BR112021009454B1 - Método para produzir um dispositivo termoelétrico - Google Patents
Método para produzir um dispositivo termoelétrico Download PDFInfo
- Publication number
- BR112021009454B1 BR112021009454B1 BR112021009454-7A BR112021009454A BR112021009454B1 BR 112021009454 B1 BR112021009454 B1 BR 112021009454B1 BR 112021009454 A BR112021009454 A BR 112021009454A BR 112021009454 B1 BR112021009454 B1 BR 112021009454B1
- Authority
- BR
- Brazil
- Prior art keywords
- pellet
- thermoelectric
- metal
- pellets
- thermal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000008188 pellet Substances 0.000 claims abstract description 282
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 230000009022 nonlinear effect Effects 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 230000005676 thermoelectric effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 230000000694 effects Effects 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 28
- 230000001965 increasing effect Effects 0.000 abstract description 26
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 230000009021 linear effect Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000010248 power generation Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005094 computer simulation Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000005246 galvanizing Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010205 computational analysis Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 description 3
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000009760 electrical discharge machining Methods 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- -1 antimony tellurides Chemical class 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Photovoltaic Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BR122022021687-0A BR122022021687B1 (pt) | 2018-11-16 | 2019-11-16 | Dispositivo termoelétrico |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862768679P | 2018-11-16 | 2018-11-16 | |
| US62/768,679 | 2018-11-16 | ||
| PCT/US2019/061894 WO2020102785A1 (en) | 2018-11-16 | 2019-11-16 | Thermal lensing electrode in thermoelectric generators for improved performance |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| BR112021009454A2 BR112021009454A2 (pt) | 2021-08-10 |
| BR112021009454A8 BR112021009454A8 (pt) | 2022-12-20 |
| BR112021009454B1 true BR112021009454B1 (pt) | 2023-09-26 |
Family
ID=70730616
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR122022021687-0A BR122022021687B1 (pt) | 2018-11-16 | 2019-11-16 | Dispositivo termoelétrico |
| BR112021009454-7A BR112021009454B1 (pt) | 2018-11-16 | 2019-11-16 | Método para produzir um dispositivo termoelétrico |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR122022021687-0A BR122022021687B1 (pt) | 2018-11-16 | 2019-11-16 | Dispositivo termoelétrico |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US11552235B2 (https=) |
| EP (2) | EP3881364B1 (https=) |
| JP (2) | JP7453973B2 (https=) |
| KR (3) | KR102582909B1 (https=) |
| CN (1) | CN113272979B (https=) |
| AU (3) | AU2019381834B2 (https=) |
| BR (2) | BR122022021687B1 (https=) |
| CA (2) | CA3119766A1 (https=) |
| MX (1) | MX2021005722A (https=) |
| PH (1) | PH12021551110A1 (https=) |
| WO (1) | WO2020102785A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12035630B2 (en) * | 2019-08-30 | 2024-07-09 | Sumitomo Electric Industries, Ltd. | Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor |
| WO2023201062A1 (en) * | 2022-04-15 | 2023-10-19 | Ats Ip, Llc | Unipolar thermoelectric generator with vertical interconnects and thermal focusing |
| EP4508954A1 (en) * | 2022-04-15 | 2025-02-19 | Ats Ip, Llc | Unipolar thermoelectric generator with vertical interconnects and thermal focusing |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3547706A (en) * | 1967-04-21 | 1970-12-15 | Teledyne Inc | Junction assembly for thermocouples |
| DE2547262C3 (de) | 1975-10-22 | 1981-07-16 | Reinhard Dr. 7101 Flein Dahlberg | Thermoelektrische Anordnung mit großen Temperaturgradienten und Verwendung |
| US4320251A (en) * | 1980-07-28 | 1982-03-16 | Solamat Inc. | Ohmic contacts for solar cells by arc plasma spraying |
| US4654224A (en) | 1985-02-19 | 1987-03-31 | Energy Conversion Devices, Inc. | Method of manufacturing a thermoelectric element |
| JP2636119B2 (ja) | 1992-09-08 | 1997-07-30 | 工業技術院長 | 熱電素子シートとその製造方法 |
| US5441576A (en) * | 1993-02-01 | 1995-08-15 | Bierschenk; James L. | Thermoelectric cooler |
| US5441546A (en) * | 1993-11-08 | 1995-08-15 | Moard; David | Apparatus and method for decreasing nitrogen oxide emissions from internal combustion power sources |
| JPH09293906A (ja) * | 1996-04-25 | 1997-11-11 | Osaka Gas Co Ltd | 熱電変換素子 |
| JP2896496B2 (ja) * | 1996-06-27 | 1999-05-31 | 科学技術庁航空宇宙技術研究所長 | 熱電変換装置 |
| JP2000349352A (ja) * | 1999-06-03 | 2000-12-15 | Yamaha Corp | 熱電素子及び熱電素子の製造方法 |
| DE10022726C2 (de) | 1999-08-10 | 2003-07-10 | Matsushita Electric Works Ltd | Thermoelektrisches Modul mit verbessertem Wärmeübertragungsvermögen und Verfahren zum Herstellen desselben |
| JP2003197987A (ja) | 2001-12-25 | 2003-07-11 | Kyocera Corp | 熱電素子モジュールならびに半導体素子収納用パッケージおよび半導体モジュール |
| JP2004087827A (ja) * | 2002-08-27 | 2004-03-18 | Kyocera Corp | 熱電素子搭載用配線基板および熱電素子モジュール |
| JP4488778B2 (ja) * | 2003-07-25 | 2010-06-23 | 株式会社東芝 | 熱電変換装置 |
| EP1665401A2 (en) * | 2003-09-12 | 2006-06-07 | Board of Trustees operating Michigan State University | Silver-containing thermoelectric compounds |
| US8426720B2 (en) | 2004-01-09 | 2013-04-23 | Industrial Technology Research Institute | Micro thermoelectric device and manufacturing method thereof |
| US20060005873A1 (en) * | 2004-07-06 | 2006-01-12 | Mitsuru Kambe | Thermoelectric conversion module |
| JP4544927B2 (ja) | 2004-07-15 | 2010-09-15 | 株式会社鷺宮製作所 | 電動式コントロールバルブおよび冷凍サイクル装置 |
| US20060048809A1 (en) | 2004-09-09 | 2006-03-09 | Onvural O R | Thermoelectric devices with controlled current flow and related methods |
| US20080023057A1 (en) | 2004-11-02 | 2008-01-31 | Showa Denko K.K. | Thermoelectric Conversion Module, and Thermoelectric Power Generating Device and Method, Exhaust Heat Recovery System, Solar Heat Utilization System, and Peltier Cooling and Heating System, Provided Therewith |
| JP2006294935A (ja) * | 2005-04-12 | 2006-10-26 | Kiyoshi Inaizumi | 高能率低損失熱電モジュール |
| JP2008010612A (ja) * | 2006-06-29 | 2008-01-17 | Komatsu Ltd | 熱電素子及びその製造方法、並びに、熱電モジュール |
| JP2008166638A (ja) * | 2007-01-04 | 2008-07-17 | Toyota Motor Corp | 熱電素子モジュール |
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| JP2010093009A (ja) * | 2008-10-07 | 2010-04-22 | Sumitomo Chemical Co Ltd | 熱電変換モジュールおよび熱電変換素子 |
| WO2010090460A2 (ko) | 2009-02-05 | 2010-08-12 | 주식회사 엘지화학 | 열전 소자 모듈 및 열전 소자 제조 방법 |
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| JP2013026567A (ja) * | 2011-07-25 | 2013-02-04 | Denso Corp | 熱電素子の製造方法 |
| US8956905B2 (en) | 2013-02-01 | 2015-02-17 | Berken Energy Llc | Methods for thick films thermoelectric device fabrication |
| US20160163950A1 (en) * | 2014-12-08 | 2016-06-09 | Industrial Technology Research Institute | Structure of thermoelectric module and fabricating method thereof |
| KR102322169B1 (ko) | 2014-12-24 | 2021-11-03 | 한국전기연구원 | 니켈 전해도금을 이용한 열전소자용 전극 제조방법 |
| KR102019885B1 (ko) * | 2015-07-02 | 2019-09-09 | 주식회사 엘지화학 | 열전 모듈 및 그 제조 방법 |
| DE102015213295A1 (de) * | 2015-07-15 | 2017-01-19 | Mahle International Gmbh | Thermoelektrischer Wärmetauscher |
| DE102015224020B4 (de) * | 2015-12-02 | 2019-05-23 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Thermoelektrisches Modul |
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