BR112014014064A2 - detector de radiação e aparelho detector de radiação - Google Patents

detector de radiação e aparelho detector de radiação

Info

Publication number
BR112014014064A2
BR112014014064A2 BR112014014064A BR112014014064A BR112014014064A2 BR 112014014064 A2 BR112014014064 A2 BR 112014014064A2 BR 112014014064 A BR112014014064 A BR 112014014064A BR 112014014064 A BR112014014064 A BR 112014014064A BR 112014014064 A2 BR112014014064 A2 BR 112014014064A2
Authority
BR
Brazil
Prior art keywords
cathode
anode
segments
radiation detector
electrode
Prior art date
Application number
BR112014014064A
Other languages
English (en)
Portuguese (pt)
Other versions
BR112014014064A8 (pt
Inventor
Herrmann Christoph
Jürgen Engel Klaus
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112014014064A8 publication Critical patent/BR112014014064A8/pt
Publication of BR112014014064A2 publication Critical patent/BR112014014064A2/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
BR112014014064A 2011-12-13 2012-12-12 detector de radiação e aparelho detector de radiação BR112014014064A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161569833P 2011-12-13 2011-12-13
PCT/IB2012/057212 WO2013088352A2 (en) 2011-12-13 2012-12-12 Radiation detector

Publications (2)

Publication Number Publication Date
BR112014014064A8 BR112014014064A8 (pt) 2017-06-13
BR112014014064A2 true BR112014014064A2 (pt) 2017-06-13

Family

ID=47624380

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014014064A BR112014014064A2 (pt) 2011-12-13 2012-12-12 detector de radiação e aparelho detector de radiação

Country Status (8)

Country Link
US (1) US20140319363A1 (cg-RX-API-DMAC10.html)
EP (1) EP2748639B1 (cg-RX-API-DMAC10.html)
JP (1) JP6235480B2 (cg-RX-API-DMAC10.html)
CN (1) CN104024889A (cg-RX-API-DMAC10.html)
BR (1) BR112014014064A2 (cg-RX-API-DMAC10.html)
IN (1) IN2014CN04758A (cg-RX-API-DMAC10.html)
RU (1) RU2014128555A (cg-RX-API-DMAC10.html)
WO (1) WO2013088352A2 (cg-RX-API-DMAC10.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6186205B2 (ja) * 2013-08-15 2017-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP2876465A1 (en) * 2013-11-26 2015-05-27 Danmarks Tekniske Universitet (DTU) X-ray and gamma-ray radiation detector
AT515501B1 (de) * 2014-02-18 2016-01-15 Griesmayer Erich Dr Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen
DE102014207324A1 (de) * 2014-04-16 2015-10-22 Siemens Aktiengesellschaft Direktkonvertierender Röntgenstrahlungsdetektor und CT-System
JP6262919B2 (ja) * 2014-12-05 2018-01-17 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. 傾斜角度でx線放射線を検出するx線検出器装置
WO2016096622A1 (en) * 2014-12-17 2016-06-23 Koninklijke Philips N.V. Detector and method for detecting ionizing radiation
KR20170097748A (ko) * 2014-12-19 2017-08-28 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기와, 다양한 적용예를 포함하는 입자 검출 및 이미지화를 위한 시스템 및 방법
US9482764B1 (en) * 2015-05-28 2016-11-01 General Electric Company Systems and methods for charge-sharing identification and correction using a single pixel
JP6808317B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
CN105540526B (zh) * 2015-12-29 2017-03-15 中国科学院电子学研究所 单片复合敏感电极的制造方法、基于其的敏感器件
CN108885273B (zh) * 2016-03-23 2023-09-08 皇家飞利浦有限公司 具有整体像素边界的纳米材料成像探测器
CN105974460B (zh) * 2016-05-11 2018-12-07 天津大学 可重构型x射线能谱探测方法及探测器像素单元结构
CN106324649B (zh) * 2016-08-31 2023-09-15 同方威视技术股份有限公司 半导体探测器
EP3306353A1 (en) * 2016-10-07 2018-04-11 Danmarks Tekniske Universitet Radiation detector
GB201703196D0 (en) 2017-02-28 2017-04-12 Univ Of Sussex X-ray and gammay-ray photodiode
EP3422051A1 (en) * 2017-06-28 2019-01-02 Koninklijke Philips N.V. Direct conversion radiation detection
WO2019019038A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. X-RAY DETECTOR CAPABLE OF MANAGING LOAD SHARING AT ITS PERIPHERY
CN110914712B (zh) 2017-07-26 2024-01-12 深圳帧观德芯科技有限公司 具有内置去极化装置的辐射检测器
CN108267777B (zh) * 2018-02-26 2023-07-07 张岚 面阵列像素探测器及中低能射线源的定向方法
EP4111238A4 (en) * 2020-02-26 2023-12-06 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector
US11835666B1 (en) * 2020-07-31 2023-12-05 Redlen Technologies, Inc. Photon counting computed tomography detector with improved count rate stability and method of operating same
US11953452B2 (en) * 2021-03-01 2024-04-09 Redlen Technologies, Inc. Ionizing radiation detector with reduced street width and improved count rate stability
JP2023055071A (ja) * 2021-10-05 2023-04-17 キヤノンメディカルシステムズ株式会社 検出器モジュール、x線コンピュータ断層撮影装置及びx線検出装置
CN120358815B (zh) * 2025-06-19 2025-10-03 湘潭大学 一种带有肖特基漂浮电极的小像素阵列探测器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6046454A (en) * 1995-10-13 2000-04-04 Digirad Corporation Semiconductor radiation detector with enhanced charge collection
DE19616545B4 (de) * 1996-04-25 2006-05-11 Siemens Ag Schneller Strahlungsdetektor
SE514472C2 (sv) * 1999-04-14 2001-02-26 Xcounter Ab Strålningsdetektor och en anordning för användning vid radiografi
JP3900992B2 (ja) * 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
US7145986B2 (en) * 2004-05-04 2006-12-05 General Electric Company Solid state X-ray detector with improved spatial resolution
JP4881071B2 (ja) * 2006-05-30 2012-02-22 株式会社日立製作所 放射線検出器、及びこれを搭載した放射線撮像装置
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
JP5155808B2 (ja) * 2008-10-08 2013-03-06 株式会社日立製作所 半導体放射線検出器および核医学診断装置
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
NL1037989C2 (en) * 2010-05-28 2011-11-29 Photonis France Sas An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure.

Also Published As

Publication number Publication date
WO2013088352A2 (en) 2013-06-20
JP6235480B2 (ja) 2017-11-22
EP2748639A2 (en) 2014-07-02
BR112014014064A8 (pt) 2017-06-13
WO2013088352A3 (en) 2013-08-08
US20140319363A1 (en) 2014-10-30
JP2015507841A (ja) 2015-03-12
EP2748639B1 (en) 2019-07-17
CN104024889A (zh) 2014-09-03
IN2014CN04758A (cg-RX-API-DMAC10.html) 2015-09-18
RU2014128555A (ru) 2016-02-10

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2494 DE 23-10-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]