BR9814330A - Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo - Google Patents

Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo

Info

Publication number
BR9814330A
BR9814330A BR9814330-1A BR9814330A BR9814330A BR 9814330 A BR9814330 A BR 9814330A BR 9814330 A BR9814330 A BR 9814330A BR 9814330 A BR9814330 A BR 9814330A
Authority
BR
Brazil
Prior art keywords
field effect
effect transistor
circuit
polarize
power amplifier
Prior art date
Application number
BR9814330-1A
Other languages
English (en)
Inventor
Per-Olof Brandt
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of BR9814330A publication Critical patent/BR9814330A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)

Abstract

"CIRCUITO DE TRANSISTOR DE EFEITO DE CAMPO, AMPLIFICADOR DE POTêNCIA, E, PROCESSO PARA POLARIZAR UM TRANSISTOR DE EFEITO DE CAMPO"Um circuito de transistor de efeito de campo compreende um transistor de efeito de campo (1) tendo terminais de dreno (D) e fonte (S) para conexão aos trilhos da respectiva fonte de alimentação (Vss, 4) e um terminal de porta (G) para receber um sinal de entrada. O circuito compreende adicionalmente um diodo (6) que tem seu anodo (B) conectado ao terminal de porta (G) do transistor (1) e seu catodo para conexão a uma fonte de tensão de polarização (7, Vb). O diodo (6) é arranjado de tal modo que, quando o circuito está em uso, o nível de tensão do terminal de porta (G) do transistor de efeito de campo (1) é mantido em um nível predeterminado ou abaixo de um nível predeterminado.
BR9814330-1A 1997-12-22 1998-12-17 Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo BR9814330A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9726984A GB2332797B (en) 1997-12-22 1997-12-22 Low voltage transistor biasing
PCT/EP1998/008303 WO1999033168A1 (en) 1997-12-22 1998-12-17 Low voltage transistor biasing

Publications (1)

Publication Number Publication Date
BR9814330A true BR9814330A (pt) 2001-10-16

Family

ID=10823989

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9814330-1A BR9814330A (pt) 1997-12-22 1998-12-17 Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo

Country Status (7)

Country Link
US (1) US6255885B1 (pt)
EP (1) EP1042863A1 (pt)
CN (1) CN1283327A (pt)
AU (1) AU2414899A (pt)
BR (1) BR9814330A (pt)
GB (1) GB2332797B (pt)
WO (1) WO1999033168A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3107035B2 (ja) * 1998-03-18 2000-11-06 日本電気株式会社 低雑音増幅器及びその制御回路
US20020050851A1 (en) * 1999-12-22 2002-05-02 Grundlingh Johan M. Method and apparatus for biasing radio frequency power transistors
CN100407572C (zh) * 2004-08-02 2008-07-30 阎跃军 场效应管偏置电路
US7233205B2 (en) * 2005-03-11 2007-06-19 Atheros Communications, Inc. Transistor biasing independent of inductor voltage drop
US7755222B2 (en) * 2006-01-09 2010-07-13 Raytheon Company Method and system for high power switching
US8779857B2 (en) * 2009-08-14 2014-07-15 Qualcomm Incorporated Amplifier with variable matching circuit to improve linearity
CN102866340B (zh) * 2011-07-07 2015-09-16 中芯国际集成电路制造(上海)有限公司 负偏压温度不稳定性测试附加电路及测试方法
JP2015222912A (ja) * 2014-05-23 2015-12-10 三菱電機株式会社 リニアライザ
US9590498B2 (en) * 2014-12-31 2017-03-07 Lear Corporation High side switch for selectively supplying power from a power supply to a load
CN114362695B (zh) * 2022-03-17 2022-05-24 壹甲子(成都)通讯有限公司 交流小信号直接驱动的信息传输系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655996A (en) * 1969-03-13 1972-04-11 Iwatsu Electric Co Ltd Protective circuit for input circuit of junction type field effect transistor
JPS55109007A (en) 1979-02-15 1980-08-21 Nec Corp Amplifier circuit
US4320352A (en) * 1980-01-29 1982-03-16 Ford Aerospace & Communications Corp. Input optimized FET bias circuit
JPS604866A (ja) 1983-06-23 1985-01-11 Mitsubishi Electric Corp ピ−クホ−ルド回路
JPS61296804A (ja) 1985-06-26 1986-12-27 Nec Corp 電界効果トランジスタ増幅器
JPH0763140B2 (ja) 1985-11-13 1995-07-05 松下電器産業株式会社 ゲ−ト回路
DE3920871A1 (de) 1989-06-26 1991-01-03 Siemens Ag Integrierter halbleiterspeicher
DE3902871A1 (de) * 1989-02-01 1990-08-02 Standard Elektrik Lorenz Ag Automatische arbeitspunktregelung fuer hochfrequenz-feldeffekttransistoren im getasteten impulsbetrieb
WO1990014712A1 (en) 1989-05-24 1990-11-29 Motorola, Inc. Low current switched capacitor circuit
JP2879825B2 (ja) 1989-07-18 1999-04-05 東洋通信機株式会社 ４線分数巻ヘリカルアンテナ
WO1991016764A1 (en) 1990-04-26 1991-10-31 Motorola, Inc. Low current switched capacitor circuit
US5068621A (en) * 1990-08-13 1991-11-26 Triquint Semiconductor, Inc. Compensation method and apparatus for enhancing single-ended to differential conversion
US5119042A (en) 1990-08-30 1992-06-02 Hughes Aircraft Company Solid state power amplifier with dynamically adjusted operating point
JPH05267585A (ja) * 1992-03-19 1993-10-15 Mitsubishi Electric Corp 増幅器
JPH07118614B2 (ja) * 1993-01-14 1995-12-18 日本電気株式会社 増幅器
US5581077A (en) * 1994-07-05 1996-12-03 Lucent Technologies Inc. Optical receiver with a high impedance preamplifier
US5493255A (en) 1995-03-21 1996-02-20 Nokia Mobile Phones Ltd. Bias control circuit for an RF power amplifier
US5506544A (en) * 1995-04-10 1996-04-09 Motorola, Inc. Bias circuit for depletion mode field effect transistors
US5724004A (en) * 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier

Also Published As

Publication number Publication date
CN1283327A (zh) 2001-02-07
AU2414899A (en) 1999-07-12
GB2332797A (en) 1999-06-30
GB2332797B (en) 2003-05-21
EP1042863A1 (en) 2000-10-11
GB9726984D0 (en) 1998-02-18
WO1999033168A1 (en) 1999-07-01
US6255885B1 (en) 2001-07-03

Similar Documents

Publication Publication Date Title
EP0135504B1 (en) Substrate bias control circuit and method
BR9814330A (pt) Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo
KR940017215A (ko) 과전압 보호기능을 지니는 저(low)전압 입력 및 출력회로
KR870006725A (ko) 전류 감지 회로 및 집적 파우어 반도체 스위치
DE69105548D1 (de) Vorrichtung zum Schutz gegen durch An- und Ausschaltung einer elektronischen Einheit an eine Gleichspannungsspeisung erzeugte Speisespannungsstörungen.
ES2010140A6 (es) Aparato conmutador de energia en semipuente, de dos estados, bilateral, unipolar y bidireccional, y medios de alimentacion para el mismo.
MY118314A (en) Semiconductor integrated circuit
KR950020014A (ko) 기준 전류 발생 회로
KR910010723A (ko) 소메모리셀 면적에서 고안정성을 갖는 반도체기억장치
KR880004578A (ko) 래치업 방지회로를 가진 cmos 집적회로 장치
ATE349731T1 (de) Differenzstromquelle mit aktiver gleichtaktreduzierung
KR920019086A (ko) 선정된 온도 계수를 가진 기준 전류를 공급하는 기준 회로
KR920003635A (ko) 액티브필터장치
GB2350503A (en) Dynamic bias circuitry utilizing early voltage clamp and translinear techniques
KR910019050A (ko) 반도체 기억장치
KR970063275A (ko) 반도체집적회로 및 그것을 사용한 회로장치
GB2355121A (en) A stress-follower circuit configuration
KR840004833A (ko) 고임피던스 마이크로폰용 집적회로 증폭기
BR9914369A (pt) Circuito de sinalização i/o de múltiplos modos.
JPS57166713A (en) Output circuit
DE3786908D1 (de) Schutzschaltsystem.
DE69907125D1 (de) Gleichstrommessgerät mit passivem Eingang und mit galvanischer Isolierung, insbesondere für Hochspannung
ES2069246T3 (es) Dispositivo electrico de medida con doble configuracion de conexion.
ES2167082T3 (es) Circuito electronico.
ES2095370T3 (es) Circuito amplificador con transistores bipolares y de efecto de campo.

Legal Events

Date Code Title Description
B08F Application fees: application dismissed [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A,9A E 10A ANUIDADES.

B08G Application fees: restoration [chapter 8.7 patent gazette]
B07A Technical examination (opinion): publication of technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: INDEFIRO O PEDIDO DE ACORDO COM O ARTIGO 8O COMBINADO COM ARTIGO 13 DA LPI

B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL.