BR9814330A - Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo - Google Patents
Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campoInfo
- Publication number
- BR9814330A BR9814330A BR9814330-1A BR9814330A BR9814330A BR 9814330 A BR9814330 A BR 9814330A BR 9814330 A BR9814330 A BR 9814330A BR 9814330 A BR9814330 A BR 9814330A
- Authority
- BR
- Brazil
- Prior art keywords
- field effect
- effect transistor
- circuit
- polarize
- power amplifier
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 7
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Logic Circuits (AREA)
Abstract
"CIRCUITO DE TRANSISTOR DE EFEITO DE CAMPO, AMPLIFICADOR DE POTêNCIA, E, PROCESSO PARA POLARIZAR UM TRANSISTOR DE EFEITO DE CAMPO"Um circuito de transistor de efeito de campo compreende um transistor de efeito de campo (1) tendo terminais de dreno (D) e fonte (S) para conexão aos trilhos da respectiva fonte de alimentação (Vss, 4) e um terminal de porta (G) para receber um sinal de entrada. O circuito compreende adicionalmente um diodo (6) que tem seu anodo (B) conectado ao terminal de porta (G) do transistor (1) e seu catodo para conexão a uma fonte de tensão de polarização (7, Vb). O diodo (6) é arranjado de tal modo que, quando o circuito está em uso, o nível de tensão do terminal de porta (G) do transistor de efeito de campo (1) é mantido em um nível predeterminado ou abaixo de um nível predeterminado.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9726984A GB2332797B (en) | 1997-12-22 | 1997-12-22 | Low voltage transistor biasing |
PCT/EP1998/008303 WO1999033168A1 (en) | 1997-12-22 | 1998-12-17 | Low voltage transistor biasing |
Publications (1)
Publication Number | Publication Date |
---|---|
BR9814330A true BR9814330A (pt) | 2001-10-16 |
Family
ID=10823989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR9814330-1A BR9814330A (pt) | 1997-12-22 | 1998-12-17 | Circuito de transistor de efeito de campo, amplificador de potência, e, processo para polarizar um transistor de efeito de campo |
Country Status (7)
Country | Link |
---|---|
US (1) | US6255885B1 (pt) |
EP (1) | EP1042863A1 (pt) |
CN (1) | CN1283327A (pt) |
AU (1) | AU2414899A (pt) |
BR (1) | BR9814330A (pt) |
GB (1) | GB2332797B (pt) |
WO (1) | WO1999033168A1 (pt) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3107035B2 (ja) * | 1998-03-18 | 2000-11-06 | 日本電気株式会社 | 低雑音増幅器及びその制御回路 |
US20020050851A1 (en) * | 1999-12-22 | 2002-05-02 | Grundlingh Johan M. | Method and apparatus for biasing radio frequency power transistors |
CN100407572C (zh) * | 2004-08-02 | 2008-07-30 | 阎跃军 | 场效应管偏置电路 |
US7233205B2 (en) * | 2005-03-11 | 2007-06-19 | Atheros Communications, Inc. | Transistor biasing independent of inductor voltage drop |
US7755222B2 (en) * | 2006-01-09 | 2010-07-13 | Raytheon Company | Method and system for high power switching |
US8779857B2 (en) * | 2009-08-14 | 2014-07-15 | Qualcomm Incorporated | Amplifier with variable matching circuit to improve linearity |
CN102866340B (zh) * | 2011-07-07 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | 负偏压温度不稳定性测试附加电路及测试方法 |
JP2015222912A (ja) * | 2014-05-23 | 2015-12-10 | 三菱電機株式会社 | リニアライザ |
US9590498B2 (en) * | 2014-12-31 | 2017-03-07 | Lear Corporation | High side switch for selectively supplying power from a power supply to a load |
CN114362695B (zh) * | 2022-03-17 | 2022-05-24 | 壹甲子(成都)通讯有限公司 | 交流小信号直接驱动的信息传输系统 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3655996A (en) * | 1969-03-13 | 1972-04-11 | Iwatsu Electric Co Ltd | Protective circuit for input circuit of junction type field effect transistor |
JPS55109007A (en) | 1979-02-15 | 1980-08-21 | Nec Corp | Amplifier circuit |
US4320352A (en) * | 1980-01-29 | 1982-03-16 | Ford Aerospace & Communications Corp. | Input optimized FET bias circuit |
JPS604866A (ja) | 1983-06-23 | 1985-01-11 | Mitsubishi Electric Corp | ピ−クホ−ルド回路 |
JPS61296804A (ja) | 1985-06-26 | 1986-12-27 | Nec Corp | 電界効果トランジスタ増幅器 |
JPH0763140B2 (ja) | 1985-11-13 | 1995-07-05 | 松下電器産業株式会社 | ゲ−ト回路 |
DE3920871A1 (de) | 1989-06-26 | 1991-01-03 | Siemens Ag | Integrierter halbleiterspeicher |
DE3902871A1 (de) * | 1989-02-01 | 1990-08-02 | Standard Elektrik Lorenz Ag | Automatische arbeitspunktregelung fuer hochfrequenz-feldeffekttransistoren im getasteten impulsbetrieb |
WO1990014712A1 (en) | 1989-05-24 | 1990-11-29 | Motorola, Inc. | Low current switched capacitor circuit |
JP2879825B2 (ja) | 1989-07-18 | 1999-04-05 | 東洋通信機株式会社 | 4線分数巻ヘリカルアンテナ |
WO1991016764A1 (en) | 1990-04-26 | 1991-10-31 | Motorola, Inc. | Low current switched capacitor circuit |
US5068621A (en) * | 1990-08-13 | 1991-11-26 | Triquint Semiconductor, Inc. | Compensation method and apparatus for enhancing single-ended to differential conversion |
US5119042A (en) | 1990-08-30 | 1992-06-02 | Hughes Aircraft Company | Solid state power amplifier with dynamically adjusted operating point |
JPH05267585A (ja) * | 1992-03-19 | 1993-10-15 | Mitsubishi Electric Corp | 増幅器 |
JPH07118614B2 (ja) * | 1993-01-14 | 1995-12-18 | 日本電気株式会社 | 増幅器 |
US5581077A (en) * | 1994-07-05 | 1996-12-03 | Lucent Technologies Inc. | Optical receiver with a high impedance preamplifier |
US5493255A (en) | 1995-03-21 | 1996-02-20 | Nokia Mobile Phones Ltd. | Bias control circuit for an RF power amplifier |
US5506544A (en) * | 1995-04-10 | 1996-04-09 | Motorola, Inc. | Bias circuit for depletion mode field effect transistors |
US5724004A (en) * | 1996-06-13 | 1998-03-03 | Motorola, Inc. | Voltage bias and temperature compensation circuit for radio frequency power amplifier |
-
1997
- 1997-12-22 GB GB9726984A patent/GB2332797B/en not_active Expired - Fee Related
-
1998
- 1998-12-17 CN CN98812521A patent/CN1283327A/zh active Pending
- 1998-12-17 BR BR9814330-1A patent/BR9814330A/pt not_active Application Discontinuation
- 1998-12-17 WO PCT/EP1998/008303 patent/WO1999033168A1/en not_active Application Discontinuation
- 1998-12-17 AU AU24148/99A patent/AU2414899A/en not_active Abandoned
- 1998-12-17 EP EP98966639A patent/EP1042863A1/en not_active Withdrawn
- 1998-12-21 US US09/217,226 patent/US6255885B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1283327A (zh) | 2001-02-07 |
AU2414899A (en) | 1999-07-12 |
GB2332797A (en) | 1999-06-30 |
GB2332797B (en) | 2003-05-21 |
EP1042863A1 (en) | 2000-10-11 |
GB9726984D0 (en) | 1998-02-18 |
WO1999033168A1 (en) | 1999-07-01 |
US6255885B1 (en) | 2001-07-03 |
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Legal Events
Date | Code | Title | Description |
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B08F | Application fees: application dismissed [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 8A,9A E 10A ANUIDADES. |
|
B08G | Application fees: restoration [chapter 8.7 patent gazette] | ||
B07A | Technical examination (opinion): publication of technical examination (opinion) [chapter 7.1 patent gazette] | ||
B09B | Patent application refused [chapter 9.2 patent gazette] |
Free format text: INDEFIRO O PEDIDO DE ACORDO COM O ARTIGO 8O COMBINADO COM ARTIGO 13 DA LPI |
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B09B | Patent application refused [chapter 9.2 patent gazette] |
Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL. |