GB1552759A - Passivating a pn junction surface intercept - Google Patents
Passivating a pn junction surface interceptInfo
- Publication number
- GB1552759A GB1552759A GB6178/78A GB617878A GB1552759A GB 1552759 A GB1552759 A GB 1552759A GB 6178/78 A GB6178/78 A GB 6178/78A GB 617878 A GB617878 A GB 617878A GB 1552759 A GB1552759 A GB 1552759A
- Authority
- GB
- United Kingdom
- Prior art keywords
- passivating
- junction surface
- surface intercept
- intercept
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/481—Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77168177A | 1977-02-24 | 1977-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1552759A true GB1552759A (en) | 1979-09-19 |
Family
ID=25092625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6178/78A Expired GB1552759A (en) | 1977-02-24 | 1978-02-16 | Passivating a pn junction surface intercept |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS53105978A (enExample) |
| BE (1) | BE864270A (enExample) |
| DE (1) | DE2806493A1 (enExample) |
| FR (1) | FR2382094B1 (enExample) |
| GB (1) | GB1552759A (enExample) |
| IN (1) | IN147572B (enExample) |
| IT (1) | IT1091594B (enExample) |
| PL (1) | PL116754B1 (enExample) |
| SE (1) | SE7801091L (enExample) |
| YU (1) | YU14978A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4344985A (en) | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
| US4420765A (en) | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
| DE4013449A1 (de) * | 1989-05-31 | 1990-12-06 | Mitel Corp | Verfahren zur herstellung von isolierschichten und integrierten schaltkreisen |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6312166U (enExample) * | 1986-07-08 | 1988-01-26 | ||
| JPH0316373U (enExample) * | 1989-06-28 | 1991-02-19 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1274736C2 (de) * | 1964-12-03 | 1974-02-07 | Verfahren zur herstellung einer halbleitervorrichtung | |
| GB1250099A (enExample) * | 1969-04-14 | 1971-10-20 | ||
| JPS532552B2 (enExample) * | 1974-03-30 | 1978-01-28 | ||
| US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
| NL7500492A (nl) * | 1975-01-16 | 1976-07-20 | Philips Nv | Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze. |
| US4007476A (en) * | 1975-04-21 | 1977-02-08 | Hutson Jearld L | Technique for passivating semiconductor devices |
-
1978
- 1978-01-02 IN IN2/CAL/78A patent/IN147572B/en unknown
- 1978-01-04 IT IT19030/78A patent/IT1091594B/it active
- 1978-01-23 YU YU00149/78A patent/YU14978A/xx unknown
- 1978-01-30 SE SE7801091A patent/SE7801091L/xx unknown
- 1978-02-16 DE DE19782806493 patent/DE2806493A1/de not_active Ceased
- 1978-02-16 GB GB6178/78A patent/GB1552759A/en not_active Expired
- 1978-02-17 FR FR7804586A patent/FR2382094B1/fr not_active Expired
- 1978-02-21 JP JP1960078A patent/JPS53105978A/ja active Granted
- 1978-02-22 PL PL1978204820A patent/PL116754B1/pl unknown
- 1978-02-23 BE BE185438A patent/BE864270A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4344985A (en) | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
| US4420765A (en) | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
| DE4013449A1 (de) * | 1989-05-31 | 1990-12-06 | Mitel Corp | Verfahren zur herstellung von isolierschichten und integrierten schaltkreisen |
Also Published As
| Publication number | Publication date |
|---|---|
| YU14978A (en) | 1982-10-31 |
| FR2382094A1 (fr) | 1978-09-22 |
| PL116754B1 (en) | 1981-06-30 |
| BE864270A (fr) | 1978-06-16 |
| PL204820A1 (pl) | 1978-11-06 |
| JPS53105978A (en) | 1978-09-14 |
| FR2382094B1 (fr) | 1985-07-19 |
| JPS5626980B2 (enExample) | 1981-06-22 |
| IT7819030A0 (it) | 1978-01-04 |
| IN147572B (enExample) | 1980-04-19 |
| SE7801091L (sv) | 1978-08-25 |
| IT1091594B (it) | 1985-07-06 |
| DE2806493A1 (de) | 1978-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19980215 |