BR112021022870A2 - Chip emissor de luz - Google Patents

Chip emissor de luz

Info

Publication number
BR112021022870A2
BR112021022870A2 BR112021022870A BR112021022870A BR112021022870A2 BR 112021022870 A2 BR112021022870 A2 BR 112021022870A2 BR 112021022870 A BR112021022870 A BR 112021022870A BR 112021022870 A BR112021022870 A BR 112021022870A BR 112021022870 A2 BR112021022870 A2 BR 112021022870A2
Authority
BR
Brazil
Prior art keywords
led
unit
light emitting
emitting chip
led sub
Prior art date
Application number
BR112021022870A
Other languages
English (en)
Inventor
Yeon Kim Chang
Min Jang Jong
Hak Yang Myoung
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/852,522 external-priority patent/US11587914B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of BR112021022870A2 publication Critical patent/BR112021022870A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

chip emissor de luz. a presente invenção trata de um chip emissor de luz incluindo uma primeira subunidade de led, uma segunda subunidade de led disposta na primeira subunidade de led, uma terceira subunidade de led disposta na segunda subunidade de led, uma camada de passivação disposta na terceira subunidade de led e um primeiro eletrodo de conexão eletricamente conectado a pelo menos uma das primeira, segunda e terceira subunidades de led, nas quais o primeiro eletrodo de conexão e a terceira subunidade de led formam um primeiro ângulo definido entre uma superfície superior da terceira subunidade de led e uma superfície interna do primeiro eletrodo de conexão que é inferior a cerca de 80°.
BR112021022870A 2019-05-14 2020-05-08 Chip emissor de luz BR112021022870A2 (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962847852P 2019-05-14 2019-05-14
US201962869972P 2019-07-02 2019-07-02
US16/852,522 US11587914B2 (en) 2019-05-14 2020-04-19 LED chip and manufacturing method of the same
PCT/KR2020/006115 WO2020231108A1 (en) 2019-05-14 2020-05-08 Light emitting chip

Publications (1)

Publication Number Publication Date
BR112021022870A2 true BR112021022870A2 (pt) 2022-01-04

Family

ID=72584818

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112021022870A BR112021022870A2 (pt) 2019-05-14 2020-05-08 Chip emissor de luz

Country Status (7)

Country Link
US (1) US20230207538A1 (pt)
EP (1) EP3970204A4 (pt)
JP (1) JP2022532327A (pt)
KR (1) KR20210155396A (pt)
CN (2) CN211605176U (pt)
BR (1) BR112021022870A2 (pt)
MX (1) MX2021013717A (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN211605176U (zh) * 2019-05-14 2020-09-29 首尔伟傲世有限公司 发光芯片
MX2021013719A (es) * 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Paquete de chip led y metodo de manufactura del mismo.
DE21818011T1 (de) 2020-06-03 2023-07-06 Jade Bird Display (shanghai) Limited Systeme und verfahren für eine mehrfarbige led-pixeleinheit mit horizontaler lichtemission
CN115836341A (zh) * 2020-06-03 2023-03-21 上海显耀显示科技有限公司 用于具有竖向发光的多色led像素单元的系统和方法
CN112490303A (zh) * 2020-10-28 2021-03-12 南昌大学 n面出光为特定几何图形的AlGaInP薄膜LED芯片结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
KR100987451B1 (ko) * 2003-12-04 2010-10-13 엘지전자 주식회사 면발광 소자
JP4636501B2 (ja) * 2005-05-12 2011-02-23 株式会社沖データ 半導体装置、プリントヘッド及び画像形成装置
KR101163491B1 (ko) * 2006-07-11 2012-07-18 엘지이노텍 주식회사 발광 소자 패키지
JP4555880B2 (ja) * 2008-09-04 2010-10-06 株式会社沖データ 積層半導体発光装置及び画像形成装置
EP2357679B1 (en) * 2008-11-14 2018-08-29 Samsung Electronics Co., Ltd. Vertical/horizontal light-emitting diode for semiconductor
JP2011134854A (ja) * 2009-12-24 2011-07-07 Kyocera Corp 発光素子、ならびにこれを備える光モジュールおよび画像装置
KR102197082B1 (ko) * 2014-06-16 2020-12-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광소자 패키지
US9478583B2 (en) * 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
KR102641239B1 (ko) * 2015-07-10 2024-02-29 서울바이오시스 주식회사 발광 다이오드, 그것을 제조하는 방법 및 그것을 갖는 발광 소자 모듈
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
TWI588985B (zh) * 2016-04-22 2017-06-21 友達光電股份有限公司 微型發光二極體結構及其畫素單元與發光二極體顯示面板
KR102521254B1 (ko) * 2016-06-01 2023-04-17 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
US10355043B2 (en) * 2017-06-28 2019-07-16 Globalfoundries Inc. Integrated vertical transistors and light emitting diodes
KR102503578B1 (ko) * 2017-06-30 2023-02-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
CN211605176U (zh) * 2019-05-14 2020-09-29 首尔伟傲世有限公司 发光芯片

Also Published As

Publication number Publication date
MX2021013717A (es) 2021-12-10
EP3970204A4 (en) 2023-05-24
KR20210155396A (ko) 2021-12-22
CN211605176U (zh) 2020-09-29
CN113826219A (zh) 2021-12-21
US20230207538A1 (en) 2023-06-29
JP2022532327A (ja) 2022-07-14
EP3970204A1 (en) 2022-03-23

Similar Documents

Publication Publication Date Title
BR112021022870A2 (pt) Chip emissor de luz
JP2015173289A5 (pt)
RU2019114690A (ru) Светоизлучающее устройство
BR112016024105A2 (pt) vidraça com uma superfície de comutação iluminada e uma função de aquecimento
BR112014015485A8 (pt) dispositivo refletor; e dispositivo de iluminação
BR112015026316A2 (pt) dispositivo emissor de luz
BR112015029641A2 (pt) wafer padrão para leds, wafer epitaxial para leds e método de fabricação de wafer epitaxial para leds
BR112015030722A2 (pt) aparelho emissor de luz semicondutor
AR112935A1 (es) Luz de seguridad
CL2008001567A1 (es) Algoritmos para graduar la intensidad de la luz basado en el tipo de bombilla.
EP4235826A3 (en) Interconnects for light emitting diode chips
PH12017500707A1 (en) Straight tube type light emitting diode lamp
BR112021022877A2 (pt) Pacote emissor luz
BR112012025348A2 (pt) luminária com vidro de cobertura
TWD187872S (zh) LED end cap
TW201614895A (en) Light-emitting element, display device, and lighting device
MX2021010505A (es) Elemento emisor de luz para pantalla y dispositivo de visualizacion que incluye el mismo.
BR112021022862A2 (pt) Chip emissor de luz e pacote emissor de luz compreendendo o mesmo
EA201990029A1 (ru) Прибор на органических светодиодах и устройство отображения
PE20170802A1 (es) Almohadillas de pista y montaje de pista
BR112021022881A2 (pt) Pacote emissor de luz
BR112021006417A2 (pt) dispositivo emissor de luz
RU2016106283A (ru) Светоизлучающий элемент
CN103904196A (zh) 一种发光二极管基座及使用其的光源
PH12018500163A1 (en) Front-mounted metal-embedded refractive device and light source