FR2291609A1 - Circuit logique statique - Google Patents

Circuit logique statique

Info

Publication number
FR2291609A1
FR2291609A1 FR7534671A FR7534671A FR2291609A1 FR 2291609 A1 FR2291609 A1 FR 2291609A1 FR 7534671 A FR7534671 A FR 7534671A FR 7534671 A FR7534671 A FR 7534671A FR 2291609 A1 FR2291609 A1 FR 2291609A1
Authority
FR
France
Prior art keywords
logic circuit
static logic
static
circuit
logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7534671A
Other languages
English (en)
Other versions
FR2291609B1 (fr
Inventor
David Adler
Kurt E Petersen
Melvin P Shaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2291609A1 publication Critical patent/FR2291609A1/fr
Application granted granted Critical
Publication of FR2291609B1 publication Critical patent/FR2291609B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
FR7534671A 1974-11-14 1975-11-13 Circuit logique statique Granted FR2291609A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52374174A 1974-11-14 1974-11-14

Publications (2)

Publication Number Publication Date
FR2291609A1 true FR2291609A1 (fr) 1976-06-11
FR2291609B1 FR2291609B1 (fr) 1980-01-11

Family

ID=24086276

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7534671A Granted FR2291609A1 (fr) 1974-11-14 1975-11-13 Circuit logique statique

Country Status (4)

Country Link
JP (1) JPS5938672B2 (fr)
DE (1) DE2551035C3 (fr)
FR (1) FR2291609A1 (fr)
GB (1) GB1522327A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985003599A1 (fr) * 1984-02-09 1985-08-15 Ncr Corporation Cellule de memoire morte programmable et son procede de fabrication
EP2500945A1 (fr) * 2011-03-15 2012-09-19 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Cellule mémoire

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8400958D0 (en) * 1984-01-13 1984-02-15 British Petroleum Co Plc Threshold switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985003599A1 (fr) * 1984-02-09 1985-08-15 Ncr Corporation Cellule de memoire morte programmable et son procede de fabrication
EP2500945A1 (fr) * 2011-03-15 2012-09-19 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Cellule mémoire
FR2972849A1 (fr) * 2011-03-15 2012-09-21 Commissariat Energie Atomique Cellule memoire
US8861254B2 (en) 2011-03-15 2014-10-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Memory cell

Also Published As

Publication number Publication date
DE2551035A1 (de) 1976-05-26
DE2551035B2 (de) 1980-09-18
JPS5938672B2 (ja) 1984-09-18
DE2551035C3 (de) 1981-08-27
JPS5173373A (fr) 1976-06-25
FR2291609B1 (fr) 1980-01-11
GB1522327A (en) 1978-08-23

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Legal Events

Date Code Title Description
ST Notification of lapse