CA956868A - Growing of liquid phase epitaxial layers - Google Patents
Growing of liquid phase epitaxial layersInfo
- Publication number
- CA956868A CA956868A CA956868A CA956868DA CA956868A CA 956868 A CA956868 A CA 956868A CA 956868 A CA956868 A CA 956868A CA 956868D A CA956868D A CA 956868DA CA 956868 A CA956868 A CA 956868A
- Authority
- CA
- Canada
- Prior art keywords
- growing
- liquid phase
- epitaxial layers
- phase epitaxial
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA156239 | 1972-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA956868A true CA956868A (en) | 1974-10-29 |
Family
ID=4094952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA956868A Expired CA956868A (en) | 1972-11-10 | 1972-11-10 | Growing of liquid phase epitaxial layers |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA956868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7799133B2 (en) * | 2005-05-02 | 2010-09-21 | Iis Materials Corporation, Ltd. | Crucible apparatus and method of solidifying a molten material |
-
1972
- 1972-11-10 CA CA956868A patent/CA956868A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7799133B2 (en) * | 2005-05-02 | 2010-09-21 | Iis Materials Corporation, Ltd. | Crucible apparatus and method of solidifying a molten material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA990186A (en) | Method of depositing epitaxial semiconductor layers from the liquid phase | |
| CA958543A (en) | Growing of grasses | |
| CA968674A (en) | Method of depositing an epitaxial semiconductor layer from the liquid phase | |
| CA1033727A (en) | Preparation of w-pentanorprostaglandins | |
| CA995242A (en) | Liquid crystalline schiff bases | |
| CA1005044A (en) | Preparation of synthetic hydrocarbon | |
| CA1026217A (en) | Method of and device for growing epitaxial layers from the liquid phase | |
| CA959739A (en) | Controlled epitaxial growth from supercooled nutrient-flux solution | |
| CA1020554A (en) | Preparation of thiocarbamylsulfenamides | |
| CA993949A (en) | Phase converter | |
| CA1002433A (en) | Monocrystals of iii-v semiconductor compounds | |
| CA985383A (en) | Wide frequency range phase shifter device | |
| CA1018872A (en) | Apparatus for the epitaxial growth of semi-conducting material by liquid phase epitaxy from at least two source solutions | |
| CA956868A (en) | Growing of liquid phase epitaxial layers | |
| CA978452A (en) | Growing of liquid phase epitaxial layers | |
| CA997377A (en) | Isomerization of isopropyl naphthalene | |
| AU474600B2 (en) | Phase shift tremulant system | |
| CA958968A (en) | Growing of epitaxial layers on substrates | |
| AU488274B2 (en) | Method of and device for growing epitaxial layers from the liquid phase | |
| CA904450A (en) | Method of manufacturing semiconductor elements by liquid phase growing method | |
| CA900321A (en) | Production of epitaxial films | |
| CA902258A (en) | Horizontal liquid phase epitaxy apparatus | |
| CA901956A (en) | Horizontal liquid phase crystal growth apparatus | |
| CA860899A (en) | Depositing successive epitaxial semiconductive layers from the liquid phase | |
| CA894736A (en) | Substrates for the growth of semiconductor layers |