CA978452A - Growing of liquid phase epitaxial layers - Google Patents

Growing of liquid phase epitaxial layers

Info

Publication number
CA978452A
CA978452A CA174,075A CA174075A CA978452A CA 978452 A CA978452 A CA 978452A CA 174075 A CA174075 A CA 174075A CA 978452 A CA978452 A CA 978452A
Authority
CA
Canada
Prior art keywords
growing
liquid phase
epitaxial layers
phase epitaxial
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA174,075A
Other versions
CA174075S (en
Inventor
Anthony J. Springthorpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Technology Corp
Original Assignee
Bell Northern Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Northern Research Ltd filed Critical Bell Northern Research Ltd
Priority to CA174,075A priority Critical patent/CA978452A/en
Application granted granted Critical
Publication of CA978452A publication Critical patent/CA978452A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
CA174,075A 1973-06-14 1973-06-14 Growing of liquid phase epitaxial layers Expired CA978452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA174,075A CA978452A (en) 1973-06-14 1973-06-14 Growing of liquid phase epitaxial layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA174,075A CA978452A (en) 1973-06-14 1973-06-14 Growing of liquid phase epitaxial layers

Publications (1)

Publication Number Publication Date
CA978452A true CA978452A (en) 1975-11-25

Family

ID=4097014

Family Applications (1)

Application Number Title Priority Date Filing Date
CA174,075A Expired CA978452A (en) 1973-06-14 1973-06-14 Growing of liquid phase epitaxial layers

Country Status (1)

Country Link
CA (1) CA978452A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567920A1 (en) * 1984-07-23 1986-01-24 Int Standard Electric Corp SYSTEM FOR PRODUCING LAYERED STRUCTURES OF SEMICONDUCTOR MATERIAL

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567920A1 (en) * 1984-07-23 1986-01-24 Int Standard Electric Corp SYSTEM FOR PRODUCING LAYERED STRUCTURES OF SEMICONDUCTOR MATERIAL

Similar Documents

Publication Publication Date Title
CA990186A (en) Method of depositing epitaxial semiconductor layers from the liquid phase
CA1010331A (en) Structure of warmer
CA958543A (en) Growing of grasses
CA1025334A (en) Dual growth rate method of depositing epitaxial crystalline layers
CA968674A (en) Method of depositing an epitaxial semiconductor layer from the liquid phase
CA995022A (en) Phase separator for cryogenic fluid
CA1005558A (en) Fabrication of liquid crystal devices
CA1035792A (en) Preparation of 5-sec-alkyl-m-cresol
AU502974B2 (en) Preparation of granulates
CA1026217A (en) Method of and device for growing epitaxial layers from the liquid phase
CA1006053A (en) Grass growing
CA1022439A (en) Method of depositing epitaxial layers on a substrate from the liquid phase
CA993964A (en) Digitally controlled phase shifter
AU470647B2 (en) Phase demodular
AU4566672A (en) Method of epitaxially depositing ternary iii-v compounds from the liquid phase
CA978452A (en) Growing of liquid phase epitaxial layers
CA1018872A (en) Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions
IT1025632B (en) LIQUID PHASE EPITAXIAL GROWTH METHOD
CA956868A (en) Growing of liquid phase epitaxial layers
AU488274B2 (en) Method of and device for growing epitaxial layers from the liquid phase
CA1019773A (en) Process for the dimerization of cyclopentenes
CA1022265A (en) Liquid crystal phase transformation system
CA1026653A (en) Growth of synthetic diamonds
CA1014003A (en) Method of preparing improved liquid shortenings
CA1012144A (en) Synthesis for the preparation of 3-hydroxy-n-alkylisomorphinans