BE846557A - Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant - Google Patents

Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant

Info

Publication number
BE846557A
BE846557A BE170910A BE170910A BE846557A BE 846557 A BE846557 A BE 846557A BE 170910 A BE170910 A BE 170910A BE 170910 A BE170910 A BE 170910A BE 846557 A BE846557 A BE 846557A
Authority
BE
Belgium
Prior art keywords
doping concentration
single crystals
semiconductor single
preparing semiconductor
adjustable doping
Prior art date
Application number
BE170910A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE846557A publication Critical patent/BE846557A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE170910A 1975-09-25 1976-09-24 Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant BE846557A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752542867 DE2542867A1 (de) 1975-09-25 1975-09-25 Verfahren zur herstellung von halbleitereinkristallen mit einstellbarer dotierstoffkonzentration

Publications (1)

Publication Number Publication Date
BE846557A true BE846557A (fr) 1977-03-24

Family

ID=5957446

Family Applications (1)

Application Number Title Priority Date Filing Date
BE170910A BE846557A (fr) 1975-09-25 1976-09-24 Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant

Country Status (7)

Country Link
JP (1) JPS5240966A (xx)
BE (1) BE846557A (xx)
DE (1) DE2542867A1 (xx)
DK (1) DK381276A (xx)
FR (1) FR2325425A1 (xx)
IT (1) IT1066181B (xx)
NL (1) NL7609300A (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
DE19936838A1 (de) * 1999-08-05 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines mit Stickstoff dotierten Einkristalls
EP1282733A1 (en) * 2000-05-10 2003-02-12 MEMC Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing process
US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

Also Published As

Publication number Publication date
NL7609300A (nl) 1977-03-29
IT1066181B (it) 1985-03-04
DK381276A (da) 1977-03-26
FR2325425A1 (fr) 1977-04-22
DE2542867A1 (de) 1977-03-31
JPS5240966A (en) 1977-03-30

Similar Documents

Publication Publication Date Title
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
FR2295138A1 (fr) Procede de preparation de bis-acetals de p-benzoquinones
BE831309A (fr) Procede de preparation de composes thiazolazo
BE829355A (fr) Procede de preparation de polysocyanates
BE846557A (fr) Procede de preparation de monocristaux semiconducteurs a concentration reglable en dopant
FR2276328A1 (fr) Procede de preparation de terpolymeres cristallins d'ethene, de butene-(1) et de butene-(2)
BE831648A (fr) Procede de preparation de noenomycine
BE813169A (fr) Procede de preparation des 3-fluorocephalosporines
FR2282429A1 (fr) Procede de preparation de 7b-acylamino-7a-alcoxycephalosporines
BE824612A (fr) Procede de preparation de 3-aminophenols
FR2280375A1 (fr) Procede de preparation de penicilines
FR2289536A1 (fr) Procede de preparation de c
BE845696A (fr) Procede de dopage de barreaux semi-conducteurs
BE837184A (fr) Procede de preparation du nitrure de bore hexagonal
BE824573A (fr) Procede de preparation de la trimethylbenzoquinone
FR2333804A1 (fr) Procede de preparation de derives 3-methylenecepham
BE837370A (fr) Procede de preparation de monocristaux de silicium dopes par activation avec des neutrons
RO72840A (ro) Procedeu de preparare a unor difosforati ciclici
FR2301510A1 (fr) Procede de preparation de dihalovinylcyclopropanecarboxylates
FR2293420A1 (fr) Procede de preparation de 4-hydroxy-3-methoxy-phenylacetonitrile
BE825768A (fr) Procede de preparation de dithiodianilines
BE830862A (fr) Procede de preparation de n,n-dialkylxylene-diamines
FR2276305A1 (fr) Procede de preparation de composes heterocycliques
BE840423A (fr) Procede de preparation de supports de magnetogramme
FR2310997A1 (fr) Procede de preparation de la diphenylamine