BRPI0411591A - método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino - Google Patents
método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme finoInfo
- Publication number
- BRPI0411591A BRPI0411591A BRPI0411591-0A BRPI0411591A BRPI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A
- Authority
- BR
- Brazil
- Prior art keywords
- film electronic
- conductive layer
- thin film
- electronic components
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000010409 thin film Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000004049 embossing Methods 0.000 abstract 3
- 238000003754 machining Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
"MéTODO E APARELHO PARA FABRICAR COMPONENTES ELETRÈNICOS DE FILME FINO, E, COMPONENTE ELETRÈNICO DE FILME FINO". A invenção relaciona-se a um método para fabricar um componente eletrónico de filme fino e um aparelho implementando o método. A invenção relaciona-se também a um componente eletrónico de filme fino fabricado de acordo com o método. Uma camada condutora galvanicamente uniforme, mais inferior, de material eletricamente condutor é primeiramente formada em um substrato substancialmente dielétrico, a partir do qual as áreas condutoras da camada condutora mais inferior são galvanicamente separadas umas das outras para formar uma configuração de eletrodo. No topo da citada configuração de eletrodo é então possível formar uma ou várias camadas superiores passivas ou ativas requeridas no componente de filme fino. De acordo com a invenção, a separação da citada camada condutora mais inferior em uma configuração de eletrodo tem lugar exercendo, na camada condutora mais inferior, uma operação de usinagem baseada em gravação em relevo por corte por matriz, isto é, gravação em relevo, onde o relevo do elemento de usinagem usado na operação de usinagem causa uma deformação permanente no substrato e ao mesmo tempo grava em relevo áreas da camada condutora em áreas condutoras galvanicamente separadas umas das outras. A invenção e adequada para fabricar componentes de filme fino em um processo de cilindro a cilindro.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20030919A FI20030919A (fi) | 2003-06-19 | 2003-06-19 | Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti |
PCT/FI2004/050098 WO2004111729A1 (en) | 2003-06-19 | 2004-06-18 | A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0411591A true BRPI0411591A (pt) | 2006-08-29 |
Family
ID=8566276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0411591-0A BRPI0411591A (pt) | 2003-06-19 | 2004-06-18 | método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino |
Country Status (9)
Country | Link |
---|---|
US (1) | US20080012151A1 (pt) |
EP (1) | EP1636652A1 (pt) |
JP (1) | JP2007527106A (pt) |
CN (1) | CN1836190A (pt) |
BR (1) | BRPI0411591A (pt) |
CA (1) | CA2529329A1 (pt) |
FI (1) | FI20030919A (pt) |
RU (1) | RU2006101405A (pt) |
WO (1) | WO2004111729A1 (pt) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005018984A1 (de) * | 2005-04-22 | 2006-11-02 | Steiner Gmbh & Co. Kg | Verfahren und Vorrichtung zum Herstellen von elektronischen Bauteilen |
JP4506605B2 (ja) * | 2005-07-28 | 2010-07-21 | ソニー株式会社 | 半導体装置の製造方法 |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
GB0523163D0 (en) * | 2005-11-14 | 2005-12-21 | Suisse Electronique Microtech | Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack |
US9174400B2 (en) * | 2006-02-15 | 2015-11-03 | Osram Opto Semiconductors Gmbh | Method for producing structures in optoelectronic components and device for this purpose |
DE102006047388A1 (de) | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
GB2448730A (en) * | 2007-04-25 | 2008-10-29 | Innos Ltd | Fabrication of Planar Electronic Circuit Devices |
WO2008140425A1 (en) * | 2007-05-14 | 2008-11-20 | Nanyang Technological University | Embossing printing for fabrication of organic field effect transistors and its integrated devices |
JP5319910B2 (ja) * | 2007-11-07 | 2013-10-16 | コバレントマテリアル株式会社 | 導電性パターンの埋設形成方法、積層基板の製造方法及び微細流路構造体の製造方法 |
PT103951A (pt) * | 2008-01-31 | 2009-07-31 | Univ Nova De Lisboa | Processamento de elementos eléctricos e/ou electrónicos em substratos de material celulósico |
WO2009101862A1 (ja) * | 2008-02-12 | 2009-08-20 | Konica Minolta Holdings, Inc. | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
PT103999B (pt) * | 2008-03-20 | 2012-11-16 | Univ Nova De Lisboa | Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem |
WO2009134697A2 (en) * | 2008-04-30 | 2009-11-05 | Applied Materials, Inc. | Roll to roll oled production system |
JP2010237375A (ja) * | 2009-03-31 | 2010-10-21 | Mitsui Chemicals Inc | 微細構造体およびそれを用いた光学素子 |
WO2010119395A1 (en) * | 2009-04-17 | 2010-10-21 | Koninklijke Philips Electronics N.V. | Transparent oled device with high intensity |
WO2010132613A2 (en) * | 2009-05-13 | 2010-11-18 | The Regents Of The University Of California | High resolution light emitting devices |
EP2287666B1 (de) * | 2009-08-22 | 2012-06-27 | EV Group E. Thallner GmbH | Vorrichtung zum Prägen von Substraten |
WO2011097585A1 (en) * | 2010-02-05 | 2011-08-11 | Energy Focus, Inc. | Method of making an arrangement for collecting or emitting light |
CN102159032B (zh) * | 2011-03-25 | 2013-06-19 | 罗小亚 | 一种采用模切机制造挠性印刷线路板的工艺方法 |
CN103534204A (zh) * | 2011-03-29 | 2014-01-22 | 国立大学法人蔚山科学技术大学校产学协力团 | 石墨烯片,包含石墨烯片的透明电极、有源层以及使用透明电极的显示器、电子装置、光电子装置、电池、太阳能电池和染料敏化太阳能电池 |
JP5725614B2 (ja) | 2011-08-04 | 2015-05-27 | 国立大学法人大阪大学 | 有機トランジスタ及びその製造方法 |
WO2013126698A2 (en) * | 2012-02-22 | 2013-08-29 | Massachusetts Institute Of Technology | Flexible high-voltage thin film transistors |
US20150218394A1 (en) * | 2012-08-07 | 2015-08-06 | Lg Chem, Ltd. | Printed matter and method for manufacturing such printed matter |
US10040018B2 (en) | 2013-01-09 | 2018-08-07 | Imagine Tf, Llc | Fluid filters and methods of use |
CN103682155A (zh) * | 2013-12-10 | 2014-03-26 | 京东方科技集团股份有限公司 | 有机电致发光显示器件、其光学薄膜层叠体及制备方法 |
US9861920B1 (en) | 2015-05-01 | 2018-01-09 | Imagine Tf, Llc | Three dimensional nanometer filters and methods of use |
GB2526316B (en) * | 2014-05-20 | 2018-10-31 | Flexenable Ltd | Production of transistor arrays |
US10730047B2 (en) | 2014-06-24 | 2020-08-04 | Imagine Tf, Llc | Micro-channel fluid filters and methods of use |
JP2016046404A (ja) * | 2014-08-25 | 2016-04-04 | 欣永立企業有限公司 | タッチパネル用導電電極の製造方法及びその構造 |
US10124275B2 (en) | 2014-09-05 | 2018-11-13 | Imagine Tf, Llc | Microstructure separation filters |
JP6273374B2 (ja) * | 2014-09-18 | 2018-01-31 | 富士フイルム株式会社 | トランジスタ、および、トランジスタの製造方法 |
US9461192B2 (en) | 2014-12-16 | 2016-10-04 | Sunpower Corporation | Thick damage buffer for foil-based metallization of solar cells |
US10758849B2 (en) | 2015-02-18 | 2020-09-01 | Imagine Tf, Llc | Three dimensional filter devices and apparatuses |
US10118842B2 (en) | 2015-07-09 | 2018-11-06 | Imagine Tf, Llc | Deionizing fluid filter devices and methods of use |
US10479046B2 (en) | 2015-08-19 | 2019-11-19 | Imagine Tf, Llc | Absorbent microstructure arrays and methods of use |
WO2017201602A1 (en) * | 2015-09-11 | 2017-11-30 | Spectral Devices Inc. | Methods for production and transfer of patterned thin films at wafer-scale |
KR102054190B1 (ko) * | 2017-01-23 | 2019-12-10 | 동우 화인켐 주식회사 | 고성능 필름형 터치 센서 및 그 제조방법 |
CN108538210A (zh) * | 2017-03-06 | 2018-09-14 | 浙江斯玛特信息科技有限公司 | 透明led全彩显示屏 |
CN108984885B (zh) * | 2018-07-05 | 2023-05-16 | 中国船舶工业集团公司第七0八研究所 | 一种基于许可永久变形下的装载甲板板设计方法 |
CN111525032A (zh) * | 2020-04-06 | 2020-08-11 | 杭州纤纳光电科技有限公司 | 一种二维网状背接触式钙钛矿太阳能电池及其制备方法 |
CN111525031A (zh) * | 2020-04-06 | 2020-08-11 | 杭州纤纳光电科技有限公司 | 一种钙钛矿的三结叠层太阳能电池及其制备方法 |
CN113745366B (zh) * | 2020-05-14 | 2024-03-12 | 杭州纤纳光电科技有限公司 | 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356627A (en) * | 1980-02-04 | 1982-11-02 | Amp Incorporated | Method of making circuit path conductors in plural planes |
US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
DE60118843T2 (de) * | 2000-02-07 | 2006-11-30 | Koninklijke Philips Electronics N.V. | Stempel für ein lithographisches verfahren, methode zur stempelherstellung und methode zur herstellung einer gemusterten schicht auf einem substrat |
AU2001238459A1 (en) * | 2000-02-16 | 2001-08-27 | Omlidon Technologies Llc | Method for microstructuring polymer-supported materials |
GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
-
2003
- 2003-06-19 FI FI20030919A patent/FI20030919A/fi not_active Application Discontinuation
-
2004
- 2004-06-18 RU RU2006101405/04A patent/RU2006101405A/ru not_active Application Discontinuation
- 2004-06-18 EP EP04742248A patent/EP1636652A1/en not_active Withdrawn
- 2004-06-18 CN CNA200480023159XA patent/CN1836190A/zh active Pending
- 2004-06-18 JP JP2006516250A patent/JP2007527106A/ja active Pending
- 2004-06-18 CA CA002529329A patent/CA2529329A1/en not_active Abandoned
- 2004-06-18 WO PCT/FI2004/050098 patent/WO2004111729A1/en active Application Filing
- 2004-06-18 US US10/561,225 patent/US20080012151A1/en not_active Abandoned
- 2004-06-18 BR BRPI0411591-0A patent/BRPI0411591A/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FI20030919A0 (fi) | 2003-06-19 |
EP1636652A1 (en) | 2006-03-22 |
WO2004111729A1 (en) | 2004-12-23 |
RU2006101405A (ru) | 2006-06-27 |
JP2007527106A (ja) | 2007-09-20 |
CN1836190A (zh) | 2006-09-20 |
US20080012151A1 (en) | 2008-01-17 |
FI20030919A (fi) | 2004-12-20 |
CA2529329A1 (en) | 2004-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE AS 4A, 5A, 6A, 7A E 8A ANUIDADES. |
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B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
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