CA1018872A - Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions - Google Patents

Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions

Info

Publication number
CA1018872A
CA1018872A CA185,515A CA185515A CA1018872A CA 1018872 A CA1018872 A CA 1018872A CA 185515 A CA185515 A CA 185515A CA 1018872 A CA1018872 A CA 1018872A
Authority
CA
Canada
Prior art keywords
semi
liquid phase
epitaxial growth
conducting material
phase epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA185,515A
Other languages
English (en)
Other versions
CA185515S (en
Inventor
Hans-Jorg Scheel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1018872A publication Critical patent/CA1018872A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA185,515A 1972-11-20 1973-11-09 Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions Expired CA1018872A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1685072A CH541353A (de) 1972-11-20 1972-11-20 Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen

Publications (1)

Publication Number Publication Date
CA1018872A true CA1018872A (en) 1977-10-11

Family

ID=4420756

Family Applications (1)

Application Number Title Priority Date Filing Date
CA185,515A Expired CA1018872A (en) 1972-11-20 1973-11-09 Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions

Country Status (6)

Country Link
US (1) US3858553A (cs)
JP (1) JPS5421071B2 (cs)
CA (1) CA1018872A (cs)
CH (1) CH541353A (cs)
DE (1) DE2357230C3 (cs)
GB (1) GB1447380A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3948211A (en) * 1975-04-08 1976-04-06 July Nikolaevich Griboedov Plant for chromizing metal articles
JPH04299828A (ja) * 1991-03-28 1992-10-23 Shin Etsu Handotai Co Ltd 半導体基板処理装置
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
US6902619B2 (en) * 2001-06-28 2005-06-07 Ntu Ventures Pte. Ltd. Liquid phase epitaxy
KR101167732B1 (ko) * 2003-03-17 2012-07-23 오사카 유니버시티 Ⅲ족 원소 질화물 단결정의 제조 방법 및 이것에 이용하는장치
CN115074820B (zh) * 2022-06-17 2023-07-18 哈尔滨工业大学 一种单晶rig厚膜的双坩埚液相外延制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US553547A (en) * 1896-01-28 Half to samuel mawhinney
US2042559A (en) * 1933-11-17 1936-06-02 United Shoe Machinery Corp Conditioning device
CH532959A (de) * 1967-10-20 1973-01-31 Philips Nv Verfahren zum Kristallisieren einer binären Halbleiterverbindung
US3827399A (en) * 1968-09-27 1974-08-06 Matsushita Electric Industrial Co Ltd Apparatus for epitaxial growth from the liquid state
US3791344A (en) * 1969-09-11 1974-02-12 Licentia Gmbh Apparatus for liquid phase epitaxy
US3589336A (en) * 1969-12-29 1971-06-29 Bell Telephone Labor Inc Horizontal liquid phase epitaxy apparatus
US3692592A (en) * 1970-02-12 1972-09-19 Rca Corp Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
JPS53271B1 (cs) * 1971-03-05 1978-01-06

Also Published As

Publication number Publication date
CH541353A (de) 1973-09-15
DE2357230B2 (de) 1981-02-12
GB1447380A (en) 1976-08-25
JPS5421071B2 (cs) 1979-07-27
US3858553A (en) 1975-01-07
DE2357230A1 (de) 1974-05-30
DE2357230C3 (de) 1981-10-29
JPS4984178A (cs) 1974-08-13

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