DE3477977D1 - Isfet sensor and method of manufacture - Google Patents

Isfet sensor and method of manufacture

Info

Publication number
DE3477977D1
DE3477977D1 DE8484308485T DE3477977T DE3477977D1 DE 3477977 D1 DE3477977 D1 DE 3477977D1 DE 8484308485 T DE8484308485 T DE 8484308485T DE 3477977 T DE3477977 T DE 3477977T DE 3477977 D1 DE3477977 D1 DE 3477977D1
Authority
DE
Germany
Prior art keywords
manufacture
isfet sensor
isfet
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484308485T
Other languages
English (en)
Inventor
Ronald D. Baxter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
General Signal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Signal Corp filed Critical General Signal Corp
Application granted granted Critical
Publication of DE3477977D1 publication Critical patent/DE3477977D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8484308485T 1983-12-08 1984-12-06 Isfet sensor and method of manufacture Expired DE3477977D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55951383A 1983-12-08 1983-12-08

Publications (1)

Publication Number Publication Date
DE3477977D1 true DE3477977D1 (en) 1989-06-01

Family

ID=24233869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484308485T Expired DE3477977D1 (en) 1983-12-08 1984-12-06 Isfet sensor and method of manufacture

Country Status (6)

Country Link
EP (1) EP0149330B1 (de)
JP (1) JPH0765985B2 (de)
BR (1) BR8406314A (de)
CA (1) CA1210067A (de)
DE (1) DE3477977D1 (de)
IE (1) IE56190B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224606B (it) * 1988-10-10 1990-10-04 Eniricerche Spa Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
DE4308081A1 (de) * 1993-03-13 1994-09-22 Fraunhofer Ges Forschung Halbleiterbauelement, insbesondere zur Ionendetektion
EP0851492A3 (de) * 1996-12-06 1998-12-16 Texas Instruments Incorporated Substratstruktur zur Oberflächenmontage und Methode
EP1729121A1 (de) * 2005-05-30 2006-12-06 Mettler-Toledo AG Elektrochemischer Sensor
EP1892757B1 (de) * 2006-08-25 2017-06-07 Imec Ätzen von Vias mit hohem Aspektverhältnis
US7807583B2 (en) 2006-08-25 2010-10-05 Imec High aspect ratio via etch
CN113189168A (zh) * 2021-03-31 2021-07-30 广州钰芯传感科技有限公司 一种微电极集成传感芯片及其在水质有机污染物快速检测中的应用
CN113189169A (zh) * 2021-03-31 2021-07-30 广州钰芯传感科技有限公司 一种多个微电极集成传感芯片及其在生化无酶快速检测中的应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921916A (en) * 1974-12-31 1975-11-25 Ibm Nozzles formed in monocrystalline silicon
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
DE2736200A1 (de) * 1977-08-11 1979-02-22 Bbc Brown Boveri & Cie Chemisch sensitiver feldeffekt- transistor und verfahren zur herstellung desselben
GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
FR2510260A1 (fr) * 1981-07-24 1983-01-28 Suisse Fond Rech Microtech Dispositif semiconducteur sensible aux ions

Also Published As

Publication number Publication date
JPH0765985B2 (ja) 1995-07-19
IE56190B1 (en) 1991-05-08
JPS60200154A (ja) 1985-10-09
CA1210067A (en) 1986-08-19
EP0149330A1 (de) 1985-07-24
EP0149330B1 (de) 1989-04-26
BR8406314A (pt) 1985-10-08
IE843141L (en) 1985-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HONEYWELL INC., MINNEAPOLIS, MINN., US