BR8406314A - Transistor de efeito de campo seletivo a ion(isfet),processo para proporcionar contato eletrico a uma regiao de fonte e regiao de dreno de um isfet,sonda de isfet,e sensor de ph de isfet - Google Patents

Transistor de efeito de campo seletivo a ion(isfet),processo para proporcionar contato eletrico a uma regiao de fonte e regiao de dreno de um isfet,sonda de isfet,e sensor de ph de isfet

Info

Publication number
BR8406314A
BR8406314A BR8406314A BR8406314A BR8406314A BR 8406314 A BR8406314 A BR 8406314A BR 8406314 A BR8406314 A BR 8406314A BR 8406314 A BR8406314 A BR 8406314A BR 8406314 A BR8406314 A BR 8406314A
Authority
BR
Brazil
Prior art keywords
isfet
source
sensor
field effect
electrical contact
Prior art date
Application number
BR8406314A
Other languages
English (en)
Inventor
Ronald D Baxter
Original Assignee
Gen Signal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Signal Corp filed Critical Gen Signal Corp
Publication of BR8406314A publication Critical patent/BR8406314A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
BR8406314A 1983-12-08 1984-12-10 Transistor de efeito de campo seletivo a ion(isfet),processo para proporcionar contato eletrico a uma regiao de fonte e regiao de dreno de um isfet,sonda de isfet,e sensor de ph de isfet BR8406314A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55951383A 1983-12-08 1983-12-08

Publications (1)

Publication Number Publication Date
BR8406314A true BR8406314A (pt) 1985-10-08

Family

ID=24233869

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8406314A BR8406314A (pt) 1983-12-08 1984-12-10 Transistor de efeito de campo seletivo a ion(isfet),processo para proporcionar contato eletrico a uma regiao de fonte e regiao de dreno de um isfet,sonda de isfet,e sensor de ph de isfet

Country Status (6)

Country Link
EP (1) EP0149330B1 (pt)
JP (1) JPH0765985B2 (pt)
BR (1) BR8406314A (pt)
CA (1) CA1210067A (pt)
DE (1) DE3477977D1 (pt)
IE (1) IE56190B1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224606B (it) * 1988-10-10 1990-10-04 Eniricerche Spa Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
DE4308081A1 (de) * 1993-03-13 1994-09-22 Fraunhofer Ges Forschung Halbleiterbauelement, insbesondere zur Ionendetektion
JPH10189822A (ja) * 1996-12-06 1998-07-21 Texas Instr Inc <Ti> 表面実装形基板構造および方法
EP1729121A1 (de) * 2005-05-30 2006-12-06 Mettler-Toledo AG Elektrochemischer Sensor
EP1892757B1 (en) * 2006-08-25 2017-06-07 Imec High aspect ratio via etch
US7807583B2 (en) 2006-08-25 2010-10-05 Imec High aspect ratio via etch
CN113189168A (zh) * 2021-03-31 2021-07-30 广州钰芯传感科技有限公司 一种微电极集成传感芯片及其在水质有机污染物快速检测中的应用
CN113189169A (zh) * 2021-03-31 2021-07-30 广州钰芯传感科技有限公司 一种多个微电极集成传感芯片及其在生化无酶快速检测中的应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921916A (en) * 1974-12-31 1975-11-25 Ibm Nozzles formed in monocrystalline silicon
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
DE2736200A1 (de) * 1977-08-11 1979-02-22 Bbc Brown Boveri & Cie Chemisch sensitiver feldeffekt- transistor und verfahren zur herstellung desselben
GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
FR2510260A1 (fr) * 1981-07-24 1983-01-28 Suisse Fond Rech Microtech Dispositif semiconducteur sensible aux ions

Also Published As

Publication number Publication date
EP0149330B1 (en) 1989-04-26
DE3477977D1 (en) 1989-06-01
CA1210067A (en) 1986-08-19
JPH0765985B2 (ja) 1995-07-19
IE56190B1 (en) 1991-05-08
JPS60200154A (ja) 1985-10-09
IE843141L (en) 1985-06-08
EP0149330A1 (en) 1985-07-24

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Legal Events

Date Code Title Description
PC Transfer

Free format text: HONEYWELL INC. (US)

B21A Expiry acc. art. 78, item i of ipl- expiry of the term of protection

Free format text: PATENTE EXTINTA EM 10/12/99

B15K Others concerning applications: alteration of classification

Ipc: H01L 21/768 (2006.01), H01L 23/48 (2006.0