BR112014013407A2 - interface aperfeiçoada entre uma camada i-iii-vi2 e uma camada de contato traseira, em uma célula fotovoltáica - Google Patents

interface aperfeiçoada entre uma camada i-iii-vi2 e uma camada de contato traseira, em uma célula fotovoltáica

Info

Publication number
BR112014013407A2
BR112014013407A2 BR112014013407A BR112014013407A BR112014013407A2 BR 112014013407 A2 BR112014013407 A2 BR 112014013407A2 BR 112014013407 A BR112014013407 A BR 112014013407A BR 112014013407 A BR112014013407 A BR 112014013407A BR 112014013407 A2 BR112014013407 A2 BR 112014013407A2
Authority
BR
Brazil
Prior art keywords
layer
contact layer
iii
metal
photovoltaic cell
Prior art date
Application number
BR112014013407A
Other languages
English (en)
Inventor
Parissi Ludovic
Angle Stéphanie
Original Assignee
Nexcis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexcis filed Critical Nexcis
Publication of BR112014013407A2 publication Critical patent/BR112014013407A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

resumo patente de invenção "interface aperfeiçoada entre uma camada i-iii-vi2 e uma camada de contato traseira, em uma célula fotovoltáica". a invenção refere-se a um processo de fabricação de uma camada i-iii-vi2 com propriedades fotovoltaicas, comportando: - o depósito sobre um substrato de um metal para formar uma camada de contato; - o depósito de um precursor da camada fotovoltaica, sobre a camada de contato, e - um tratamento térmico do precursor com fornecimento em elemento vi para formar a camada i-iii-vi2. o elemento vi se propaga habitualmente durante o tratamento térmico na camada de contato (mo) e se combina com o metal para formar uma camada superfície (sup) sobre a camada de contato. no processo da invenção, o depósito de metal compreende uma etapa durante a qual um elemento adicional é acrescentado ao metal para formar um composto (mo-ea), na camada de contato, exercendo o papel de barreira de difusão no elemento vi, o que permite controlar finamente as propriedades da camada superficial, notadamente sua espessura.
BR112014013407A 2011-12-05 2012-11-22 interface aperfeiçoada entre uma camada i-iii-vi2 e uma camada de contato traseira, em uma célula fotovoltáica BR112014013407A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1161172A FR2983642B1 (fr) 2011-12-05 2011-12-05 Interface perfectionnee entre une couche i-iii-vi2 et une couche de contact arriere, dans une cellule photovoltaique.
PCT/FR2012/052703 WO2013083897A1 (fr) 2011-12-05 2012-11-22 Interface perfectionnée entre une couche i-iii-vi2 et une couche de contact arrière, dans une cellule photovoltaïque

Publications (1)

Publication Number Publication Date
BR112014013407A2 true BR112014013407A2 (pt) 2017-06-13

Family

ID=47436051

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014013407A BR112014013407A2 (pt) 2011-12-05 2012-11-22 interface aperfeiçoada entre uma camada i-iii-vi2 e uma camada de contato traseira, em uma célula fotovoltáica

Country Status (11)

Country Link
US (1) US9478695B2 (pt)
EP (1) EP2801104B1 (pt)
JP (1) JP2015505156A (pt)
KR (1) KR20140105474A (pt)
CN (1) CN104025253B (pt)
BR (1) BR112014013407A2 (pt)
FR (1) FR2983642B1 (pt)
MA (1) MA35655B1 (pt)
TN (1) TN2014000204A1 (pt)
TW (1) TW201324837A (pt)
WO (1) WO2013083897A1 (pt)

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456172A (ja) 1990-06-21 1992-02-24 Fuji Electric Co Ltd ＣｕＩｎＳｅ↓２薄膜の形成方法
JP3097805B2 (ja) * 1994-10-03 2000-10-10 矢崎総業株式会社 太陽電池とその製造方法並びにめっき方法
US6784096B2 (en) * 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
CN100573812C (zh) * 2004-03-15 2009-12-23 索罗能源公司 用于太阳能电池制造的沉积半导体薄层的技术和装置
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
JP2006080371A (ja) * 2004-09-10 2006-03-23 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
JP4663300B2 (ja) 2004-11-18 2011-04-06 本田技研工業株式会社 カルコパイライト型薄膜太陽電池の製造方法
US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US7547569B2 (en) 2006-11-22 2009-06-16 Applied Materials, Inc. Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process
US7875945B2 (en) * 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
KR20090034079A (ko) 2007-10-02 2009-04-07 엘지전자 주식회사 이셀렌화몰리브덴층을 포함하는 태양전지 및 그의 제조방법
FR2922364B1 (fr) * 2007-10-12 2014-08-22 Saint Gobain Procede de fabrication d'une electrode en oxyde de molybdene
JP4829926B2 (ja) * 2008-05-29 2011-12-07 本田技研工業株式会社 太陽電池及び太陽電池の製造方法
KR100995829B1 (ko) * 2008-09-16 2010-11-23 주식회사 동부하이텍 반도체 소자 및 그의 제조방법
CN101752454B (zh) 2008-12-04 2014-08-13 上海空间电源研究所 具有陷光结构的超薄铜铟镓硒薄膜太阳电池的制备方法
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
TW201042065A (en) * 2009-05-22 2010-12-01 Ind Tech Res Inst Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
JP5114683B2 (ja) * 2009-09-07 2013-01-09 新日鐵住金株式会社 太陽電池用ガラス基板の裏面電極及びその製造方法
KR101172132B1 (ko) * 2009-09-30 2012-08-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
WO2011046388A2 (ko) * 2009-10-15 2011-04-21 엘지이노텍주식회사 태양광 발전장치 및 이의 제조방법
US20110294254A1 (en) * 2009-12-28 2011-12-01 Jackrel David B Low cost solar cells formed using a chalcogenization rate modifier
US8889469B2 (en) * 2009-12-28 2014-11-18 Aeris Capital Sustainable Ip Ltd. Multi-nary group IB and VIA based semiconductor
JP2011198883A (ja) * 2010-03-18 2011-10-06 Fujifilm Corp 光電変換素子
FR2982422B1 (fr) * 2011-11-09 2013-11-15 Saint Gobain Substrat conducteur pour cellule photovoltaique

Also Published As

Publication number Publication date
KR20140105474A (ko) 2014-09-01
WO2013083897A1 (fr) 2013-06-13
CN104025253A (zh) 2014-09-03
TW201324837A (zh) 2013-06-16
MA35655B1 (fr) 2014-11-01
FR2983642A1 (fr) 2013-06-07
EP2801104A1 (fr) 2014-11-12
EP2801104B1 (fr) 2021-06-09
CN104025253B (zh) 2018-07-27
TN2014000204A1 (fr) 2015-09-30
US9478695B2 (en) 2016-10-25
US20140315346A1 (en) 2014-10-23
JP2015505156A (ja) 2015-02-16
FR2983642B1 (fr) 2014-01-03

Similar Documents

Publication Publication Date Title
ES2568483T3 (es) Substrato con una capa de sol-gel y procedimiento para la obtención de un material compuesto
BR112014017440A8 (pt) vidraça com revestimento de reflexão de radiação térmica
BR112012019898A2 (pt) método para fabricar um transistor
BR112014016332A2 (pt) Barreira de difusão de película fina
BR112015014939A2 (pt) método para fabricar dispositivos optoeletrônicos de filme fino; dispositivo optoeletrônico de filme fino passível de obtenção através do método; e aparelho
FR2982422B1 (fr) Substrat conducteur pour cellule photovoltaique
TW201612614A (en) Electrochromic devices
JP2011100982A5 (pt)
JP2012009838A5 (ja) 半導体装置の作製方法
JP2013160637A5 (pt)
BR112012028292A2 (pt) artigo, método de dopagem de grafeno, fotodetector e dispositivo
MY145709A (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
EA201391386A1 (ru) Многослойное изоляционное остекление, включающее два стеклопакета с низкой эмиссионной способностью
FR2963982B1 (fr) Procede de collage a basse temperature
IL200728A0 (en) Method for the production of a solar cell and solar cell produced using said method
TR201909120T4 (tr) SIOC esaslı alkali metal bariyer katmanı ve üretim yöntemi.
MX351386B (es) Soporte electricamente conductivo para una unidad encristalada que tiene propiedades de dispersion variable mediadas por cristal liquido y tal unidad encristalada.
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
WO2012118944A3 (en) Techniques for producing thin films of single crystal diamond
GB2495166A (en) Single-junction photovoltaic cell
MY171609A (en) Laser etching a stack of thin layers for a connection of a photovoltaic cell
MY175806A (en) Conductivity enhancement of solar cells
MY184180A (en) Wafer-processing tape
BRPI1002381A2 (pt) Método e reator de densificação de um substrato poroso
TW201130046A (en) Semiconductor device and process for production of semiconductor device

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]