BR112013019766A2 - estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmos - Google Patents
estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmosInfo
- Publication number
- BR112013019766A2 BR112013019766A2 BR112013019766A BR112013019766A BR112013019766A2 BR 112013019766 A2 BR112013019766 A2 BR 112013019766A2 BR 112013019766 A BR112013019766 A BR 112013019766A BR 112013019766 A BR112013019766 A BR 112013019766A BR 112013019766 A2 BR112013019766 A2 BR 112013019766A2
- Authority
- BR
- Brazil
- Prior art keywords
- contact layer
- nanowires
- methods
- electrode structure
- nanostructure arrays
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Powder Metallurgy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161438709P | 2011-02-02 | 2011-02-02 | |
| US13/331,768 US20120152295A1 (en) | 2010-12-21 | 2011-12-20 | Arrays of filled nanostructures with protruding segments and methods thereof |
| PCT/US2012/023425 WO2012161757A1 (en) | 2011-02-02 | 2012-02-01 | Electrode structures for arrays of nanostructures and methods thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112013019766A2 true BR112013019766A2 (pt) | 2019-09-24 |
Family
ID=47217566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112013019766A BR112013019766A2 (pt) | 2011-02-02 | 2012-02-01 | estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmos |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2671255A4 (enExample) |
| JP (1) | JP2014510396A (enExample) |
| KR (1) | KR20140012073A (enExample) |
| CN (1) | CN103460387A (enExample) |
| BR (1) | BR112013019766A2 (enExample) |
| CA (1) | CA2825888A1 (enExample) |
| WO (1) | WO2012161757A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104205382A (zh) | 2012-01-25 | 2014-12-10 | 阿尔法贝特能源公司 | 用于热回收系统的模块化热电单元及其方法 |
| US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
| US9065017B2 (en) | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
| CN103579484A (zh) * | 2013-11-05 | 2014-02-12 | 姚芸 | 一种温差发电器用金属导体电极 |
| TWI570972B (zh) * | 2016-01-20 | 2017-02-11 | 財團法人工業技術研究院 | 熱電轉換裝置以及熱電轉換器 |
| JP6830587B2 (ja) * | 2016-04-11 | 2021-02-17 | 学校法人東京理科大学 | 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物 |
| WO2019003582A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | 熱電変換モジュールおよび電子部品モジュール |
| WO2019003581A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | 熱電変換モジュールおよび電子部品モジュール |
| KR102265762B1 (ko) * | 2019-11-27 | 2021-06-15 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3600486B2 (ja) * | 1999-08-24 | 2004-12-15 | セイコーインスツル株式会社 | 熱電変換素子の製造方法 |
| JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
| US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
| JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
| US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US6969679B2 (en) * | 2003-11-25 | 2005-11-29 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
| US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| WO2008060282A1 (en) * | 2006-11-17 | 2008-05-22 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| US20080178920A1 (en) * | 2006-12-28 | 2008-07-31 | Schlumberger Technology Corporation | Devices for cooling and power |
| US7905013B2 (en) * | 2007-06-04 | 2011-03-15 | Sharp Laboratories Of America, Inc. | Method for forming an iridium oxide (IrOx) nanowire neural sensor array |
| JP4925964B2 (ja) * | 2007-08-06 | 2012-05-09 | 株式会社デンソー | 積層型熱電変換素子及びその製造方法 |
| FR2923601B1 (fr) * | 2007-11-12 | 2010-01-01 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation |
| TWI401830B (zh) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | 低熱回流之熱電奈米線陣列及其製造方法 |
-
2012
- 2012-02-01 CN CN2012800167545A patent/CN103460387A/zh active Pending
- 2012-02-01 JP JP2013552585A patent/JP2014510396A/ja active Pending
- 2012-02-01 CA CA2825888A patent/CA2825888A1/en not_active Abandoned
- 2012-02-01 WO PCT/US2012/023425 patent/WO2012161757A1/en not_active Ceased
- 2012-02-01 BR BR112013019766A patent/BR112013019766A2/pt not_active IP Right Cessation
- 2012-02-01 EP EP12790253.4A patent/EP2671255A4/en not_active Withdrawn
- 2012-02-01 KR KR1020137022698A patent/KR20140012073A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012161757A1 (en) | 2012-11-29 |
| EP2671255A1 (en) | 2013-12-11 |
| CN103460387A (zh) | 2013-12-18 |
| EP2671255A4 (en) | 2015-10-28 |
| KR20140012073A (ko) | 2014-01-29 |
| JP2014510396A (ja) | 2014-04-24 |
| CA2825888A1 (en) | 2012-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |