BRPI0407986A - dispositivo de armazenamento de carca elétrica com melhores caracterìsticas de potência - Google Patents

dispositivo de armazenamento de carca elétrica com melhores caracterìsticas de potência

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Publication number
BRPI0407986A
BRPI0407986A BRPI0407986-8A BRPI0407986A BRPI0407986A BR PI0407986 A BRPI0407986 A BR PI0407986A BR PI0407986 A BRPI0407986 A BR PI0407986A BR PI0407986 A BRPI0407986 A BR PI0407986A
Authority
BR
Brazil
Prior art keywords
storage device
charge storage
present
power characteristics
best power
Prior art date
Application number
BRPI0407986-8A
Other languages
English (en)
Inventor
William B Duff Jr
Original Assignee
William B Duff Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by William B Duff Jr filed Critical William B Duff Jr
Publication of BRPI0407986A publication Critical patent/BRPI0407986A/pt

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/0202—Dielectric layers for electrography
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
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    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
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    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/023—Porous and characterised by the material
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    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
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    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/0247—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the form
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Secondary Cells (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

"DISPOSITIVO DE ARMAZENAMENTO DE CARGA ELéTRICA COM MELHORES CARACTERìSTICAS DE POTêNCIA". A presente invenção diz respeito no geral a um dispositivo de armazenamento de carga elétrica (ECSD) com melhores características de potência. Mais particularmente, a presente invenção diz respeito à melhoria da densidade de corrente, tensão nominal, características de transferência de energia, resposta de freqüência e densidade de armazenamento de carga de vários dispositivos, tais como capacitores, baterias, células de combustível e outros dispositivos de armazenamento de carga elétrica. Por exemplo, um aspecto da presente invenção são os capacitores de estado sólido e eletrolíticos onde a área superficial do condutor é aumentada com estruturas lisas, reduzindo-se assim a distância que separa os condutores e melhorando-se as características dielétricas efetivas pelo emprego de técnicas de construção baseadas em níveis atómicos, moleculares e macroscópicos.
BRPI0407986-8A 2003-03-05 2004-03-04 dispositivo de armazenamento de carca elétrica com melhores caracterìsticas de potência BRPI0407986A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45226603P 2003-03-05 2003-03-05
PCT/US2004/006532 WO2004079793A2 (en) 2003-03-05 2004-03-04 Electrical charge storage device having enhanced power characteristics

Publications (1)

Publication Number Publication Date
BRPI0407986A true BRPI0407986A (pt) 2006-03-07

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ID=32962703

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0407986-8A BRPI0407986A (pt) 2003-03-05 2004-03-04 dispositivo de armazenamento de carca elétrica com melhores caracterìsticas de potência

Country Status (14)

Country Link
US (2) US7289312B2 (pt)
EP (1) EP1616360A4 (pt)
JP (1) JP2006523384A (pt)
KR (1) KR20050116809A (pt)
CN (1) CN1781201A (pt)
AU (1) AU2004216697A1 (pt)
BR (1) BRPI0407986A (pt)
CA (1) CA2518067A1 (pt)
MX (1) MXPA05009393A (pt)
NO (1) NO20054486L (pt)
RU (1) RU2005130532A (pt)
UA (1) UA82086C2 (pt)
WO (1) WO2004079793A2 (pt)
ZA (1) ZA200506419B (pt)

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CA2518067A1 (en) * 2003-03-05 2004-09-16 William B. Duff, Jr. Electrical charge storage device having enhanced power characteristics
DE10360892A1 (de) * 2003-12-19 2005-07-21 Robert Bosch Gmbh Verfahren und Vorrichtung zur Verschleisserfassung bei Steuergeräten
US20050225412A1 (en) * 2004-03-31 2005-10-13 Limcangco Naomi O Microelectromechanical switch with an arc reduction environment
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US7821771B2 (en) * 2008-04-11 2010-10-26 Northern Lights Semiconductor Corp. Apparatus for storing electrical energy
US8179203B2 (en) 2008-10-09 2012-05-15 The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration Wireless electrical device using open-circuit elements having no electrical connections
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
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