BR112014011422A2 - dispositivo de armazenamento de alta densidade de energia - Google Patents
dispositivo de armazenamento de alta densidade de energiaInfo
- Publication number
- BR112014011422A2 BR112014011422A2 BR112014011422A BR112014011422A BR112014011422A2 BR 112014011422 A2 BR112014011422 A2 BR 112014011422A2 BR 112014011422 A BR112014011422 A BR 112014011422A BR 112014011422 A BR112014011422 A BR 112014011422A BR 112014011422 A2 BR112014011422 A2 BR 112014011422A2
- Authority
- BR
- Brazil
- Prior art keywords
- storage device
- high energy
- energy density
- density storage
- storage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/258—Temperature compensation means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161560461P | 2011-11-16 | 2011-11-16 | |
PCT/US2012/064944 WO2013074577A1 (en) | 2011-11-16 | 2012-11-14 | High energy density storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112014011422A2 true BR112014011422A2 (pt) | 2017-05-16 |
Family
ID=48430092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112014011422A BR112014011422A2 (pt) | 2011-11-16 | 2012-11-14 | dispositivo de armazenamento de alta densidade de energia |
Country Status (6)
Country | Link |
---|---|
US (3) | US9230741B2 (pt) |
EP (1) | EP2780919B1 (pt) |
JP (2) | JP6242337B2 (pt) |
CN (1) | CN103946937B (pt) |
BR (1) | BR112014011422A2 (pt) |
WO (1) | WO2013074577A1 (pt) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6242337B2 (ja) * | 2011-11-16 | 2017-12-06 | スチュアート,マーティン,エー. | 高エネルギー密度蓄電装置 |
US10373767B2 (en) * | 2017-11-21 | 2019-08-06 | Vactronix Scientific, Llc | Structural supercapacitor composite and method of making same |
WO2021247117A2 (en) * | 2020-03-19 | 2021-12-09 | Frank David L | Dielectric energy storage systems |
WO2020232693A1 (zh) * | 2019-05-23 | 2020-11-26 | 深圳先进技术研究院 | 埋入式电容材料、其制备方法及印制线路板 |
CN111739736B (zh) * | 2020-06-29 | 2021-11-30 | 陕西理工大学 | 一种具有高储能密度的柔性薄膜电容器及制备方法 |
JP2022073617A (ja) * | 2020-11-02 | 2022-05-17 | 株式会社村田製作所 | 積層セラミックコンデンサ |
Family Cites Families (49)
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JPS541918B1 (pt) * | 1966-11-22 | 1979-01-30 | ||
JPS5434160B1 (pt) * | 1968-10-12 | 1979-10-25 | ||
JPS6144415A (ja) * | 1984-08-09 | 1986-03-04 | マルコン電子株式会社 | 薄膜コンデンサ |
JPS61232604A (ja) * | 1985-04-08 | 1986-10-16 | 松下電器産業株式会社 | 金属化プラスチツクフイルムコンデンサ |
JPH01202806A (ja) * | 1988-02-08 | 1989-08-15 | Matsushita Electric Ind Co Ltd | コンデンサー |
US5636100A (en) | 1993-10-12 | 1997-06-03 | The United States Of America As Represented By The Secretary Of The Army | Capacitor having an enhanced dielectric breakdown strength |
US5576925A (en) | 1994-12-27 | 1996-11-19 | General Electric Company | Flexible multilayer thin film capacitors |
US5790368A (en) | 1995-06-27 | 1998-08-04 | Murata Manufacturing Co., Ltd. | Capacitor and manufacturing method thereof |
US5774326A (en) | 1995-08-25 | 1998-06-30 | General Electric Company | Multilayer capacitors using amorphous hydrogenated carbon |
US5638251A (en) | 1995-10-03 | 1997-06-10 | Advanced Refractory Technologies, Inc. | Capacitive thin films using diamond-like nanocomposite materials |
US5736448A (en) * | 1995-12-04 | 1998-04-07 | General Electric Company | Fabrication method for thin film capacitors |
US5926359A (en) | 1996-04-01 | 1999-07-20 | International Business Machines Corporation | Metal-insulator-metal capacitor |
FR2748346B1 (fr) | 1996-05-06 | 1998-07-24 | Pixtech Sa | Realisation d'une anode d'ecran plat de visualisation |
JPH113834A (ja) * | 1996-07-25 | 1999-01-06 | Murata Mfg Co Ltd | 積層セラミックコンデンサおよびその製造方法 |
US5844770A (en) * | 1997-08-21 | 1998-12-01 | K Systems Corporation | Capacitor structures with dielectric coated conductive substrates |
IL132834A (en) * | 1998-11-23 | 2006-06-11 | Micro Coating Technologies | Production of capacitors with a thin layer |
JP2001267751A (ja) * | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | コンデンサ内蔵基板およびその製造方法 |
US7033406B2 (en) | 2001-04-12 | 2006-04-25 | Eestor, Inc. | Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries |
JP3785966B2 (ja) * | 2001-08-23 | 2006-06-14 | 株式会社村田製作所 | 積層セラミック電子部品の製造方法および積層セラミック電子部品 |
DE10221498A1 (de) * | 2002-05-14 | 2003-12-04 | Basf Ag | Kondensatoren hoher Energiedichte |
US7057881B2 (en) | 2004-03-18 | 2006-06-06 | Nanosys, Inc | Nanofiber surface based capacitors |
JP4578134B2 (ja) | 2004-03-29 | 2010-11-10 | 京セラ株式会社 | コンデンサ内蔵ガラスセラミック多層配線基板 |
US7023089B1 (en) | 2004-03-31 | 2006-04-04 | Intel Corporation | Low temperature packaging apparatus and method |
US7180724B2 (en) | 2004-09-30 | 2007-02-20 | Intel Corporation | Electrolytic polymer capacitors for decoupling power delivery, packages made therewith, and systems containing same |
US8030219B1 (en) | 2005-02-07 | 2011-10-04 | Morgan Advanced Ceramics, Inc. | Dielectric coatings and use in capacitors |
US7580240B2 (en) * | 2005-11-24 | 2009-08-25 | Ngk Spark Plug Co., Ltd. | Via array capacitor, wiring board incorporating a via array capacitor, and method of manufacturing the same |
US7460352B2 (en) | 2006-01-09 | 2008-12-02 | Faradox Energy Storage, Inc. | Flexible dielectric film and method for making |
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US7990679B2 (en) | 2006-07-14 | 2011-08-02 | Dais Analytic Corporation | Nanoparticle ultracapacitor |
US8097557B2 (en) | 2006-08-08 | 2012-01-17 | Sd Lizenverwertungsgesellschaft Mbh & Co. Kg | Two-stage calcination for catalyst production |
JP2008227093A (ja) | 2007-03-12 | 2008-09-25 | Tdk Corp | 積層型電子部品の製造方法 |
US20110110015A1 (en) | 2007-04-11 | 2011-05-12 | The Penn State Research Foundation | Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same |
WO2009001597A1 (ja) | 2007-06-26 | 2008-12-31 | Kyocera Corporation | 誘電体磁器およびコンデンサ |
CN101889321A (zh) | 2007-10-05 | 2010-11-17 | D·卡弗 | 高电容率低漏电的电容器和能量存储器件及其形成方法 |
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JP2010062411A (ja) * | 2008-09-05 | 2010-03-18 | Panasonic Corp | 金属化フィルムコンデンサ |
JP5206440B2 (ja) * | 2009-01-16 | 2013-06-12 | Tdk株式会社 | セラミック電子部品 |
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JP5532505B2 (ja) * | 2009-07-23 | 2014-06-25 | 日本電気硝子株式会社 | コンデンサー用ガラスフィルム |
US8263515B2 (en) | 2009-08-29 | 2012-09-11 | Fatih Dogan | Nanostructured dielectric materials for high energy density multi layer ceramic capacitors |
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JP6242337B2 (ja) * | 2011-11-16 | 2017-12-06 | スチュアート,マーティン,エー. | 高エネルギー密度蓄電装置 |
-
2012
- 2012-11-14 JP JP2014542389A patent/JP6242337B2/ja not_active Expired - Fee Related
- 2012-11-14 CN CN201280056056.8A patent/CN103946937B/zh not_active Expired - Fee Related
- 2012-11-14 US US14/357,676 patent/US9230741B2/en not_active Expired - Fee Related
- 2012-11-14 EP EP12849600.7A patent/EP2780919B1/en not_active Not-in-force
- 2012-11-14 BR BR112014011422A patent/BR112014011422A2/pt not_active IP Right Cessation
- 2012-11-14 WO PCT/US2012/064944 patent/WO2013074577A1/en active Application Filing
-
2015
- 2015-10-23 US US14/921,199 patent/US10026555B2/en active Active
-
2017
- 2017-06-27 JP JP2017125494A patent/JP6603688B2/ja not_active Expired - Fee Related
-
2018
- 2018-07-12 US US16/033,871 patent/US10636573B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017201707A (ja) | 2017-11-09 |
CN103946937A (zh) | 2014-07-23 |
JP6603688B2 (ja) | 2019-11-06 |
CN103946937B (zh) | 2017-03-15 |
US9230741B2 (en) | 2016-01-05 |
US20180323012A1 (en) | 2018-11-08 |
EP2780919A1 (en) | 2014-09-24 |
US20160042870A1 (en) | 2016-02-11 |
WO2013074577A1 (en) | 2013-05-23 |
US20140293504A1 (en) | 2014-10-02 |
EP2780919A4 (en) | 2016-02-17 |
US10026555B2 (en) | 2018-07-17 |
US10636573B2 (en) | 2020-04-28 |
JP2015502040A (ja) | 2015-01-19 |
EP2780919B1 (en) | 2017-07-19 |
JP6242337B2 (ja) | 2017-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B09B | Patent application refused [chapter 9.2 patent gazette] | ||
B12B | Appeal against refusal [chapter 12.2 patent gazette] | ||
B350 | Update of information on the portal [chapter 15.35 patent gazette] | ||
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 10A ANUIDADE. |
|
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2696 DE 06-09-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |