BE828444A - Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur - Google Patents

Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur

Info

Publication number
BE828444A
BE828444A BE155826A BE155826A BE828444A BE 828444 A BE828444 A BE 828444A BE 155826 A BE155826 A BE 155826A BE 155826 A BE155826 A BE 155826A BE 828444 A BE828444 A BE 828444A
Authority
BE
Belgium
Prior art keywords
nitride
oxide
memory circuit
semiconductor elements
containing metal
Prior art date
Application number
BE155826A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE828444A publication Critical patent/BE828444A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
BE155826A 1974-04-26 1975-04-25 Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur BE828444A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742420370 DE2420370A1 (de) 1974-04-26 1974-04-26 Speicherschaltung mit mnos-elementen

Publications (1)

Publication Number Publication Date
BE828444A true BE828444A (fr) 1975-08-18

Family

ID=5914101

Family Applications (1)

Application Number Title Priority Date Filing Date
BE155826A BE828444A (fr) 1974-04-26 1975-04-25 Circuit de memoire comportant des elements metal-nitrure-oxyde-semiconducteur

Country Status (6)

Country Link
JP (1) JPS50155180A (xx)
BE (1) BE828444A (xx)
DE (1) DE2420370A1 (xx)
FR (1) FR2269175A1 (xx)
IT (1) IT1037412B (xx)
NL (1) NL7504970A (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938655B2 (ja) * 1979-05-14 1984-09-18 日本放送協会 半導体デイスクメモリ装置
GB2072417B (en) * 1980-03-19 1983-12-14 Plessey Co Ltd Semiconductor memory element

Also Published As

Publication number Publication date
NL7504970A (nl) 1975-10-28
DE2420370A1 (de) 1975-11-06
JPS50155180A (xx) 1975-12-15
IT1037412B (it) 1979-11-10
FR2269175A1 (en) 1975-11-21

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