FI20030919A0 - Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti - Google Patents

Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti

Info

Publication number
FI20030919A0
FI20030919A0 FI20030919A FI20030919A FI20030919A0 FI 20030919 A0 FI20030919 A0 FI 20030919A0 FI 20030919 A FI20030919 A FI 20030919A FI 20030919 A FI20030919 A FI 20030919A FI 20030919 A0 FI20030919 A0 FI 20030919A0
Authority
FI
Finland
Prior art keywords
thin film
film component
electronic thin
manufacturing
electronic
Prior art date
Application number
FI20030919A
Other languages
English (en)
Swedish (sv)
Other versions
FI20030919A (fi
Inventor
Antti Kemppainen
Terho Kololuoma
Markus Tuomikoski
Raimo Korhonen
Pasi Laakkonen
Pekka Koivukunnas
Original Assignee
Metso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metso Corp filed Critical Metso Corp
Priority to FI20030919A priority Critical patent/FI20030919A/fi
Publication of FI20030919A0 publication Critical patent/FI20030919A0/fi
Priority to CNA200480023159XA priority patent/CN1836190A/zh
Priority to JP2006516250A priority patent/JP2007527106A/ja
Priority to CA002529329A priority patent/CA2529329A1/en
Priority to EP04742248A priority patent/EP1636652A1/en
Priority to PCT/FI2004/050098 priority patent/WO2004111729A1/en
Priority to RU2006101405/04A priority patent/RU2006101405A/ru
Priority to BRPI0411591-0A priority patent/BRPI0411591A/pt
Priority to US10/561,225 priority patent/US20080012151A1/en
Publication of FI20030919A publication Critical patent/FI20030919A/fi

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
FI20030919A 2003-06-19 2003-06-19 Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti FI20030919A (fi)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FI20030919A FI20030919A (fi) 2003-06-19 2003-06-19 Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti
CNA200480023159XA CN1836190A (zh) 2003-06-19 2004-06-18 用于制造电子薄膜元件的方法和设备以及电子薄膜元件
JP2006516250A JP2007527106A (ja) 2003-06-19 2004-06-18 薄膜電子部品の製造方法および製造装置ならびに薄膜電子部品
CA002529329A CA2529329A1 (en) 2003-06-19 2004-06-18 A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component
EP04742248A EP1636652A1 (en) 2003-06-19 2004-06-18 A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component
PCT/FI2004/050098 WO2004111729A1 (en) 2003-06-19 2004-06-18 A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component
RU2006101405/04A RU2006101405A (ru) 2003-06-19 2004-06-18 Способ и устройство для изготовления электронного тонкопленочного элемента и электронный тонкопленочный элемент
BRPI0411591-0A BRPI0411591A (pt) 2003-06-19 2004-06-18 método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino
US10/561,225 US20080012151A1 (en) 2003-06-19 2004-06-18 Method and an Apparatus for Manufacturing an Electronic Thin-Film Component and an Electronic Thin-Film Component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20030919A FI20030919A (fi) 2003-06-19 2003-06-19 Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti

Publications (2)

Publication Number Publication Date
FI20030919A0 true FI20030919A0 (fi) 2003-06-19
FI20030919A FI20030919A (fi) 2004-12-20

Family

ID=8566276

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20030919A FI20030919A (fi) 2003-06-19 2003-06-19 Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti

Country Status (9)

Country Link
US (1) US20080012151A1 (fi)
EP (1) EP1636652A1 (fi)
JP (1) JP2007527106A (fi)
CN (1) CN1836190A (fi)
BR (1) BRPI0411591A (fi)
CA (1) CA2529329A1 (fi)
FI (1) FI20030919A (fi)
RU (1) RU2006101405A (fi)
WO (1) WO2004111729A1 (fi)

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JP4506605B2 (ja) 2005-07-28 2010-07-21 ソニー株式会社 半導体装置の製造方法
DE102005035589A1 (de) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
GB0523163D0 (en) * 2005-11-14 2005-12-21 Suisse Electronique Microtech Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack
US9174400B2 (en) * 2006-02-15 2015-11-03 Osram Opto Semiconductors Gmbh Method for producing structures in optoelectronic components and device for this purpose
DE102006047388A1 (de) 2006-10-06 2008-04-17 Polyic Gmbh & Co. Kg Feldeffekttransistor sowie elektrische Schaltung
GB2448730A (en) * 2007-04-25 2008-10-29 Innos Ltd Fabrication of Planar Electronic Circuit Devices
WO2008140425A1 (en) * 2007-05-14 2008-11-20 Nanyang Technological University Embossing printing for fabrication of organic field effect transistors and its integrated devices
JP5319910B2 (ja) * 2007-11-07 2013-10-16 コバレントマテリアル株式会社 導電性パターンの埋設形成方法、積層基板の製造方法及び微細流路構造体の製造方法
PT103951A (pt) * 2008-01-31 2009-07-31 Univ Nova De Lisboa Processamento de elementos eléctricos e/ou electrónicos em substratos de material celulósico
EP2244302B1 (en) * 2008-02-12 2016-05-18 Konica Minolta Holdings, Inc. Method for forming an organic semiconductor layer and method for manufacturing an organic thin film transistor
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
WO2009134697A2 (en) * 2008-04-30 2009-11-05 Applied Materials, Inc. Roll to roll oled production system
JP2010237375A (ja) * 2009-03-31 2010-10-21 Mitsui Chemicals Inc 微細構造体およびそれを用いた光学素子
WO2010119395A1 (en) * 2009-04-17 2010-10-21 Koninklijke Philips Electronics N.V. Transparent oled device with high intensity
WO2010132613A2 (en) * 2009-05-13 2010-11-18 The Regents Of The University Of California High resolution light emitting devices
EP2287666B1 (de) * 2009-08-22 2012-06-27 EV Group E. Thallner GmbH Vorrichtung zum Prägen von Substraten
WO2011097585A1 (en) * 2010-02-05 2011-08-11 Energy Focus, Inc. Method of making an arrangement for collecting or emitting light
WO2012134161A2 (ko) * 2011-03-29 2012-10-04 국립대학법인 울산과학기술대학교 산학협력단 그라펜 시트, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 배터리, 태양전지 및 염료감응 태양전지
CN102159032B (zh) * 2011-03-25 2013-06-19 罗小亚 一种采用模切机制造挠性印刷线路板的工艺方法
JP5725614B2 (ja) * 2011-08-04 2015-05-27 国立大学法人大阪大学 有機トランジスタ及びその製造方法
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CN103682155A (zh) * 2013-12-10 2014-03-26 京东方科技集团股份有限公司 有机电致发光显示器件、其光学薄膜层叠体及制备方法
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JP2016046404A (ja) * 2014-08-25 2016-04-04 欣永立企業有限公司 タッチパネル用導電電極の製造方法及びその構造
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JP6273374B2 (ja) * 2014-09-18 2018-01-31 富士フイルム株式会社 トランジスタ、および、トランジスタの製造方法
US9461192B2 (en) * 2014-12-16 2016-10-04 Sunpower Corporation Thick damage buffer for foil-based metallization of solar cells
US10758849B2 (en) 2015-02-18 2020-09-01 Imagine Tf, Llc Three dimensional filter devices and apparatuses
US10118842B2 (en) 2015-07-09 2018-11-06 Imagine Tf, Llc Deionizing fluid filter devices and methods of use
US10479046B2 (en) 2015-08-19 2019-11-19 Imagine Tf, Llc Absorbent microstructure arrays and methods of use
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KR102054190B1 (ko) * 2017-01-23 2019-12-10 동우 화인켐 주식회사 고성능 필름형 터치 센서 및 그 제조방법
CN108538210A (zh) * 2017-03-06 2018-09-14 浙江斯玛特信息科技有限公司 透明led全彩显示屏
CN108984885B (zh) * 2018-07-05 2023-05-16 中国船舶工业集团公司第七0八研究所 一种基于许可永久变形下的装载甲板板设计方法
CN111525032A (zh) * 2020-04-06 2020-08-11 杭州纤纳光电科技有限公司 一种二维网状背接触式钙钛矿太阳能电池及其制备方法
CN111525031A (zh) * 2020-04-06 2020-08-11 杭州纤纳光电科技有限公司 一种钙钛矿的三结叠层太阳能电池及其制备方法
CN113745366B (zh) * 2020-05-14 2024-03-12 杭州纤纳光电科技有限公司 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法

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Also Published As

Publication number Publication date
BRPI0411591A (pt) 2006-08-29
FI20030919A (fi) 2004-12-20
EP1636652A1 (en) 2006-03-22
CN1836190A (zh) 2006-09-20
JP2007527106A (ja) 2007-09-20
US20080012151A1 (en) 2008-01-17
RU2006101405A (ru) 2006-06-27
CA2529329A1 (en) 2004-12-23
WO2004111729A1 (en) 2004-12-23

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