BR112013019766A2 - estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmos - Google Patents
estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmosInfo
- Publication number
- BR112013019766A2 BR112013019766A2 BR112013019766A BR112013019766A BR112013019766A2 BR 112013019766 A2 BR112013019766 A2 BR 112013019766A2 BR 112013019766 A BR112013019766 A BR 112013019766A BR 112013019766 A BR112013019766 A BR 112013019766A BR 112013019766 A2 BR112013019766 A2 BR 112013019766A2
- Authority
- BR
- Brazil
- Prior art keywords
- contact layer
- nanowires
- methods
- electrode structure
- nanostructure arrays
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000002086 nanomaterial Substances 0.000 title abstract 2
- 238000003491 array Methods 0.000 title 1
- 239000002070 nanowire Substances 0.000 abstract 5
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmos um dispositivo termoelétrico e métodos para o mesmo. o dispositivo termoelétrico inclui nanofios, uma camada de contato, e uma derivação. cada um dos nanofios inclui uma primeira extremidade e uma segunda extremidade. a camada de contato acopla eletricamente os nanofios através pelo menos da primeira extremidade de cada um dos nanofios. a derivação é acoplada eletricamente à camada de contato. todos os nanofios são substancialmente paralelos uns aos outros. uma primeira resistividade de contato entre a primeira extremidade e a camada de contato varia de 10^ -13^ <87>-m^2^ a 10^ -7 <87>-m<2>. uma primeira função de travalho entre a primeira extremidade e a camada de contato é menor do que 0,8 elétron volts. a camada de contato é associada a uma primeira resistência térmica que varia de 10^ -2^ k/w a 10^ 10^ k/w.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161438709P | 2011-02-02 | 2011-02-02 | |
US13/331,768 US20120152295A1 (en) | 2010-12-21 | 2011-12-20 | Arrays of filled nanostructures with protruding segments and methods thereof |
PCT/US2012/023425 WO2012161757A1 (en) | 2011-02-02 | 2012-02-01 | Electrode structures for arrays of nanostructures and methods thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013019766A2 true BR112013019766A2 (pt) | 2019-09-24 |
Family
ID=47217566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013019766A BR112013019766A2 (pt) | 2011-02-02 | 2012-02-01 | estrutura de eletrodos para arranjos de nanoestrutura e métodos para os mesmos |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2671255A4 (pt) |
JP (1) | JP2014510396A (pt) |
KR (1) | KR20140012073A (pt) |
CN (1) | CN103460387A (pt) |
BR (1) | BR112013019766A2 (pt) |
CA (1) | CA2825888A1 (pt) |
WO (1) | WO2012161757A1 (pt) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2013212087A1 (en) | 2012-01-25 | 2014-08-07 | Alphabet Energy, Inc. | Modular thermoelectric units for heat recovery systems and methods thereof |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
US9065017B2 (en) | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
CN103579484A (zh) * | 2013-11-05 | 2014-02-12 | 姚芸 | 一种温差发电器用金属导体电极 |
TWI570972B (zh) * | 2016-01-20 | 2017-02-11 | 財團法人工業技術研究院 | 熱電轉換裝置以及熱電轉換器 |
JP6830587B2 (ja) * | 2016-04-11 | 2021-02-17 | 学校法人東京理科大学 | 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物 |
WO2019003582A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | 熱電変換モジュールおよび電子部品モジュール |
WO2019003581A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | 熱電変換モジュールおよび電子部品モジュール |
KR102265762B1 (ko) * | 2019-11-27 | 2021-06-15 | 한국세라믹기술원 | 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3600486B2 (ja) * | 1999-08-24 | 2004-12-15 | セイコーインスツル株式会社 | 熱電変換素子の製造方法 |
MXPA03008935A (es) * | 2001-03-30 | 2004-06-30 | Univ California | Metodos de fabricacion de nanoestructuras y nanocables y dispositivos fabricados a partir de ellos. |
US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
US6969679B2 (en) * | 2003-11-25 | 2005-11-29 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
WO2008060282A1 (en) * | 2006-11-17 | 2008-05-22 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
US20080178920A1 (en) * | 2006-12-28 | 2008-07-31 | Schlumberger Technology Corporation | Devices for cooling and power |
US7905013B2 (en) * | 2007-06-04 | 2011-03-15 | Sharp Laboratories Of America, Inc. | Method for forming an iridium oxide (IrOx) nanowire neural sensor array |
JP4925964B2 (ja) * | 2007-08-06 | 2012-05-09 | 株式会社デンソー | 積層型熱電変換素子及びその製造方法 |
FR2923601B1 (fr) * | 2007-11-12 | 2010-01-01 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation |
TWI401830B (zh) * | 2008-12-31 | 2013-07-11 | Ind Tech Res Inst | 低熱回流之熱電奈米線陣列及其製造方法 |
-
2012
- 2012-02-01 WO PCT/US2012/023425 patent/WO2012161757A1/en active Application Filing
- 2012-02-01 KR KR1020137022698A patent/KR20140012073A/ko not_active Application Discontinuation
- 2012-02-01 CN CN2012800167545A patent/CN103460387A/zh active Pending
- 2012-02-01 EP EP12790253.4A patent/EP2671255A4/en not_active Withdrawn
- 2012-02-01 JP JP2013552585A patent/JP2014510396A/ja active Pending
- 2012-02-01 CA CA2825888A patent/CA2825888A1/en not_active Abandoned
- 2012-02-01 BR BR112013019766A patent/BR112013019766A2/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN103460387A (zh) | 2013-12-18 |
EP2671255A4 (en) | 2015-10-28 |
JP2014510396A (ja) | 2014-04-24 |
CA2825888A1 (en) | 2012-11-29 |
EP2671255A1 (en) | 2013-12-11 |
KR20140012073A (ko) | 2014-01-29 |
WO2012161757A1 (en) | 2012-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |