IT1038765B - Dispositivo a circuito inte grato - Google Patents

Dispositivo a circuito inte grato

Info

Publication number
IT1038765B
IT1038765B IT24113/75A IT2411375A IT1038765B IT 1038765 B IT1038765 B IT 1038765B IT 24113/75 A IT24113/75 A IT 24113/75A IT 2411375 A IT2411375 A IT 2411375A IT 1038765 B IT1038765 B IT 1038765B
Authority
IT
Italy
Prior art keywords
circuit device
inte
inte grate
grate circuit
grate
Prior art date
Application number
IT24113/75A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1038765B publication Critical patent/IT1038765B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/007Autodoping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
IT24113/75A 1974-06-21 1975-06-06 Dispositivo a circuito inte grato IT1038765B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US481747A US3916431A (en) 1974-06-21 1974-06-21 Bipolar integrated circuit transistor with lightly doped subcollector core

Publications (1)

Publication Number Publication Date
IT1038765B true IT1038765B (it) 1979-11-30

Family

ID=23913224

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24113/75A IT1038765B (it) 1974-06-21 1975-06-06 Dispositivo a circuito inte grato

Country Status (10)

Country Link
US (1) US3916431A (it)
JP (1) JPS5113585A (it)
BE (1) BE830336A (it)
CA (1) CA1018676A (it)
DE (1) DE2527076B2 (it)
FR (1) FR2275883A1 (it)
GB (1) GB1476555A (it)
IT (1) IT1038765B (it)
NL (1) NL7507394A (it)
SE (1) SE406990B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128777A (en) * 1974-09-04 1976-03-11 Hitachi Ltd Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector
US5311054A (en) * 1991-03-25 1994-05-10 Harris Corporation Graded collector for inductive loads
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
US3510736A (en) * 1967-11-17 1970-05-05 Rca Corp Integrated circuit planar transistor
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
US3590345A (en) * 1969-06-25 1971-06-29 Westinghouse Electric Corp Double wall pn junction isolation for monolithic integrated circuit components

Also Published As

Publication number Publication date
CA1018676A (en) 1977-10-04
GB1476555A (en) 1977-06-16
NL7507394A (nl) 1975-12-23
AU8215675A (en) 1976-12-23
BE830336A (fr) 1975-10-16
SE7506734L (sv) 1975-12-22
JPS5113585A (it) 1976-02-03
DE2527076A1 (de) 1976-01-08
US3916431A (en) 1975-10-28
SE406990B (sv) 1979-03-05
DE2527076B2 (de) 1979-08-30
FR2275883A1 (fr) 1976-01-16

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