BR0103203A - Formador de imagem tendo fotodiodos com porta e método para fabricação do mesmo - Google Patents
Formador de imagem tendo fotodiodos com porta e método para fabricação do mesmoInfo
- Publication number
- BR0103203A BR0103203A BR0103203-8A BR0103203A BR0103203A BR 0103203 A BR0103203 A BR 0103203A BR 0103203 A BR0103203 A BR 0103203A BR 0103203 A BR0103203 A BR 0103203A
- Authority
- BR
- Brazil
- Prior art keywords
- photodiode
- door
- field plate
- pixels
- side wall
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000003384 imaging method Methods 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Patente de Invenção: "FORMADOR DE IMAGEM TENDO FOTODIODOS COM PORTA E MéTODO PARA FABRICAçãO DO MESMO". Formador de imagem de estado sólido é proporcionado, o qual compreende um conjunto de formação de imagem de fotodiodos com porta. O formador de imagem compreende uma pluralidade de pixels de fotossensores dispostos em um conjunto de pixels e cada um dos pixels dos fotossensores inclui um fotodiodo tendo uma parede lateral, a parede lateral tendo uma camada dielétrica de porta disposta sobre ela e uma placa de campo disposta em torno do corpo do fotodiodo. A placa de campo compreende silício amorfo disposto na camada dielétrica de porta e se estende substancial e completamente em torno da parede lateral do referido fotodiodo. A placa de campo é acoplada eletricamente ao eletrodo comum do conjunto de formação de imagem de modo que a placa de campo cria uma campo elétrico em torno do corpo do fotodiodo em correspondência com o potencial do referido eletrodo comum. Um método de fabricação do conjunto de fotodiodo com porta também é proporcionado.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/632,106 US6724010B1 (en) | 2000-08-03 | 2000-08-03 | Solid state imager having gated photodiodes and method for making same |
Publications (2)
Publication Number | Publication Date |
---|---|
BR0103203A true BR0103203A (pt) | 2002-03-26 |
BRPI0103203B1 BRPI0103203B1 (pt) | 2016-12-06 |
Family
ID=24534101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0103203A BRPI0103203B1 (pt) | 2000-08-03 | 2001-08-03 | formador de imagem tendo fotodiodos com porta e método para fabricação do mesmo |
Country Status (6)
Country | Link |
---|---|
US (1) | US6724010B1 (pt) |
EP (1) | EP1179852B1 (pt) |
JP (1) | JP4600964B2 (pt) |
BR (1) | BRPI0103203B1 (pt) |
DE (1) | DE60127047T2 (pt) |
SG (1) | SG90258A1 (pt) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007528116A (ja) * | 2003-05-09 | 2007-10-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | フラットパネルx線検出器 |
US7030032B2 (en) * | 2003-05-13 | 2006-04-18 | Raytheon Company | Photodiode passivation technique |
KR100556349B1 (ko) * | 2003-10-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | 액정표시소자용 어레이 기판의 제조방법 |
US6982176B2 (en) | 2003-10-30 | 2006-01-03 | General Electric Company | Method for monitoring production of pixel detectors and detectors produced thereby |
US7259377B2 (en) * | 2005-12-15 | 2007-08-21 | General Electric Company | Diode design to reduce the effects of radiation damage |
US7208742B1 (en) * | 2005-12-15 | 2007-04-24 | General Electric Company | X-ray detector with radiation hard photodiode design |
JP2008244251A (ja) * | 2007-03-28 | 2008-10-09 | Toshiba Corp | アモルファスシリコンフォトダイオード及びその製造方法ならびにx線撮像装置 |
TWI355106B (en) * | 2007-05-07 | 2011-12-21 | Chunghwa Picture Tubes Ltd | Organic photodetector and fabricating method of or |
US20090108385A1 (en) * | 2007-10-29 | 2009-04-30 | Micron Technology, Inc. | Method and apparatus for improving crosstalk and sensitivity in an imager |
US7897929B2 (en) * | 2007-12-06 | 2011-03-01 | General Electric Company | Reduced cost pixel design for flat panel x-ray imager |
JP5461719B2 (ja) * | 2008-01-29 | 2014-04-02 | 富士フイルム株式会社 | 電磁波検出素子 |
JP5185013B2 (ja) * | 2008-01-29 | 2013-04-17 | 富士フイルム株式会社 | 電磁波検出素子 |
US7902512B1 (en) * | 2009-12-04 | 2011-03-08 | Carestream Health, Inc. | Coplanar high fill factor pixel architecture |
US10396229B2 (en) * | 2011-05-09 | 2019-08-27 | International Business Machines Corporation | Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal |
KR20150034947A (ko) * | 2013-09-27 | 2015-04-06 | 삼성디스플레이 주식회사 | 표시 장치의 금속 배선, 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법 |
US9461072B2 (en) * | 2013-12-25 | 2016-10-04 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display array substrates and a method for manufacturing the same |
CN106935601B (zh) * | 2017-03-13 | 2019-08-23 | 京东方科技集团股份有限公司 | 半导体器件、阵列基板和半导体器件的制造方法 |
CN109166943B (zh) * | 2018-09-19 | 2021-01-26 | 京东方科技集团股份有限公司 | 探测基板及其制造方法、探测器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
US4729005A (en) | 1985-04-29 | 1988-03-01 | General Electric Company | Method and apparatus for improved metal-insulator-semiconductor device operation |
US4751560A (en) * | 1986-02-24 | 1988-06-14 | Santa Barbara Research Center | Infrared photodiode array |
US4857979A (en) * | 1988-06-20 | 1989-08-15 | Ford Aerospace & Communications Corporation | Platinum silicide imager |
JP2830177B2 (ja) * | 1989-10-04 | 1998-12-02 | 富士ゼロックス株式会社 | 画像読取装置 |
JPH03212975A (ja) * | 1990-01-17 | 1991-09-18 | Fuji Xerox Co Ltd | イメージセンサ |
JPH04154167A (ja) * | 1990-10-18 | 1992-05-27 | Fuji Xerox Co Ltd | 半導体装置 |
JPH06314813A (ja) * | 1993-03-04 | 1994-11-08 | Sumitomo Electric Ind Ltd | pin型受光素子、その製造方法及び光電子集積回路 |
US5399884A (en) | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
US5435608A (en) | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
US5663577A (en) | 1996-03-01 | 1997-09-02 | General Electric Company | Solid state imager array with address line spacer structure |
US5777355A (en) * | 1996-12-23 | 1998-07-07 | General Electric Company | Radiation imager with discontinuous dielectric |
WO1998032173A1 (en) * | 1997-01-17 | 1998-07-23 | General Electric Company | Corrosion resistant imager |
JP4011734B2 (ja) * | 1998-06-02 | 2007-11-21 | キヤノン株式会社 | 2次元光センサ、それを用いた放射線検出装置及び放射線診断システム |
US6326649B1 (en) * | 1999-01-13 | 2001-12-04 | Agere Systems, Inc. | Pin photodiode having a wide bandwidth |
US6384461B1 (en) * | 1999-10-15 | 2002-05-07 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
US6300648B1 (en) * | 1999-12-28 | 2001-10-09 | Xerox Corporation | Continuous amorphous silicon layer sensors using sealed metal back contact |
-
2000
- 2000-08-03 US US09/632,106 patent/US6724010B1/en not_active Expired - Lifetime
-
2001
- 2001-07-26 DE DE60127047T patent/DE60127047T2/de not_active Expired - Lifetime
- 2001-07-26 EP EP01306424A patent/EP1179852B1/en not_active Expired - Lifetime
- 2001-08-01 SG SG200104636A patent/SG90258A1/en unknown
- 2001-08-02 JP JP2001234328A patent/JP4600964B2/ja not_active Expired - Fee Related
- 2001-08-03 BR BRPI0103203A patent/BRPI0103203B1/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2002118790A (ja) | 2002-04-19 |
SG90258A1 (en) | 2002-07-23 |
EP1179852B1 (en) | 2007-03-07 |
JP4600964B2 (ja) | 2010-12-22 |
BRPI0103203B1 (pt) | 2016-12-06 |
EP1179852A3 (en) | 2003-08-20 |
EP1179852A2 (en) | 2002-02-13 |
DE60127047T2 (de) | 2007-12-13 |
DE60127047D1 (de) | 2007-04-19 |
US6724010B1 (en) | 2004-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 06/12/2016, OBSERVADAS AS CONDICOES LEGAIS. |
|
B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time |
Free format text: REFERENTE A 20A ANUIDADE. |
|
B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |
Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2631 DE 08-06-2021 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |