1985-07-19
PL204820A1 (pl) 1978-11-06
YU14978A (en) 1982-10-31
DE2806493A1 (de) 1978-08-31
FR2382094A1 (fr) 1978-09-22
GB1552759A (en) 1979-09-19
IT7819030A0 (it) 1978-01-04
PL116754B1 (en) 1981-06-30
BE864270A (fr) 1978-06-16
JPS5626980B2 (enExample) 1981-06-22

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