BR0110006A - Método de empacotamento de dispositivos optoeletrÈnicos, dispositivo optoeletrÈnico e dispotivo optoeletÈnico de circuito integrado - Google Patents

Método de empacotamento de dispositivos optoeletrÈnicos, dispositivo optoeletrÈnico e dispotivo optoeletÈnico de circuito integrado

Info

Publication number
BR0110006A
BR0110006A BR0110006-8A BR0110006A BR0110006A BR 0110006 A BR0110006 A BR 0110006A BR 0110006 A BR0110006 A BR 0110006A BR 0110006 A BR0110006 A BR 0110006A
Authority
BR
Brazil
Prior art keywords
optoelectronic
integrated circuit
devices
optoelectronic device
packaging method
Prior art date
Application number
BR0110006-8A
Other languages
English (en)
Inventor
Yue Lui
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of BR0110006A publication Critical patent/BR0110006A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Abstract

"MéTODO DE EMPACOTAMENTO DE DISPOSITIVOS OPTOELETRÈNICOS, DISPOSITIVO OPTOELETRÈNICO E DISPOSITIVO OPTOELETRÈNICO DE CIRCUITO INTEGRADO". Um dispositivo optoeletrónico de circuito integrado inclui dispositivos superires emissores/detectores sobre um substrato. Os dispositivos superiores emissores/detectores possuem lado superior e inferior. Os dispositivos superiores emissores/detectores são capazes de emitir e detectar feixe de luz proveniente do lado superior, e possuem blocos de contato sobre este lado. Um superestrato oticamente transparente é fixado ao lado superior. Dispositivos micro-óticos tais como lentes podem ser fixadas ao superestrato. Os blocos de contato são fixados aos blocos de encaixe de um chip de circuito integrado para produzir um circuito optoeletrónico integrado.
BR0110006-8A 2000-04-12 2001-04-12 Método de empacotamento de dispositivos optoeletrÈnicos, dispositivo optoeletrÈnico e dispotivo optoeletÈnico de circuito integrado BR0110006A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/547,538 US6780661B1 (en) 2000-04-12 2000-04-12 Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits
PCT/US2001/011996 WO2001080285A2 (en) 2000-04-12 2001-04-12 Top illuminated opto-electronic devices integrated with micro-optics and electronic integrated circuits

Publications (1)

Publication Number Publication Date
BR0110006A true BR0110006A (pt) 2004-03-09

Family

ID=24185045

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0110006-8A BR0110006A (pt) 2000-04-12 2001-04-12 Método de empacotamento de dispositivos optoeletrÈnicos, dispositivo optoeletrÈnico e dispotivo optoeletÈnico de circuito integrado

Country Status (14)

Country Link
US (3) US6780661B1 (pt)
EP (1) EP1273079A2 (pt)
JP (1) JP2003531486A (pt)
KR (1) KR20020089459A (pt)
CN (1) CN1436387A (pt)
AU (1) AU2001257028A1 (pt)
BR (1) BR0110006A (pt)
CA (1) CA2405859A1 (pt)
CZ (1) CZ20023727A3 (pt)
HU (1) HUP0300608A2 (pt)
IL (1) IL152265A0 (pt)
MX (1) MXPA02010112A (pt)
PL (1) PL357818A1 (pt)
WO (1) WO2001080285A2 (pt)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780661B1 (en) * 2000-04-12 2004-08-24 Finisar Corporation Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
US6911392B2 (en) 2001-08-24 2005-06-28 Schott Glas Process for making contact with and housing integrated circuits
US7343535B2 (en) * 2002-02-06 2008-03-11 Avago Technologies General Ip Dte Ltd Embedded testing capability for integrated serializer/deserializers
US6872983B2 (en) * 2002-11-11 2005-03-29 Finisar Corporation High speed optical transceiver package using heterogeneous integration
US7180149B2 (en) 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
US6953990B2 (en) * 2003-09-19 2005-10-11 Agilent Technologies, Inc. Wafer-level packaging of optoelectronic devices
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US20050063648A1 (en) * 2003-09-19 2005-03-24 Wilson Robert Edward Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US7520679B2 (en) * 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
US6985645B2 (en) * 2003-09-24 2006-01-10 International Business Machines Corporation Apparatus and methods for integrally packaging optoelectronic devices, IC chips and optical transmission lines
US20050213995A1 (en) * 2004-03-26 2005-09-29 Myunghee Lee Low power and low jitter optical receiver for fiber optic communication link
JP4544892B2 (ja) * 2004-03-30 2010-09-15 三洋電機株式会社 半導体レーザ装置およびその製造方法
JP4581759B2 (ja) * 2005-03-14 2010-11-17 セイコーエプソン株式会社 発光装置、画像形成装置および電子機器
CN100444381C (zh) * 2006-10-13 2008-12-17 中国科学院上海技术物理研究所 背向集成微透镜红外焦平面探测器及微透镜的制备方法
US7623560B2 (en) * 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
KR101426285B1 (ko) * 2008-01-09 2014-08-05 삼성전자주식회사 광 송수신 소자 및 그 제조방법
EP2302327B1 (en) * 2009-09-25 2020-02-26 Nxp B.V. Sensor
JP5659903B2 (ja) * 2011-03-29 2015-01-28 ソニー株式会社 発光素子・受光素子組立体及びその製造方法
US8675706B2 (en) * 2011-12-24 2014-03-18 Princeton Optronics Inc. Optical illuminator
US9570648B2 (en) * 2012-06-15 2017-02-14 Intersil Americas LLC Wafer level optical proximity sensors and systems including wafer level optical proximity sensors
TWM448798U (zh) * 2012-08-10 2013-03-11 Meicer Semiconductor Inc 光學元件封裝模組
US9304272B2 (en) 2013-03-15 2016-04-05 Compass Electro Optical Systems Ltd. EO device for processing data signals
US9721837B2 (en) 2015-04-16 2017-08-01 Intersil Americas LLC Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same
CN106847936B (zh) * 2016-12-07 2019-01-01 清华大学 基于金属键合的光电器件封装结构及其制造方法
KR20190097127A (ko) * 2016-12-16 2019-08-20 베링거잉겔하임베트메디카게엠베하 사용자에게 정보를 제공하는 패키지 상의 라이트 또는 조명 부재
US10542921B2 (en) 2017-04-03 2020-01-28 Medtronic, Inc. Hermetically-sealed package and method of forming same
US10463285B2 (en) 2017-04-03 2019-11-05 Medtronic, Inc. Hermetically-sealed package and method of forming same
JP2019134019A (ja) * 2018-01-30 2019-08-08 セイコーエプソン株式会社 発光装置
US11067884B2 (en) * 2018-12-26 2021-07-20 Apple Inc. Through-display optical transmission, reception, or sensing through micro-optic elements
US10838556B2 (en) 2019-04-05 2020-11-17 Apple Inc. Sensing system for detection of light incident to a light emitting layer of an electronic device display
US11527582B1 (en) 2019-09-24 2022-12-13 Apple Inc. Display stack with integrated photodetectors
US11611058B2 (en) 2019-09-24 2023-03-21 Apple Inc. Devices and systems for under display image sensor
US11592873B2 (en) 2020-02-14 2023-02-28 Apple Inc. Display stack topologies for under-display optical transceivers
US11295664B2 (en) 2020-03-11 2022-04-05 Apple Inc. Display-synchronized optical emitters and transceivers
CN115552299A (zh) 2020-04-13 2022-12-30 艾维森纳科技有限公司 光学增强的多芯片封装
US11327237B2 (en) 2020-06-18 2022-05-10 Apple Inc. Display-adjacent optical emission or reception using optical fibers
US11487859B2 (en) 2020-07-31 2022-11-01 Apple Inc. Behind display polarized optical transceiver
WO2022047323A1 (en) * 2020-08-28 2022-03-03 Avicenatech Corp. Hybrid integration of microled interconnects with ics
US11839133B2 (en) 2021-03-12 2023-12-05 Apple Inc. Organic photodetectors for in-cell optical sensing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237434A (en) * 1991-11-05 1993-08-17 Mcnc Microelectronic module having optical and electrical interconnects
US5371822A (en) * 1992-06-09 1994-12-06 Digital Equipment Corporation Method of packaging and assembling opto-electronic integrated circuits
FR2719388B1 (fr) * 1994-05-02 1996-07-19 Frederic Ghirardi Dispositif semi-conducteur optoélectronique comportant un adaptateur de mode intégré.
JP3236774B2 (ja) 1996-02-16 2001-12-10 日本電信電話株式会社 半導体集積回路
US5838703A (en) 1996-09-30 1998-11-17 Motorola, Inc. Semiconductor laser package with power monitoring system and optical element
US5905750A (en) 1996-10-15 1999-05-18 Motorola, Inc. Semiconductor laser package and method of fabrication
JPH10335383A (ja) 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH11168262A (ja) 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置
US6780661B1 (en) * 2000-04-12 2004-08-24 Finisar Corporation Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports

Also Published As

Publication number Publication date
AU2001257028A1 (en) 2001-10-30
US6780661B1 (en) 2004-08-24
IL152265A0 (en) 2003-05-29
PL357818A1 (en) 2004-07-26
US6998646B2 (en) 2006-02-14
HUP0300608A2 (hu) 2003-07-28
US6586776B1 (en) 2003-07-01
WO2001080285A3 (en) 2002-02-07
CZ20023727A3 (cs) 2003-04-16
MXPA02010112A (es) 2003-03-10
JP2003531486A (ja) 2003-10-21
CA2405859A1 (en) 2001-10-25
US20030089902A1 (en) 2003-05-15
WO2001080285A2 (en) 2001-10-25
EP1273079A2 (en) 2003-01-08
CN1436387A (zh) 2003-08-13
KR20020089459A (ko) 2002-11-29

Similar Documents

Publication Publication Date Title
BR0110006A (pt) Método de empacotamento de dispositivos optoeletrÈnicos, dispositivo optoeletrÈnico e dispotivo optoeletÈnico de circuito integrado
TW200505056A (en) Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
DE602004024525D1 (de) Sensor mit polymerkomponenten
DE69127677T2 (de) Lichtemittierende Halbleiterdioden
WO2005034198A3 (en) Methods and apparatus for an led light engine
KR900070903A (ko) 광 전달 조립체
GB2389194B (en) Light level
TW200605380A (en) Optical communication module
DE19938053B4 (de) Hochstabile optische Einkapselung und Packung für lichtemittierende Dioden
WO2003021329A3 (en) Solid-state light source
TW200520260A (en) Light emitting devices with improved light extraction efficiency
DE69423176D1 (de) Mehrere leuchtemittierende Dioden enthaltender Modul
TW200721522A (en) Photodiode device and photodiode array for optical sensor using the same
FR2651605B1 (fr) Dispositif emetteur de lumiere a semiconducteur.
DE60002832D1 (de) Mit einem erleuchteten zielpunkt versehenes optisches visier
WO2001057572A3 (de) Elektrooptisches sende- /empfangsmodul und verfahren zu seiner herstellung
DE60304759D1 (de) Oberflächenemittierendes lichtemittierendes Halbleiterbauteil und Verfahren zu dessen Herstellung, Optisches Modul und Lichtübertragungs-Vorrichtung
NO165515C (no) Monteringssokkel for optisk element.
DE60013039D1 (de) Lichtemittierende Halbleitervorrichtung
ATE334031T1 (de) Lichtsignal
WO2004073122A3 (en) Optical power monitoring for a semiconductor laser device
TWI447357B (zh) 反射式光編碼器
DE69017301D1 (de) Halbleiter lichtemittierende Vorrichtung.
US4591706A (en) Photodetector
DE60222736D1 (de) Optisches Modul mit Monitor-Photodiode

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]