BE868653A - Procede de fabrication de comprimes de nitrure de bore cubique a partir de nitrure de bore hexagonal - Google Patents

Procede de fabrication de comprimes de nitrure de bore cubique a partir de nitrure de bore hexagonal

Info

Publication number
BE868653A
BE868653A BE189003A BE189003A BE868653A BE 868653 A BE868653 A BE 868653A BE 189003 A BE189003 A BE 189003A BE 189003 A BE189003 A BE 189003A BE 868653 A BE868653 A BE 868653A
Authority
BE
Belgium
Prior art keywords
boron nitride
tablets
manufacturing cubic
cubic boron
hexagonal
Prior art date
Application number
BE189003A
Other languages
English (en)
French (fr)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/812,283 external-priority patent/US4188194A/en
Application filed by Gen Electric filed Critical Gen Electric
Publication of BE868653A publication Critical patent/BE868653A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/0645Boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/066Boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/068Crystal growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Compositions Of Oxide Ceramics (AREA)
BE189003A 1977-07-01 1978-06-30 Procede de fabrication de comprimes de nitrure de bore cubique a partir de nitrure de bore hexagonal BE868653A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/812,283 US4188194A (en) 1976-10-29 1977-07-01 Direct conversion process for making cubic boron nitride from pyrolytic boron nitride

Publications (1)

Publication Number Publication Date
BE868653A true BE868653A (fr) 1978-10-16

Family

ID=25209106

Family Applications (1)

Application Number Title Priority Date Filing Date
BE189003A BE868653A (fr) 1977-07-01 1978-06-30 Procede de fabrication de comprimes de nitrure de bore cubique a partir de nitrure de bore hexagonal

Country Status (20)

Country Link
JP (1) JPS5433510A (de)
AT (1) AT395144B (de)
AU (1) AU524584B2 (de)
BE (1) BE868653A (de)
BR (1) BR7804310A (de)
CH (1) CH644091A5 (de)
DE (1) DE2828742A1 (de)
DK (1) DK298578A (de)
ES (1) ES471333A1 (de)
FR (1) FR2395948A1 (de)
GB (1) GB2002333B (de)
IE (1) IE47548B1 (de)
IL (1) IL54939A0 (de)
IN (1) IN150013B (de)
IT (1) IT1096850B (de)
MX (1) MX149093A (de)
NL (1) NL186506C (de)
NO (1) NO153603C (de)
SE (1) SE447241B (de)
ZA (1) ZA783449B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289503A (en) * 1979-06-11 1981-09-15 General Electric Company Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst
DE3125484A1 (de) * 1981-06-29 1983-03-17 Belorusskij politechničeskij institut, Minsk Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides
DE3229846C2 (de) * 1982-08-11 1984-05-24 Dr. Johannes Heidenhain Gmbh, 8225 Traunreut Längen- oder Winkelmeßeinrichtung
EP0194358B1 (de) * 1985-01-11 1991-10-23 Sumitomo Electric Industries, Ltd. Wärmesenke unter Verwendung eines gesinterten Körpers mit hoher Wärmeleitfähigkeit und Verfahren zu ihrer Herstellung
EP0221531A3 (de) * 1985-11-06 1992-02-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren
JPS62108717A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108711A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108716A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108713A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108714A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108715A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
DE3774744D1 (de) * 1986-04-09 1992-01-09 Sumitomo Electric Industries Verfahren zur herstellung von kompakten sinterkoerpern aus kubischem bornitrid.
JPH0339795U (de) * 1989-04-19 1991-04-17
US5015265A (en) * 1989-06-14 1991-05-14 General Electric Company Process for making cubic boron nitride from coated hexagonal boron nitride, and abrasive particles and articles made therefrom
JPH07104739A (ja) * 1993-10-01 1995-04-21 Maruyasu Kanagata:Kk 大正琴
JPH10158065A (ja) * 1996-11-28 1998-06-16 Sumitomo Electric Ind Ltd 立方晶窒化ホウ素焼結体およびその製造方法
CN101965643A (zh) * 2007-12-31 2011-02-02 拉斐尔·纳坦·克雷曼 高效率硅基太阳能电池
US20090169781A1 (en) * 2007-12-31 2009-07-02 Marc Schaepkens Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
EP2752398B1 (de) 2011-08-30 2019-02-06 Sumitomo Electric Industries, Ltd. Polykristalliner stoff mit kubischem bornitridkomplex, herstellungsverfahren dafür, schneidwerkzeug, drahtziehstein und schleifwerkzeug
JP6159064B2 (ja) * 2012-08-08 2017-07-05 住友電気工業株式会社 立方晶窒化ホウ素複合多結晶体及び切削工具、線引きダイス、ならびに研削工具
JP5929655B2 (ja) * 2012-09-11 2016-06-08 住友電気工業株式会社 立方晶窒化ホウ素複合多結晶体およびその製造方法、切削工具、ならびに耐摩工具
JP6291995B2 (ja) 2014-04-18 2018-03-14 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6447197B2 (ja) 2015-02-04 2019-01-09 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6447205B2 (ja) 2015-02-09 2019-01-09 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6978445B2 (ja) * 2016-06-29 2021-12-08 スミス インターナショナル インコーポレイテッド 立方プレスによるバインダーレスcBN焼結
US11453589B2 (en) 2016-10-06 2022-09-27 Sumitomo Electric Industries, Ltd. Method of producing boron nitride polycrystal, boron nitride polycrystal, cutting tool, wear-resisting tool, and grinding tool
US11046581B2 (en) 2018-06-18 2021-06-29 Sumitomo Electric Hardmetal Corp. Polycrystalline cubic boron nitride and method for manufacturing the same
EP3858803A4 (de) * 2018-09-27 2022-05-11 Sumitomo Electric Hardmetal Corp. Kubischer polykristalliner bornitridkörper und verfahren zur herstellung davon
WO2020174923A1 (ja) * 2019-02-28 2020-09-03 住友電工ハードメタル株式会社 立方晶窒化硼素多結晶体及びその製造方法
WO2020174922A1 (ja) * 2019-02-28 2020-09-03 住友電工ハードメタル株式会社 立方晶窒化硼素多結晶体及びその製造方法
WO2020175647A1 (ja) * 2019-02-28 2020-09-03 住友電工ハードメタル株式会社 立方晶窒化硼素多結晶体及びその製造方法
WO2023027122A1 (ja) * 2021-08-26 2023-03-02 デンカ株式会社 セラミックス板の製造方法、セラミックス板、複合シート、及び積層基板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578403A (en) * 1968-07-05 1971-05-11 Union Carbide Corp Recrystallization of pyrolytic boron nitride
DE2111180C3 (de) * 1971-03-09 1973-10-11 Institut Fisiki Twojordowo Tela I Poluprowodnikow Akademii Nauk Belorusskoj Ssr, Minsk (Sowjetunion) Verfahren zur Herstellung von kubi schem Bornitrid
ZA724056B (en) * 1971-07-01 1973-03-28 Gen Electric Catalyst systems for synthesis of cubic boron nitride
JPS5238049B2 (de) * 1972-02-04 1977-09-27
JPS5647124B2 (de) * 1973-06-26 1981-11-07
IE39632B1 (en) * 1973-09-06 1978-11-22 Gen Electric Production of high-density boron nitride
JPS5760676B2 (de) * 1973-09-28 1982-12-21 Tokyo Shibaura Electric Co
JPS5061413A (de) * 1973-10-01 1975-05-27
JPS5750677Y2 (de) * 1973-12-05 1982-11-05
JPS5116196A (ja) * 1974-07-29 1976-02-09 Hitachi Ltd Kokanyorotsukakuketsusokusochi

Also Published As

Publication number Publication date
GB2002333A (en) 1979-02-21
AU3761978A (en) 1980-01-03
AU524584B2 (en) 1982-09-23
NL7807196A (nl) 1979-01-03
IE781320L (en) 1979-01-01
DE2828742C2 (de) 1989-02-02
IT1096850B (it) 1985-08-26
MX149093A (es) 1983-08-24
IT7825186A0 (it) 1978-06-30
IE47548B1 (en) 1984-04-18
DK298578A (da) 1979-01-02
CH644091A5 (de) 1984-07-13
NO153603B (no) 1986-01-13
ATA477478A (de) 1992-02-15
BR7804310A (pt) 1979-04-17
JPS63394B2 (de) 1988-01-06
SE447241B (sv) 1986-11-03
DE2828742A1 (de) 1979-03-01
ZA783449B (en) 1980-04-30
IN150013B (de) 1982-06-26
FR2395948B1 (de) 1984-03-23
ES471333A1 (es) 1979-10-01
NL186506B (nl) 1990-07-16
IL54939A0 (en) 1978-08-31
NL186506C (nl) 1990-12-17
AT395144B (de) 1992-09-25
GB2002333B (en) 1982-05-26
NO782272L (no) 1979-01-03
FR2395948A1 (fr) 1979-01-26
NO153603C (no) 1986-04-23
JPS5433510A (en) 1979-03-12

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: GENERAL ELECTRIC CY

Effective date: 19980630