BE828444A - Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur - Google Patents
Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteurInfo
- Publication number
- BE828444A BE828444A BE155826A BE155826A BE828444A BE 828444 A BE828444 A BE 828444A BE 155826 A BE155826 A BE 155826A BE 155826 A BE155826 A BE 155826A BE 828444 A BE828444 A BE 828444A
- Authority
- BE
- Belgium
- Prior art keywords
- nitride
- oxide
- memory circuit
- semiconductor elements
- containing metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742420370 DE2420370A1 (de) | 1974-04-26 | 1974-04-26 | Speicherschaltung mit mnos-elementen |
Publications (1)
Publication Number | Publication Date |
---|---|
BE828444A true BE828444A (fr) | 1975-08-18 |
Family
ID=5914101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE155826A BE828444A (fr) | 1974-04-26 | 1975-04-25 | Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS50155180A (de) |
BE (1) | BE828444A (de) |
DE (1) | DE2420370A1 (de) |
FR (1) | FR2269175A1 (de) |
IT (1) | IT1037412B (de) |
NL (1) | NL7504970A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5938655B2 (ja) * | 1979-05-14 | 1984-09-18 | 日本放送協会 | 半導体デイスクメモリ装置 |
GB2072417B (en) * | 1980-03-19 | 1983-12-14 | Plessey Co Ltd | Semiconductor memory element |
-
1974
- 1974-04-26 DE DE19742420370 patent/DE2420370A1/de active Pending
-
1975
- 1975-04-18 IT IT2247875A patent/IT1037412B/it active
- 1975-04-24 JP JP50050178A patent/JPS50155180A/ja active Pending
- 1975-04-24 FR FR7512802A patent/FR2269175A1/fr not_active Withdrawn
- 1975-04-25 BE BE155826A patent/BE828444A/xx unknown
- 1975-04-25 NL NL7504970A patent/NL7504970A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7504970A (nl) | 1975-10-28 |
DE2420370A1 (de) | 1975-11-06 |
JPS50155180A (de) | 1975-12-15 |
IT1037412B (it) | 1979-11-10 |
FR2269175A1 (en) | 1975-11-21 |
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