BE833886A - Element de memoire statique - Google Patents

Element de memoire statique

Info

Publication number
BE833886A
BE833886A BE160430A BE160430A BE833886A BE 833886 A BE833886 A BE 833886A BE 160430 A BE160430 A BE 160430A BE 160430 A BE160430 A BE 160430A BE 833886 A BE833886 A BE 833886A
Authority
BE
Belgium
Prior art keywords
memory element
static memory
static
memory
Prior art date
Application number
BE160430A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE833886A publication Critical patent/BE833886A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
BE160430A 1974-09-26 1975-09-26 Element de memoire statique BE833886A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2446028A DE2446028C2 (de) 1974-09-26 1974-09-26 Statisches Speicherelement

Publications (1)

Publication Number Publication Date
BE833886A true BE833886A (fr) 1976-01-16

Family

ID=5926819

Family Applications (1)

Application Number Title Priority Date Filing Date
BE160430A BE833886A (fr) 1974-09-26 1975-09-26 Element de memoire statique

Country Status (8)

Country Link
US (1) US3997881A (fr)
JP (1) JPS5410414B2 (fr)
BE (1) BE833886A (fr)
DE (1) DE2446028C2 (fr)
FR (1) FR2286470A1 (fr)
GB (1) GB1526419A (fr)
IT (1) IT1042861B (fr)
NL (1) NL7509853A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221734A (en) * 1975-08-12 1977-02-18 Matsushita Electric Ind Co Ltd Information storing method and its device
JPS5312239A (en) * 1976-07-20 1978-02-03 Matsushita Electric Ind Co Ltd Driving system for memory unit
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
FR2562705B1 (fr) * 1984-04-06 1986-06-27 Thomson Csf Mat Tel Cellule elementaire de memoire vive, et memoire vive realisee par association de telles cellules elementaires
US4620297A (en) * 1984-08-31 1986-10-28 Texas Instruments Incorporated Schmitt trigger based memory cell with assisted turn on
US4707808A (en) * 1985-04-26 1987-11-17 Rockwell International Corporation Small size, high speed GaAs data latch
JPH0668675A (ja) * 1992-08-21 1994-03-11 Takayama:Kk メモリデバイス
US5434816A (en) * 1994-06-23 1995-07-18 The United States Of America As Represented By The Secretary Of The Air Force Two-transistor dynamic random-access memory cell having a common read/write terminal
US5793668A (en) * 1997-06-06 1998-08-11 Timeplex, Inc. Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device
CN108806742B (zh) * 2017-05-04 2022-01-04 汤朝景 随机存取存储器并且具有与其相关的电路、方法以及设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell

Also Published As

Publication number Publication date
DE2446028A1 (de) 1976-05-20
JPS5410414B2 (fr) 1979-05-07
IT1042861B (it) 1980-01-30
FR2286470B1 (fr) 1980-04-30
US3997881A (en) 1976-12-14
NL7509853A (nl) 1976-03-30
DE2446028C2 (de) 1984-02-16
GB1526419A (en) 1978-09-27
JPS5160423A (fr) 1976-05-26
FR2286470A1 (fr) 1976-04-23

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