BE817707A - Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n. - Google Patents

Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n.

Info

Publication number
BE817707A
BE817707A BE146604A BE146604A BE817707A BE 817707 A BE817707 A BE 817707A BE 146604 A BE146604 A BE 146604A BE 146604 A BE146604 A BE 146604A BE 817707 A BE817707 A BE 817707A
Authority
BE
Belgium
Prior art keywords
conductivity
manufacturing process
silicon single
single crystals
doping silicon
Prior art date
Application number
BE146604A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE817707A publication Critical patent/BE817707A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE146604A 1973-11-12 1974-07-16 Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n. BE817707A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2356376A DE2356376A1 (de) 1973-11-12 1973-11-12 Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung

Publications (1)

Publication Number Publication Date
BE817707A true BE817707A (fr) 1974-11-18

Family

ID=5897844

Family Applications (1)

Application Number Title Priority Date Filing Date
BE146604A BE817707A (fr) 1973-11-12 1974-07-16 Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n.

Country Status (5)

Country Link
US (1) US4042454A (enExample)
JP (1) JPS5081262A (enExample)
BE (1) BE817707A (enExample)
CA (1) CA1045523A (enExample)
DE (1) DE2356376A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109865A (en) * 1976-03-12 1977-09-14 Nippon Telegr & Teleph Corp <Ntt> Inpurity adding method to silicon
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4857259A (en) * 1986-05-16 1989-08-15 Westinghouse Electric Corp. Neutron dosimeter
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
DE3942387A1 (de) * 1989-12-21 1991-06-27 Florian Fischer Transportsystem, insbesondere zum transportieren von siliziumeinkristallen durch das becken eines forschungsreaktors
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
AU5966600A (en) * 1999-07-19 2001-02-05 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation
RU2202655C1 (ru) * 2002-04-23 2003-04-20 Московский государственный институт стали и сплавов (технологический университет) Способ получения резистентного кремния
JP2007176725A (ja) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
NL258192A (enExample) * 1959-12-15
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
US3255050A (en) * 1962-03-23 1966-06-07 Carl N Klahr Fabrication of semiconductor devices by transmutation doping
US3366462A (en) * 1964-11-04 1968-01-30 Siemens Ag Method of producing monocrystalline semiconductor material
DE1519888B2 (de) * 1966-04-15 1970-04-16 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum tiegelfreien Zonenschmelzen
US3734695A (en) * 1970-08-13 1973-05-22 Monsanto Co Process for making monocrystalline silicon

Also Published As

Publication number Publication date
CA1045523A (en) 1979-01-02
US4042454A (en) 1977-08-16
JPS5081262A (enExample) 1975-07-01
DE2356376A1 (de) 1975-05-15

Similar Documents

Publication Publication Date Title
BE811380A (fr) Procede de fabrication de structures en relief
BE822852A (fr) Dispositifs semi-conducteurs stabilises en procede de fabrication
FR2285489A1 (fr) Procede de fabrication de pates de cellulose avec des rendements eleves
BE822423A (fr) Machine de fabrication de verrerie
BE815392R (fr) Procede de fabrication de structures en relief
BE766395A (fr) Procede de fabrication du 1,1-difluorethane,
BE817707A (fr) Procede de fabrication de monocristaux de silicium a dopage homogene avec une conductivite n.
BE790694A (fr) Procede de fabrication de nitroparaffines
BE815803A (fr) Procede de fabrication de 2.6-dimethyl-naphtalenes
BE782171A (fr) Procede de fabrication de corps en matiere semiconductrice, avec une longueur quelconque
BE800878A (fr) Procede de fabrication du polysaccharide
CH551380A (fr) Nouveau procede de fabrication d&#39;hydrazine.
BE819681R (fr) Procede de fabrication de bas
FR2331378A1 (fr) Procede pour fabriquer des monocristaux de silicium dopes au phosphore avec un appauvrissement ou un enrichissement marginal en substance dopante, desire suivant une direction radiale.
BE812401A (fr) Procede de fabrication de verres
BE846378A (fr) Procede de fabrication de silicium a dopage
CH551383A (fr) Procede de fabrication d&#39;imines.
BE784033A (fr) Procede de fabrication de monocristaux du type aiiibv exempts de dislocations
CH548374A (fr) Procede de fabrication de cyclo-alcanonoximes.
BE812681A (fr) Procede de fabrication de butynediol
BE816719A (fr) Procede de fabrication de monocristaux de silicium de conductivite de type p a dopage homogene
CH550751A (fr) Procede de fabrication de composes insatures.
BE816029A (fr) Procede de fabrication d&#39;alpha-6-desoxy-5-oxytetracycline
BE816442A (fr) Procede de fabrication de carbone actif
BE780497A (fr) Procede de fabrication de granulats epandables