BR112021022862A2 - Chip emissor de luz e pacote emissor de luz compreendendo o mesmo - Google Patents
Chip emissor de luz e pacote emissor de luz compreendendo o mesmoInfo
- Publication number
- BR112021022862A2 BR112021022862A2 BR112021022862A BR112021022862A BR112021022862A2 BR 112021022862 A2 BR112021022862 A2 BR 112021022862A2 BR 112021022862 A BR112021022862 A BR 112021022862A BR 112021022862 A BR112021022862 A BR 112021022862A BR 112021022862 A2 BR112021022862 A2 BR 112021022862A2
- Authority
- BR
- Brazil
- Prior art keywords
- light
- led
- emitting
- same
- subunits
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
chip emissor de luz e pacote emissor de luz compreendendo o mesmo. a presente invenção trata de chip emissor de luz incluindo uma primeira subunidade de led, uma segunda subunidade de led disposta na primeira subunidade de led, uma terceira subunidade de led disposta na segunda subunidade de led, uma primeira camada de ligação interposta entre a primeira e segundas subunidades de led, uma segunda camada de ligação interposta entre a segunda e a terceira subunidades de led e um primeiro eletrodo de conexão eletricamente conectado e sobreposto a pelo menos uma das primeira, segunda e terceira subunidades de led, o primeiro eletrodo de conexão tendo primeira e segunda superfícies laterais opostas, a primeira superfície lateral tendo um primeiro comprimento e a segunda superfície lateral tendo um segundo comprimento, no qual a diferença de comprimento entre a primeira superfície lateral e a segunda superfície lateral do primeiro eletrodo de conexão é maior do que uma espessura de pelo menos uma das subunidades de led.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962847836P | 2019-05-14 | 2019-05-14 | |
US201962866519P | 2019-06-25 | 2019-06-25 | |
US16/848,914 US11855121B2 (en) | 2019-05-14 | 2020-04-15 | LED chip and manufacturing method of the same |
PCT/KR2020/006114 WO2020231107A1 (en) | 2019-05-14 | 2020-05-08 | Led chip and manufacturing method of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112021022862A2 true BR112021022862A2 (pt) | 2021-12-28 |
Family
ID=72528458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112021022862A BR112021022862A2 (pt) | 2019-05-14 | 2020-05-08 | Chip emissor de luz e pacote emissor de luz compreendendo o mesmo |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240088197A1 (pt) |
EP (1) | EP3970202A4 (pt) |
JP (1) | JP2022532154A (pt) |
KR (1) | KR20210155394A (pt) |
CN (2) | CN211578782U (pt) |
BR (1) | BR112021022862A2 (pt) |
MX (1) | MX2021013716A (pt) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112021022862A2 (pt) * | 2019-05-14 | 2021-12-28 | Seoul Viosys Co Ltd | Chip emissor de luz e pacote emissor de luz compreendendo o mesmo |
CN112736169A (zh) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | 发光器件及显示装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070170444A1 (en) * | 2004-07-07 | 2007-07-26 | Cao Group, Inc. | Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same |
JP4636501B2 (ja) * | 2005-05-12 | 2011-02-23 | 株式会社沖データ | 半導体装置、プリントヘッド及び画像形成装置 |
EP2355151A3 (en) * | 2010-01-29 | 2015-12-30 | Oki Data Corporation | Semiconductor light emitting device and image forming apparatus |
JP5754173B2 (ja) * | 2011-03-01 | 2015-07-29 | ソニー株式会社 | 発光ユニットおよび表示装置 |
KR101886156B1 (ko) * | 2012-08-21 | 2018-09-11 | 엘지이노텍 주식회사 | 발광소자 |
JP2014160736A (ja) * | 2013-02-19 | 2014-09-04 | Toshiba Corp | 半導体発光装置及び発光装置 |
JP6604786B2 (ja) * | 2015-09-11 | 2019-11-13 | 三星電子株式会社 | 半導体発光装置およびその製造方法 |
US10126831B2 (en) * | 2015-10-16 | 2018-11-13 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip, light emitting device and electronic device including the same |
BR112021022862A2 (pt) * | 2019-05-14 | 2021-12-28 | Seoul Viosys Co Ltd | Chip emissor de luz e pacote emissor de luz compreendendo o mesmo |
-
2020
- 2020-05-08 BR BR112021022862A patent/BR112021022862A2/pt unknown
- 2020-05-08 KR KR1020217037197A patent/KR20210155394A/ko active Search and Examination
- 2020-05-08 EP EP20804981.7A patent/EP3970202A4/en active Pending
- 2020-05-08 MX MX2021013716A patent/MX2021013716A/es unknown
- 2020-05-08 CN CN202020747872.5U patent/CN211578782U/zh active Active
- 2020-05-08 CN CN202080035660.7A patent/CN113826217A/zh active Pending
- 2020-05-08 JP JP2021566349A patent/JP2022532154A/ja active Pending
-
2023
- 2023-11-20 US US18/514,867 patent/US20240088197A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20240088197A1 (en) | 2024-03-14 |
EP3970202A4 (en) | 2023-05-31 |
CN113826217A (zh) | 2021-12-21 |
JP2022532154A (ja) | 2022-07-13 |
KR20210155394A (ko) | 2021-12-22 |
EP3970202A1 (en) | 2022-03-23 |
MX2021013716A (es) | 2021-11-25 |
CN211578782U (zh) | 2020-09-25 |
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