BE830336A - Circuit integre bipolaire a jonctions d'isolement et procede de fabrication - Google Patents

Circuit integre bipolaire a jonctions d'isolement et procede de fabrication

Info

Publication number
BE830336A
BE830336A BE157413A BE157413A BE830336A BE 830336 A BE830336 A BE 830336A BE 157413 A BE157413 A BE 157413A BE 157413 A BE157413 A BE 157413A BE 830336 A BE830336 A BE 830336A
Authority
BE
Belgium
Prior art keywords
integrated circuit
manufacturing process
bipolar integrated
isolation junctions
junctions
Prior art date
Application number
BE157413A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE830336A publication Critical patent/BE830336A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
BE157413A 1974-06-21 1975-06-17 Circuit integre bipolaire a jonctions d'isolement et procede de fabrication BE830336A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US481747A US3916431A (en) 1974-06-21 1974-06-21 Bipolar integrated circuit transistor with lightly doped subcollector core

Publications (1)

Publication Number Publication Date
BE830336A true BE830336A (fr) 1975-10-16

Family

ID=23913224

Family Applications (1)

Application Number Title Priority Date Filing Date
BE157413A BE830336A (fr) 1974-06-21 1975-06-17 Circuit integre bipolaire a jonctions d'isolement et procede de fabrication

Country Status (10)

Country Link
US (1) US3916431A (ja)
JP (1) JPS5113585A (ja)
BE (1) BE830336A (ja)
CA (1) CA1018676A (ja)
DE (1) DE2527076B2 (ja)
FR (1) FR2275883A1 (ja)
GB (1) GB1476555A (ja)
IT (1) IT1038765B (ja)
NL (1) NL7507394A (ja)
SE (1) SE406990B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128777A (en) * 1974-09-04 1976-03-11 Hitachi Ltd Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector
US5311054A (en) * 1991-03-25 1994-05-10 Harris Corporation Graded collector for inductive loads
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
US3510736A (en) * 1967-11-17 1970-05-05 Rca Corp Integrated circuit planar transistor
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
US3590345A (en) * 1969-06-25 1971-06-29 Westinghouse Electric Corp Double wall pn junction isolation for monolithic integrated circuit components

Also Published As

Publication number Publication date
DE2527076B2 (de) 1979-08-30
SE406990B (sv) 1979-03-05
JPS5113585A (ja) 1976-02-03
GB1476555A (en) 1977-06-16
IT1038765B (it) 1979-11-30
US3916431A (en) 1975-10-28
SE7506734L (sv) 1975-12-22
DE2527076A1 (de) 1976-01-08
NL7507394A (nl) 1975-12-23
CA1018676A (en) 1977-10-04
AU8215675A (en) 1976-12-23
FR2275883A1 (fr) 1976-01-16

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