BE830336A - Circuit integre bipolaire a jonctions d'isolement et procede de fabrication - Google Patents
Circuit integre bipolaire a jonctions d'isolement et procede de fabricationInfo
- Publication number
- BE830336A BE830336A BE157413A BE157413A BE830336A BE 830336 A BE830336 A BE 830336A BE 157413 A BE157413 A BE 157413A BE 157413 A BE157413 A BE 157413A BE 830336 A BE830336 A BE 830336A
- Authority
- BE
- Belgium
- Prior art keywords
- integrated circuit
- manufacturing process
- bipolar integrated
- isolation junctions
- junctions
- Prior art date
Links
- 238000002955 isolation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US481747A US3916431A (en) | 1974-06-21 | 1974-06-21 | Bipolar integrated circuit transistor with lightly doped subcollector core |
Publications (1)
Publication Number | Publication Date |
---|---|
BE830336A true BE830336A (fr) | 1975-10-16 |
Family
ID=23913224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE157413A BE830336A (fr) | 1974-06-21 | 1975-06-17 | Circuit integre bipolaire a jonctions d'isolement et procede de fabrication |
Country Status (10)
Country | Link |
---|---|
US (1) | US3916431A (xx) |
JP (1) | JPS5113585A (xx) |
BE (1) | BE830336A (xx) |
CA (1) | CA1018676A (xx) |
DE (1) | DE2527076B2 (xx) |
FR (1) | FR2275883A1 (xx) |
GB (1) | GB1476555A (xx) |
IT (1) | IT1038765B (xx) |
NL (1) | NL7507394A (xx) |
SE (1) | SE406990B (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5128777A (en) * | 1974-09-04 | 1976-03-11 | Hitachi Ltd | Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho |
US3976512A (en) * | 1975-09-22 | 1976-08-24 | Signetics Corporation | Method for reducing the defect density of an integrated circuit utilizing ion implantation |
US4079408A (en) * | 1975-12-31 | 1978-03-14 | International Business Machines Corporation | Semiconductor structure with annular collector/subcollector region |
US4388634A (en) * | 1980-12-04 | 1983-06-14 | Rca Corporation | Transistor with improved second breakdown capability |
US4571275A (en) * | 1983-12-19 | 1986-02-18 | International Business Machines Corporation | Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector |
US5311054A (en) * | 1991-03-25 | 1994-05-10 | Harris Corporation | Graded collector for inductive loads |
JP2006186225A (ja) * | 2004-12-28 | 2006-07-13 | Nec Electronics Corp | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3482111A (en) * | 1966-03-04 | 1969-12-02 | Ncr Co | High speed logical circuit |
US3510736A (en) * | 1967-11-17 | 1970-05-05 | Rca Corp | Integrated circuit planar transistor |
NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
US3590345A (en) * | 1969-06-25 | 1971-06-29 | Westinghouse Electric Corp | Double wall pn junction isolation for monolithic integrated circuit components |
-
1974
- 1974-06-21 US US481747A patent/US3916431A/en not_active Expired - Lifetime
-
1975
- 1975-05-20 GB GB2148775A patent/GB1476555A/en not_active Expired
- 1975-06-06 IT IT24113/75A patent/IT1038765B/it active
- 1975-06-09 CA CA228,856A patent/CA1018676A/en not_active Expired
- 1975-06-12 SE SE7506734A patent/SE406990B/xx unknown
- 1975-06-17 JP JP50074258A patent/JPS5113585A/ja active Pending
- 1975-06-17 BE BE157413A patent/BE830336A/xx unknown
- 1975-06-18 DE DE2527076A patent/DE2527076B2/de not_active Withdrawn
- 1975-06-18 FR FR7519093A patent/FR2275883A1/fr not_active Withdrawn
- 1975-06-20 NL NL7507394A patent/NL7507394A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
AU8215675A (en) | 1976-12-23 |
NL7507394A (nl) | 1975-12-23 |
GB1476555A (en) | 1977-06-16 |
JPS5113585A (xx) | 1976-02-03 |
IT1038765B (it) | 1979-11-30 |
DE2527076A1 (de) | 1976-01-08 |
SE7506734L (sv) | 1975-12-22 |
US3916431A (en) | 1975-10-28 |
CA1018676A (en) | 1977-10-04 |
DE2527076B2 (de) | 1979-08-30 |
FR2275883A1 (fr) | 1976-01-16 |
SE406990B (sv) | 1979-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2280979A1 (fr) | Structure de semi-conducteur et procede de fabrication | |
BE857125A (fr) | Boitier de circuit integre et son procede de fabrication | |
FR2279991A1 (fr) | Rubans de jonction en polyester et leur procede de fabrication | |
BE833858A (fr) | Procede de fabrication de circuit imprime et circuit obtenu | |
BE842511A (fr) | Dispositif semi-conducteur et son procede de fabrication | |
FR2309036A1 (fr) | Dispositif semiconducteur et son procede de fabrication | |
FR2346226A1 (fr) | Bouteille depolie en polyester insature et son procede de fabrication | |
FR2330149A1 (fr) | Photodiode a semi-conducteur et procede de fabrication | |
FR2315972A1 (fr) | Procede de fabrication d'une composition anti-mousse stable et emulsionnee | |
FR2301092A1 (fr) | Procede de fabrication d'un semi-conducteur et semi-conducteur obtenu | |
BE845154A (fr) | Procede de fabrication d'un memoire a semiconducteur | |
BE828188A (fr) | Procede de fabrication d'un dispositif semi-conducteur | |
BE877350A (fr) | Plaquette a circuit et son procede de fabrication | |
BE853047A (fr) | Accouplement elastique et son procede de fabrication | |
FR2316730A1 (fr) | Circuit logique integre et son procede de fabrication | |
FR2310230A1 (fr) | Bandage moule et son procede de fabrication | |
FR2302603A1 (fr) | Procede de fabrication d'un reflect | |
FR2319978A1 (fr) | Circuits integres semi-conducteurs et procede de preparation | |
FR2326779A1 (fr) | Procede de fabrication de circuits integres | |
FR2310853A1 (fr) | Tuyau souple a emboitement et son procede de fabrication | |
FR2334205A1 (fr) | Dispositif semi-conducteur et son procede de fabrication | |
BE830336A (fr) | Circuit integre bipolaire a jonctions d'isolement et procede de fabrication | |
BE872909A (fr) | Procede et agencement de fabrication d'enveloppes | |
FR2321190A1 (fr) | Composant semi-conducteur et son procede de fabrication | |
BE836866A (fr) | Procede de fabrication de circuits imprimes et circuits imprimes fabriques suivant ce procede |